Page 1
®
Application Specific Discretes
A.S.D.™
MAIN APPLICATIONS
Where transient overvoltage protection in ESD
sensitive equipment is required, such as :
Computers
■
Printers
■
Communication systems and cellular phones
■
Video equipment
■
Thisdeviceisparticularlyadpatedto the protection
of symmetrical signals.
ESDA14V2BP6
TRANSIL™
FEATURES
4 Bidirectional Transil™ functions.
■
■ ESD Protection: IEC61000-4-2 level 4
■ Stand off voltage: 12V MIN
Low leakage current < 1µA
■
DESCRIPTION
The ESDA14V2BP6 is a monolithic array designed
to protect up to 4 lines in a bidirectional way against
ESD transients.
This device is ideal for applications where board
space saving is required.
BENEFITS
■
High ESD protection level.
■
High integration.
■
Suitable for high density boards.
COMPLIESWITH THE FOLLOWING STANDARDS :
SOT-666
FUNCTIONAL DIAGRAM
1
3
GND: 2, 5
4
6
■
IEC61000-4-2 level 4: 15 kV (air discharge)
8kV (contact discharge)
■
MIL STD 883E-Method 3015-7: class 3
25kV HBM (Human Body Model)
March 2003 - Ed: 3A
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Page 2
ESDA14V2BP6
ABSOLUTE RATINGS (T
amb
= 25°C)
Symbol Parameter Test conditions Value Unit
V
PP
P
PP
T
j
T
stg
T
L
T
op
Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit.
ESD discharge - IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
Peak pulse power dissipation(8/20 µs). Note 1 Tjinitial = Tamb
Junction temperature
Storage temperature range
Maximum lead temperature for soldering during 10sat 5mm for case
Operating temperature range
±15
±8
50 W
125 °C
-55to+150 °C
260 °C
-40to+125 °C
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient on printed circuit on recommended pad layout
220 °C/W
kV
ELECTRICAL CHARACTERISTICS (T
Symbol Parameter
V
RM
V
BR
V
CL
I
RM
I
PP
αT
V
F
Types IRM@V
ESDA14V2BP6
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage tempature coefficient
Forward voltage drop
RM
max. min. max. typ. typ. max.
µA V V V mA
112
0.1 3
= 25°C)
amb
V
CLVBRVRM
Slope: 1/R
V
BR
@I
R
d
Rd αTC
Ω 10
14.2 18 1 1.5 5.8 25
I
I
RM
I
PP
-4
/°C pF @ 0V
V
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Page 3
ESDA14V2BP6
Fig. 1: Relative variation of peak pulse power
versus initial junction temperature.
P [Tj initial] / P [Tj initial = 25°C]
PP PP
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150
Tj (°C)
Fig. 3: Clamping voltage versus peak pulse
current (typical values, rectangular waveform).
I (A)PP
10.0
Fig. 2: Peak pulse power versusexponential pulse
duration.
P (W)PP
1000
100
Tjinitial = 25°C
t (µs)P
10
1 10 100
Fig. 4: Junction capacitance versus reverse volt-
age applied (typical values).
C(pF)
30
25
V
F=1MHz
OSC
Tj=25°C
=30mV
RMS
1.0
V (V)CL
0.1
0 10203040
tP=2.5µs
initial =25°C
T
j
Fig. 5: Relative variation of leakage current versus
junction temperature (typical values).
IR[Tj] / IR[Tj = 25°C]
1000
100
10
Tj(°C)
1
25 50 75 100 125
20
15
10
5
V (V)R
0
02468101214
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Page 4
ESDA14V2BP6
ORDER CODE
ESDA 14V2 B P6
ESD ARRAY
Ordering type Marking Package Weight Base qty Delivery mode
ESDA14V2BP6 A SOT-666 2.9 mg. 3000 Tape & reel 7”
BR
V min
Bidirectional
PACKAGE: SOT-666
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Page 5
PACKAGE MECHANICAL DATA
SOT-666
ESDA14V2BP6
DIMENSIONS
bp
D
A
FOOT PRINT (in millimeters)
0.36
REF.
Millimeters Inches
Min. Max. Min. Max.
A 0.50 0.60 0.020 0.024
bp 0.17 0.27 0.007 0.011
e1
e
E
c 0.08 0.18 0.003 0.007
D 1.50 1.70 0.060 0.067
E 1.10 1.30 0.043 0.051
e 1.00 0.040
e1 0.50 0.020
Lp
He
U
He 1.50 1.70 0.059 0.067
Lp 0.10 0.30 0.004 0.012
0.30
0.84
0.20 0.20
Informationfurnished is believed to be accurateandreliable. However, STMicroelectronics assumes noresponsibilityfor the consequences of
useof such information nor forany infringement of patents orotherrights of third parties whichmay result from its use.No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
0.62
2.30
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