Datasheet ES6U41 Datasheet (ROHM)

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Page 1

2.5V Drive Nch+SBD MOSFET

ES6U41

Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET / Schottky barrier diode

Features

1) Nch MOSFET and schottky barrier diodeare put in WEMT6 package.

2) High-speed switching, Low On-resistance.

3) Low voltage drive (2.5V drive).

4) Built-in Low V

F schottky barrier diode.

Applications

Switching

Package specifications Inner circuit

Type

ES6U41

Package

Code

Basic ordering unit (pieces)

Taping

T2R

8000

Absolute maximum ratings (Ta=25C)

Parameter

Drain-source voltage Gate-source voltage

Drain current

Source current (Body diode)

Continuous Pulsed Continuous Pulsed

Channel temperature

Power dissipation W / ELEMENT0.7

∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Symbol

DSS

GSS

Limits Unit

±12

±1.5

∗1

±6.0

0.75

∗1

6.0

150

∗2

VV VV AI AI AI AI

°CTch

<Di>

Parameter

Repetitive peak reverse voltage Reverse voltage Forward current

Forward current surge peak Junction temperature Power dissipation W / ELEMENT

∗1 60Hz 1cycle ∗2 Mounted on ceramic board

Symbol

FSM

∗1

∗2

Limits Unit

25 20

0.5

2.0

150

VV VV A

°C

0.5

Parameter Symbol

Power dissipation Range of storage temperature

∗ Mounted on a ceramic board

∗

Limits Unit

0.8

−55 to +150

W / TOTALP

°CTstg

WEMT6

∗1 ESD protection diode ∗2 Body diode

(6) (5) (4)

(1) (2) (3)

Abbreviated symbol : U41

(6)

∗1

(1) (2)

(4)

(5)

∗2

(3)

(1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain

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ES6U41

Electrical characteristics

Parameter Symbol

Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage

Static drain-source on-state resistance

Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

∗Pulsed

Parameter Symbol

<Di>

Parameter Symbol

Forward voltage

Reverse current

(BR) DSS

GS (th)

DS (on)

C C

d (on)

d (off)

GSS

DSS

oss

rss

∗

iss

∗

Min.−Typ. Max.

Unit

−±10 μAVGS=±12V, VDS=0V

mΩ

Unit

ID= 0.75A V R R

V ID= 1.5A, R R

= 1mA, VGS=0V

= 1.5A, VGS= 4.5V = 1.5A, VGS= 4V = 1.5A, VGS= 2.5V

30 −−VI

−−1 μAV

0.5 − 1.5 V V

− 170 240 I

− 180 250 mΩ

− 240 340 I

1.5 −−SV

− 80 − pF V

− 1412− pF V

−

−−nC

− pF f=1MHz

− ns

1.6

2.2 nC

0.5

− nC

0.3

Min. Typ. Max.

−−1.2 V IS= 0.75A, VGS=0VForward voltage

Min. Typ. Max.

−−

Unit

0.36 V

0.52 V

100

μA

= 0.1A

= 0.5A

Conditions

= 30V, VGS=0V = 10V, ID= 1mA

= 10V, ID= 1.5A = 10V =0V

15V

= 4.5V

20Ω

= 10Ω

15V, VGS= 4.5V

10Ω

= 10Ω

Conditions

= 20V

Data Sheet

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ES6U41

Electrical characteristics curves

1.5

[A]

0.5

DRAIN CURRENT : I

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]

Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics

1000

Ta=25°C

]

Pulsed

Ω

(ON)[m

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0.01 0.1 1 10

DRAIN-CURRENT : I

Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ)

1000

VGS= 2.5V

]

Pulsed

Ω

(ON)[m

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ)

VGS= 10V

VGS= 1.7V

VGS= 1.6V

VGS= 2.5V

[A]

Ta=125°C Ta=75°C Ta=25°C Ta= -25°C

= 4.5V

= 4.0V

= 2.5V

= 2.2V

= 1.8V

Ta=25°C Pulsed

= 4.0V

= 4.5V

VGS= 10V

= 2.5V

[A]

1.5

0.5

DRAIN CURRENT : I

0246810

1000

VGS= 4.5V

Pulsed

]

Ω

(ON)[m

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0.01 0.1 1 10

VDS= 10V

Pulsed

0.1

0.01 0.1 1 10

FORWARD TRANSFER ADMITTANCE : |Yfs| [S]

= 2.2V

DRAIN-CURRENT : ID[A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ)

DRAIN-CURRENT : ID[A]

Fig.8 Forward Transfer Admittance vs. Drain Current

Ta=25°C Pulsed

VGS= 1.8V

VGS= 1.7V

VGS= 1.6V

VGS= 1.5V

Ta=125°C Ta=75°C Ta=25°C Ta= -25 °C

Ta= -25 °C Ta= 25°C Ta= 75°C Ta=125°C

VDS= 10V

Pulsed

[A]

Ta= 125°C

Ta= 75 °C Ta= 25 °C

Ta= - 25 °C

0.1

0.01

DRAIN CURRENT : I

0.001

0.5 1.0 1.5 2.0

GATE-SOURCE VOLTAGE : VGS[V]

1000

VGS= 4.0V

Pulsed

]

Ω

(ON)[m

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ)

VGS=0V

Pulsed

Ta=125°C

Ta= 75°C Ta= 25°C

Ta= -25°C

0.1

REVERSE DRAIN CURRENT : Is [A]

0.01

0.2 0.4 0.6 0.8 1.0 1.2

SOURCE-DRAIN VOLTAGE : VSD [V]

Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage

Data Sheet

Ta=125°C Ta=75°C Ta=25°C Ta= -25°C

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ES6U41

<Di>

]

Ω

(ON)[m

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

CAPACITANCE : C [pF]

1000

800

600

400

200

0246810

GATE-SOURCE VOLTAGE : VGS[V]

Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage

1000

100

Crss

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : V

Fig.13 Typical Capacitance vs. Drain-Source Voltage

ID= 1.50A

ID= 0.75A

Coss

Ciss

Ta=25°C Pulsed

Ta=25°C f=1MHz V

=0V

Data Sheet

1000

100

SWITCHING TIME : t [ns]

0.01 0.1 1 10

[V]

td(off)

td(on)

DRAIN-CURRENT : ID[A]

Fig.11 Switching Characteris tics

Ta=25°C V

= 15V

= 4.5V

=10Ω

Pulsed

[V]

GATE-SOURCE VOLTAGE : V

00.511.52

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Ta=25°C V

= 15V

= 1.5A

=10Ω

Pulsed

(A)

:IR (A)

100000

10000

1000

100

pulsed

Ta = 75

℃

Ta = 25

℃

Ta= - 2 5

℃

pulsed

(A)

0.1

Ta = 75

℃

Ta = 25

℃

Ta= - 25

0.01

℃

0.1

REVERSE CURRENT : I

0.01

0 5 10 15 20 25

REVERSE VOLTAGE : VR[V]

Fig.1 Reverse Current vs. Reverse Voltage

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FORWARD CURRENT : I

0.001

0 0.1 0.2 0.3 0.4 0.5 0.6

FORWARD VOLTAGE : V

Fig.2 Forward Current vs. Forward Voltage

[V]

2012.02 - Rev.B

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