Datasheet EN27C01055T, EN27C01055PI, EN27C01055P, EN27C01055JI, EN27C01055J Datasheet (EON)

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EN27C010 1Megabit EPROM (128K x 8)

FEATURES

EN27C010

•

Fast Read Access Time

-45, -55, -70, and -90ns

•

Single 5V Power Supply

•

Programming Voltage +12.75V

•

QuikRite

•

Typical programming time 20µs

•

Low Power CMOS Operation

• 1µ

•

30mA Operation (Max.)

•

CMOS- and TTL-Compatible I/O

•

High-Reliability CMOS Technology

Programming Algorithm

A Standby (Typical)

•

Latch-Up Immunity to 100mA from -1V to V

•

Two-Line Control (

•

Standard Product Identification Code

•

JEDEC Standard Pinout

•

32-pin PDIP

•

32-pin PLCC

•

32-pin TSOP (Type 1)

•

Commercial and Industrial Temperature

+ 1V

OE & CE)

Ranges

GENERAL DESCRIPTION

The EN27C010 is a low-power 1-Megabit, 5V-only one-time-programmable (OTP) read-only memory (EPROM). Organized into 128K words with 8 bits per word, it features QuikRite address location programm ing, typically at 20µs per byte. Any byte can be accessed in less than 45ns, eliminating the need for W AIT states in high-performance microprocessor systems. The EN27C010 has separate Output Enable (

OE ) and Chip Enable ( CE ) controls which eliminate

bus contention issues.

single-

A7 A6 A5 A4 A3 A2 A1 A0

PDIP Top View

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17

VCC PGM NC A14 A13 A8 A9 A11 OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3

FIGURE 1. PDIP

Pin Name Function

A0-A16 Addresses DQ0-DQ7 Outputs

VPP

A16 A15 A12

CE Chip Enable OE Output Enable PGM Program Strobe NC No Connect

DQ0 DQ1 DQ2 VSS

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FIGURE 2. TSOP

TSOP

EN27C010

A11

A8 A13 A14

PGM

A16 A15 A12

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

EN27C010

FIGURE 3. PLCC

PLCC Top View

A12 A16 VCC

A15 VPP PGM

32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17

OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 V

DQ2 DQ1 DQ0 A0 A1 A2 A3

A7 A6 A5 A4 A3 A2 A1 A0

DQ0

4232

3131

6 7 8 9 10 11 12 13

15 17 19

14 16 18

29 28 27 26 25 24 23 22 21

A14 A13 A8 A9 A11 OE A10 CE DQ7

DQ2 DQ3 DQ5

DQ1 VSS DQ4

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DQ6

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FIGURE 4. BLOCK DIAGRAM

EN27C010

CE PGM

CONTROL

LOGIC

Y-DECODER Y-SELECT A0-A16 ADDRESS INPUTS

X-DECODER

VCC

VPP

VSS

FUNCTIONAL DESCRIPTION

1024

INPUT/

OUTPUT

BUFFERS

1M BIT

CELL

MATRIX

DQ0 - DQ7

THE QUIKRITETM PROGRAMMING OF THE EN27C010

When the EN27C010 is delivered, the chip has all 1M bits in the “ONE”, or HIGH state. “ZEROs” are loaded into the EN27C010 through the procedure of programming.

The programming mode is entered when 12.75 ± 0.25V is applied to the V and

CE and PGM are at V

. For programming, the data to be pr ogramm ed is applied with 8

bits in parallel to the data pins. The QUIKRITE

programming flowchart in Figure 5 shows Eon’s interactive programming algorithm. The interactive algorithm reduces programming time by using 20 µs to 100 µs programming pulses and giving each address only as many pulses as is necessary in order to reliably program the data. After each pulse is applied to a given address, the data in that address is verified. If the data is not verified, additional pulses are given until it is verified or until the maximum number of pulses is reached. This process is repeated while sequencing through each address of the EN27C010. This part of the programming algorithm is done at V

= 6.25V to assure that each EPROM bit is programmed to a sufficiently high threshold

voltage. This ensures that all bits have sufficient margin. After the final address is completed, the entire EPROM memory is read at V

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= V

= 5.25 ± 0.25V to verify the entire memory.

pin, OE is at VIH,

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EN27C010

PROGRAM INHIBIT MODE

Programming of multiple EN27C010 in parallel with different data is also easily accomplished by using the Program Inhibit Mode. Except for may be common. A TTL low-level program pulse applied to an EN27C010 V

= 12.75 ± 0.25V, PGM LOW, and OE HIGH will program that EN27C010. A high-level

CE input inhibits the other EN27C010 from being programmed.

PROGRAM VERIFY MODE

Verification should be performed on the programmed bits to determining that they were correctly programmed. The verification should be performed with V

, and VPP at it programming voltage.

CE, all like inputs of the parallel EN27C010

CE input with

OE and CE at V

, PGM at

AUTO PRODUCT IDENTIFICATION

The Auto Product Identification mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment for the purpose of automatically matching the device to be programmed with its corresponding programming algorithm. This mode is functional in the 25°C ± 5°C ambient temperature range that is required when programming the EN27C010.

