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www.DataSheet4U.com
®
QUAD LOW CAPACITANCE TRANSIL™
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
■
Printers
■
Communication systems and cellular phones
■
Video equipment
■
This device is particularly adapted to the protection
of symmetrical signals.
FEATURES
4 UNIDIRECTIONAL TRANSIL™ FUNCTIONS.
■
BREAKDOWN VOLTAGE VBR= 6.1V MIN.
■
LOW DIODE CAPACITANCE (12pF @ 0V)
■
LOW LEAKAGE CURRENT < 100 nA
■
VERY SMALL PCB AREA < 2.6 mm
■
2
ESDALC6V1P5
ARRAY FOR ESD PROTECTION
SOT665
(Jedec SC89-5L)
FUNCTIONAL DIAGRAM
DESCRIPTION
The ESDALC6V1P5 is a monolithic array designed
to protect up to 4 lines against ESD transients.
This device is ideal for applications where both
reduced line capacitance and board space saving
are required.
BENEFITS
■
High ESD protection level.
■
High integration.
■
Suitable for high density boards.
COMPLIES WITH THE FOLLOWING STANDARDS :
■
IEC61000-4-2 level 4: 15 kV (air discharge)
8 kV (contact discharge)
■
MIL STD 883E-Method 3015-7: class 3
25kV HBM (Human Body Model)
1
5
2
3
ESD response to IEC61000-4-2 level 4 (15kV
contact)
4
February 2004 - Ed: 1
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Page 2
ESDALC6V1P5
ABSOLUTE RATINGS (T
amb
= 25°C)
Symbol Parameter Test conditions Value Unit
V
PP
P
PP
T
j
T
stg
T
L
T
op
Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit.
ESD discharge - IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
Peak pulse power (8/20 µs) (see note 1) Tjinitial = Tamb
Junction temperature
Storage temperature range
Maximum lead temperature for soldering during 10s at N/A
Operating temperature range
±15
±8
30 W
125 °C
-55to+150 °C
260 °C
-40to+125 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient on printed circuit on recommended pad layout
ELECTRICAL CHARACTERISTICS (T
amb
= 25°C)
220 °C/W
kV
Symbol Parameter
V
V
V
I
RM
I
αT
V
R
RM
BR
CL
PP
F
C
d
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
Peak pulse current
Voltage tempature coefficient
Forward voltage drop
Capacitance per line
Dynamic resistance
V
BR
min. max. max. typ. max. typ.
Types
VVmAµAVΩ 10
@IRI
V
CLVBRVRM
Slope: 1/R
@V
RM
RM
I
I
F
V
F
I
RM
d
I
PP
Rd αTC
@0V
-4
/°C pF
V
ESDALC6V1P5
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6.1 7.2 1 0.1 3 1.5 4.5 12
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ESDALC6V1P5
Fig. 1: Relative variation of peak pulse power
versus initial junction temperature.
P [T initial] / P [T initial=25°C)
PP j PP j
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150
T (°C)
j
Fig. 3: Clamping voltage versus peak pulse
current (typical values, rectangular waveform).
I (A)
PP
100.0
10.0
t =2.5µs
p
T initial=25°C
j
Fig. 2: Peak pulse power versus exponential pulse
duration.
P(W)
PP
1000
100
T (µs)
10
1 10 100
p
T initial=25°C
j
Fig. 4: Forward voltage drop versus peak forward
current (typical values).
I (A)
FM
1.E+00
T =125°C
j
1.E-01
T =25°C
j
1.0
V (V)
0.1
0 10203040506070
CL
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0123456
V (V)
R
F=1MHz
V =30mV
OSC RMS
T =25°C
j
1.E-02
V (V)
1.E-03
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FM
Fig. 6: Relative variation of leakage current versus
junction temperature (typical values).
I [T ] / I [T =25°C]
Rj Rj
1000
100
V =3V
R
10
T (°C)
1
25 50 75 100 125
j
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Page 4
ESDALC6V1P5
ORDER CODE
ESDA LC 6V1 P5
ESD ARRAY
Vmin
BR
LOW CAPACITANCE
Ordering type Marking Package Weight Base qty Delivery mode
ESDALC6V1P5 A1 SOT665 2.9 mg. 3000 Tape & reel
PACKAGE: SOT665
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Page 5
PACKAGE MECHANICAL DATA
SOT-665
ESDALC6V1P5
DIMENSIONS
bp
D
A
e1
e
FOOT PRINT (in millimeters)
0.5
1.16
REF.
Millimeters Inches
Min. Max. Min. Max.
A 0.50 0.60 0.020 0.024
E
bp 0.17 0.27 0.007 0.011
c 0.08 0.18 0.003 0.007
Lp
He
U
D 1.50 1.70 0.060 0.067
E 1.10 1.30 0.043 0.051
e 1.00 0.040
e1 0.50 0.020
He 1.50 1.70 0.059 0.067
Lp 0.10 0.30 0.004 0.012
2.75
0.43
0.3
REEL ORIENTATION
A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1 A1
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All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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