Page 1
®
ESDA6V1-5P6
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
■
Printers
■
Communication systems and cellular phones
■
Video equipment
■
Thisdeviceisparticularlyadpatedto the protection
of symmetrical signals.
FEATURES
5UNIDIRECTIONAL TRANSIL™ FUNCTIONS.
■
■ BREAKDOWN VOLTAGE V
■ LOW LEAKAGE CURRENT < 500 nA
VERY SMALL PCB AREA < 2.6 mm
■
DESCRIPTION
The ESDA6V1-5P6 is a monolithic array designed
to protect up to 5 lines against ESD transients.
This device is ideal for applications where board
space saving is required.
= 6.1V MIN
BR
2
TRANSIL™ ARRAY
FOR ESD PROTECTION
SOT-666
FUNCTIONAL DIAGRAM
I/O1
I/O5
BENEFITS
■
High ESD protection level.
■
High integration.
■
Suitable for high density boards.
COMPLIESWITH THE FOLLOWING STANDARDS :
■
IEC61000-4-2 level 4: 15 kV (air discharge)
8kV (contact discharge)
■
MIL STD 883E-Method 3015-7: class 3
25kV HBM (Human Body Model)
March 2003 - Ed: 2A
GND
I/O2
I/O4
I/O3
1/5
Page 2
ESDA6V1-5P6
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25°C)
Symbol Parameter Test conditions Value Unit
V
PP
P
PP
T
j
T
stg
T
L
T
op
Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit.
ESD discharge - IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
Peak pulse power (8/20 µs) (see note 1) Tjinitial = Tamb
Junction temperature
Storage temperature range
Maximum lead temperature for soldering during 10sat 5mm for case
Operating temperature range
±15
±8
150 W
125 °C
-55to+150 °C
260 °C
-40to+150 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-a)
ELECTRICAL CHARACTERISTICS (T
Junction to ambient on printed circuit on recommended pad layout
= 25°C)
amb
220 °C/W
kV
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
αT
V
F
C
R
d
Types V
ESDA6V1-5P6
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
Peak pulse current
Voltage tempature coefficient
Forward voltage drop
Capacitance per line
Dynamic resistance
BR
min. max. max. typ. max. typ.
VVmAµAV
6.1 7.2 1 0.5 3 1.5 4.5 70
@I
R
V
CLVBRVRM
Slope: 1/R
IRM@V
RM
I
I
F
V
F
I
RM
d
I
PP
Rd αTC
@0V
Ω10
-4
/°C pF
V
2/5
Page 3
ESDA6V1-5P6
Fig. 1: Relative variation of peak pulse power
versus initial junction temperature.
P [T initial] / P [T initial=25°C)
PP j PP j
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150
T (°C)
j
Fig. 3: Clamping voltage versus peak pulse
current (typical values, rectangular waveform).
I (A)
PP
100.0
t =2.5µs
p
T initial=25°C
j
Fig. 2: Peak pulse power versusexponential pulse
duration.
P (W)
PP
1000
100
T (µs)
10
1 10 100
p
T initial=25°C
j
Fig. 4: Forward voltage drop versus peak forward
current (typical values).
I (A)
FM
1.E+00
10.0
1.0
V (V)
0.1
0 10203040506070
CL
Fig. 5: Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
80
70
60
50
40
30
20
10
0
0123456
V (V)
R
F=1MHz
V =30mV
OSC RMS
T=25°C
j
T=125°C
1.E-01
1.E-02
1.E-03
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
j
T=25°C
j
V (V)
FM
Fig. 6: Relative variation of leakage current versus
junction temperature (typical values).
I [T ] / I [T =25°C]
Rj Rj
2.0
V =3V
R
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25 50 75 100 125
T (°C)
j
3/5
Page 4
ESDA6V1-5P6
Fig. 7: ESD response @ VPP=8kV contact.
IEC61000-4-2:V =8kV Contact
PP
ORDER CODE
ESDA 6V1 5 P6
ESD ARRAY
V min
BR
Fig. 8: ESD response @ VPP=15kV contact.
IEC61000-4-2:V =15kV Contact
PACKAGE:SOT-666
PP
5 lines
Ordering type Marking Package Weight Base qty Delivery mode
ESDA6V1-5P6 C SOT-666 2.9 mg. 3000 Tape & reel
4/5
Page 5
PACKAGE MECHANICAL DATA
SOT-666
ESDA6V1-5P6
DIMENSIONS
bp
D
A
FOOT PRINT (in millimeters)
0.36
REF.
Millimeters Inches
Min. Max. Min. Max.
A 0.50 0.60 0.020 0.024
bp 0.17 0.27 0.007 0.011
e1
e
E
c 0.08 0.18 0.003 0.007
D 1.50 1.70 0.060 0.067
E 1.10 1.30 0.043 0.051
e 1.00 0.040
e1 0.50 0.020
Lp
He
U
He 1.50 1.70 0.059 0.067
Lp 0.10 0.30 0.004 0.012
0.30
0.84
0.20 0.20
Informationfurnished is believed to be accurateandreliable. However, STMicroelectronics assumes noresponsibilityfor the consequences of
useof such information nor forany infringement of patents orotherrights of third parties whichmay result from its use.No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
0.62
2.30
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
5/5
Loading...