To activate this mode, the programming equipment must force 12.0 V ± 0.5V on address line A9 of the EN27C010. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from V V

during Auto Product Identification mode.

Byte 0 (A0 = V

) represents the manufacturer code, and byte 1 (A0 = VIH), the device code. For

the EN27C010, these two identifiers bytes are given in the Mode Select Table. All identifiers for manufacturer and device codes will possess odd parity, with the MSB (DQ7) defined as the parity bit.

When A1 = VIL, the EN27C010 will read out the binary code of 7F, continuation code, to

signify the unavailability of manufacturer ID codes.

to VIH, when A1 = VIH. All other address lines must be held at

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EN27C010

READ MODE

The EN27C010 has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip Enable ( device selection. Output Enable ( the output pins, independent of device selection. Assuming that addresses are stable, address access time (t the outputs (t addresses have been stable for at least t

) after the falling edge of OE , assuming the CE has been LOW and

) is equal to the delay from CE to output (tCE) . Data is available at

ACC

STANDBY MODE

CE) is the power control and should be used for

OE) is the output control and should be used to gate data to

- tOE.

ACC

The EN27C010 has CMOS standby mode which reduces the maximum V It is placed in CMOS standby when standby mode which reduces the maximum V standby when state, independent of the

CE is at V

. When in standby mode, the outputs are in a high-impedance

OE input.

CE is at V

± 0.3 V. The EN27C010 also has a TTL-

current to 1.0 mA. It is placed in TTL-

current to 20µA.

TWO-LINE OUTPUT CONTROL FUNCTION

To accommodate multiple memory connections, a two-line control function is provided to allow for:

1. Low memory power dissipation,

2. Assurance that output bus contention will not occur.

It is recommended that while

OE be made a common connection to all devices in the array and connected to the READ

line from the system control bus. This assures that all deselected memory devices are in their low-power standby mode and that the output pins are only active when data is desired from a particular memory device.

CE be decoded and used as the primary device-selection function,

SYSTEM CONSIDERATIONS

During the switch between active and standby conditions, transient current peaks are produced on the rising and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the output capacitance loading of the device. At a minimum, a 0.1µF ceramic capacitor (high frequency, low inherent inductance) should be used on each device between VCC and VSS to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on EPROM arrays, a 4.7µF bulk electrolytic capacitor should be used between VCC and VSS for each eight devices. The location of the capacitor should be close to where the power supply is connected to the array.

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MODE SELECT TABLE

EN27C010

Mode CE

Read Output Disable Standby (TTL) Standby (CMOS) Program

(4)

Program Verify Program Inhibit Manufacturer Code Device Code

(3)

V V V V V V V V V

IL IL IH

± 0.3V

CC IL IL IH IL IL

OE PGM

V V

XXXX

XX XXX XX XXX V V

IH IL

XX XXX V V

A0 A1 A9 V

(2)

XX X

XX X XX X

NOTES:

1) VH = 12.0V ± 0.5V

2) X = Either V

3) For Manufacturer Code and Device Code, A1 = V

or V

When A1 = VIL, both codes will read 7F

4) See DC Programming Characteristics for V

voltage during programming

EON’S STANDARD PRODUCT IDENTIFICATION CODE

Pins

Code Manufacturer Device Type Continuation

A0 A1 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0

01000111001C 110000000101 00011111117F 10011111117F

VH VH

(1)

Output

OUT

High Z High Z High Z D

OUT

High Z 1C 01

Hex

Data

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EN27C010

FIGURE 5. QUIKRITETM PROGRAMMING FLOW CHART

START

ADDRESS = FIRST LOCATION

VCC = 6.25V

VPP = 12.75V

X = 0

INTERACTIVE

SECTION

VERIFY

SECTION

INCREMENT ADDRESS

PROGRAM ONE 10µs PULSE

INCREMENT X

FAIL

VERIFY BYTE?

LAST ADDRESS

VCC = VPP = 5.25V

VERIFY ALL BYTES?

X = 25?

PASS

YES

FAIL

DEVICE FAILED

PASS

DEVICE PASSED

NOTE 1: Either 100µs or 20µs pulse.

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ABSOLUTE MAXIMUM RATINGS

EN27C010

Storage Temperature

-65àC to +125àC

Ambient Temperature

with Power Applied -40àC to +85àC

Voltage with Respect to V

All pins except A9, VPP, V A9, V

-0.6V to VCC + 0.5V

-0.6V to +13.5V

-0.6V to +7.0V

OPERATING RANGES

Commercial (C)

Case Temperature(Tc) 0àC to +70àC

Industrial (I)

Case Temperature(Tc) -40àC to +85àC

Supply READ Voltages

+4.50V to +5.5V

(Functionality is guaranteed between these limits)

Stresses above those shown above may cause permanent damage to the device. This is a stress rating only and operation above these specifications for extended periods may affect device reliability. Operation outside the

"OPERATING RANGES" shown above voids any and all warranty provisions.

