Datasheet ESDA25W Datasheet (SGS Thomson Microelectronics)

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®
ESDA25W
Application Specific Discretes
A.S.D.
MAIN APPLICATIONS
Where transient overvoltage protection in ESD sensitive equipment is required, such as :
Computers
n
Printers
n
Communication systems
n
Cellular phones handsets and accessories
n
Other telephone sets
n
Set top boxes
n
FEATURES
2 unidirectional TRANSILfunctions.
n
Breakdown voltage : VBR= 25V min.
n
n
Low leakage current:<1µA.
n
VerylowPCBspaceconsuming : 4.2mm2typically.
DESCRIPTION
QUAL TRANSILARRAY
FOR ESD PROTECTION
SOT323-3L
FUNCTIONAL DIAGRAM
The ESDA25W is a 2-bit wide monolithic suppressor designed to protect components which are connected to data and transmission lines against ESD.
It clamps the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transients.
BENEFITS
n
High ESD protection level : up to 25 kV.
n
High integration.
n
Suitable for high density boards.
COMPLIESWITH THE FOLLOWINGSTANDARDS :
n
IEC61000-4-2 level 4
n
MIL STD 883C-Method 3015-6 : class 3. (human body model)
1
3
2
March 2000 - Ed: 1A
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ESDA25W
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Test conditions Value Unit
amb
= 25°C)
V
PP
P
PP
T
op
T
j
T
stg
T
L
Note 1: The evolution of the operating parameters versus temperature is given trough curves and αT parameter
ELECTRICAL CHARACTERISTICS (T
ESD discharge MIL STD 883C - Method 3015-6
IEC61000-4-2, air discharge
IEC61000-4-2, contact discharge Peak pulse power (8/20 µs) Operating temperature range Note 1 Junction temperature Storage temperature range
Lead solder temperature (10 secondes duration)
= 25°C)
amb
25 16
9
400 W
-40to+85 °C 150 °C
-55to+150 °C 260 °C
Symbol Parameter
V V
V
I
I
αT
RM
BR
CL
RM
PP
Stand-off voltage Breakdown voltage
Clamping voltage
Leakage current Peak pulse current Voltage temperature coefficient
V
V
CL
V
RM
BR
I
I
RM
I
R
kV
V
C
Rd
V
F
Types VBR@
ESDA25W
note 2 : Square pulse Ipp = 15A, tp=2.5µs. note 3 : VBR= αT* (T
Capacitance per line Dynamic resistance Forward voltage drop
min. max. max. typ. max. typ. max.
VVmAµAV
25 30 1 1 24 1.1 10 65 1.2 10
-25°C) * VBR(25°C)
amb
slope : 1 / R
I
R
IRM@V
RM
Rd αTC V
note 2 note 3 0V bias
d
10-4/°C pF V mA
I
PP
@I
F
F
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ESDA25W
Fig. 1: Peak pulse power dissipation versus initial
junction temperature
Ppp[Tj initial]/Ppp [Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0 0 25 50 75 100 125 150
Tj initial (°C)
Fig. 3: Clamping voltage versus peak pulse
current (Tj initial = 25 °C). Rectangular waveform tp = 2.5 µs.
Ipp(A)
100.0
tp = 2.5 sµ
Fig. 2: Peak pulse power versus exponential pulse duration (Tj initial = 25 °C)
Ppp(W)
10000
1000
tp(µs)
100
1 10 100
Fig. 4: Capacitance versus reverse applied voltage (typical values).
C(pF)
100
F=1MHz
Vosc=30mV
10.0
1.0
Vcl(V)
0.1 20 25 30 35 40 45 50 55 60 65 70 75 80
Fig. 5: Relative variation of leakage current versus junction temperature (typical values).
IR[Tj] / IR[Tj=25°C ]
1000
100
10
1 25 50 75 100 125 150
Tj(°C)
10
1 10 100
Fig. 6: Peak forward voltage drop versus peak forward current (typical values).
IFM(A)
1E-4
Tj = 25°C
5E-5 2E-5
1E-5 5E-6
2E-6 1E-6 5E-7
VR(V)
2E-7 1E-7
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VFM(V)
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ESDA25W
ORDER CODE
ESDA 25 W
ESD ARRAY
Vmin
BR
Package:SOT323-3L
Ordering type Marking Package Weight Base qty Delivery mode
ESDA25W E25 SOT323-3L 5.4 mg. 3000 Tape & reel
PACKAGE MECHANICAL DATA
SOT323-3L
DIMENSIONS
A
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A1
D
A 0.8 1.1 0.031 0.043
A1 0.0 0.1 0.0 0.004
b 0.25 0.4 0.010 0.016
b
c 0.1 0.26 0.004 0.010
L
H
θ
c
Mechanical specifications Lead plating Tin-lead Lead plating thickness 5µm min.
25 µm max.
Lead material Sn/ Pb
(70% to 90% Sn) Body material Molded epoxy Epoxy meets UL94,V0
4/5
D 1.8 2.0 2.2 0.071 0.079 0.086 E 1.15 1.25 1.35 0.045 0.049 0.053
E
e 0.65 0.026
H 1.8 2.1 2.4 0.071 0.083 0.094
L 0.1 0.2 0.3 0.004 0.008 0.012 θ 0 30deg.0 30de
e
g.
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ESDA25W
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