DC CHARACTERISTICS FOR READ OPERATION

Symbol Parameter Min. Max. Unit Conditions

V V V V I I

I I I

IH IL

CC3

CC2

CC1

Output High Voltage 2.4 V IOH = -0.4mA Output Low Voltage 0.45 V IOL = 2.1mA Input High Voltage 2.0

+0.5

V Input Low Voltage -0.3 0.8 V Input Leakage Current -5 5 Output Leakage Current -10 10

µA

VIN = 0 to 5.5V V

= 0 to 5.5V

OUT

VCC Power -Down Current 10 µA CE = VCC ± 0.3V VCC Standby Current 1.0 mA CE = V

VCC Active Current 30 mA CE = VIL, f=5MHz,

= 0mA

OUT

VPP Supply Current Read 100 µA CE = OE = VIL,

VPP = 5.5V

CAPACITANCE

Symbol Parameter Typ. Max. Unit Conditions

OUT

VPP

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Input Capacitance 8 12 pF VIN = 0V Output Capacitance 8 12 pF V

OUT

= 0V

VPP Capacitance 18 25 pF VPP = 0V

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EN27C010

AC CHARACTERISTICS FOR READ OPERATION

EN27C010 / EN27C010L

-45 -55 -70 -90

Symbol Parameter Condition Min Max Min Max Min Max Min Max Unit

tACC (3) Address to

Output Delay

tCE (2) CE to Output

Delay

tOE (2, 3) OE to Output

Delay

tDF (4, 5) OE or CE High to Output Float,

whichever occurred first

tOH Output Hold from Address, CE

OE , whichever occurred first

Note: Please contact Marketing Department for other speed requirements.

CE = OE =

OE = V

FIGURE 6. AC WAVEFORMS FOR READ OPERATION

0000 ns

45 55 70 90 ns

25 25 30 35 ns

20 20 25 25 ns

ADDRESS ADDRESS VALID

tCE

tOE

tACC

OUTPUT

HIGH Z

tDF

tOH

OUTPUT

VALID

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FIGURE 7. OUTPUT TEST WAVEFORMS AND MEASUREMENTS

45 and 55 devices:

EN27C010

3.0V

DRIVING

LEVELS

0.0V

tR, tF < 5 ns (10% to 90%)

70 and 90 devices:

2.4V

DRIVING

LEVELS

0.45V

tR, tF < 20 ns (10% to 90%)

1.5V

AC MEASUREMENT LEVEL

2.0

AC MEASUREMENT LEVEL

0.8

Output Test Load

1.3V

(1N914)

3.3K

OUTPUT

Note: CL = 100pF including jig capacitance, except for the

-45 and -55 devices, where CL = 30pF.

DC PROGRAMMING CHARACTERISTICS

Test Limits

Symbol Parameter Conditions Min. Max Units

CC2

PP2

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Input Load Current V

IN = VIL, VIH

5.0

µA Input Low Level -0.5 0.8 V Input High Level 0.7 V Output Low Voltage I Output High Voltage

2.1 mA 0.45 V

OL =

OH =

-400 µA

2.4 V

+ 0.5 V

VCC Supply Current 40 mA V

Supply Current CE = PGM = V

IL,

10 mA

A9 Product Identification Voltage 11.5 12.5 V

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FIGURE 8. PROGRAMMING WAVEFORMS

EN27C010

ADDRESS

DATA

PGM

VIH VIL

6.5V

5.0V

13.0V

5.0V

VIH VIL

PROGRAM

ADDRESS STABLE

tAS tOE

DATA IN

tDS tDH

tVCS

tPRT

tCES

tVPS

tPW

READ

(VERIFY)

tAH

DATA OUT

VALID

tDFP

tOES

VIH

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VIL

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SWITCHING PROGRAMMING CHARACTERISTICS (TΑ = + 25 ° C ± 5 ° C)

PARAMETER SYMBOL STANDARD PARAMETER DESCRIPTION

OES

DFP

VPS

VCS

CES

Address Setup Time 2

OE Setup Time 2 µs

Data Setup Time 2 Address Hold Time 0 Data Hold Time 2 Output Enable to Output Float Delay 0 130 ns VPP Setup Time 2

PGM Program Pulse Width V

Setup Time 2 µs

Setup Time

Data Valid from

EN27C010

Min. Max Units

µs

µs µs µs

µs

2 µs

105

150 ns

µs

ORDERING INFORMATION

EN27C010 45 P I

TEMPERATURE RANGE

(Blank) = Commercial ( 0àC to +70àC) I = Industrial ( -40àC to +85àC)

PACKAGE

P = 32 Plastic DIP J = 32 Plastic PLCC T = 32 Plastic TSOP

SPEED

45 = 45ns 55 = 55ns 70 = 70ns 90 = 90ns

BASE PART NUMBER

EN = EON Silicon Devices 27 = EPROM C = CMOS 010 = 128K x 8

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