Page 1
Power management (dual transistors)
FEATURES
z 2SC4617 and DTC114E are housed independently in a package.
z
Power management circuit
z Power switching circuit in a single package
Mounting cost and area can be cut in half
z
MARKING: F24
=25℃ unless otherwise noted)
TR1 MAXIMUM RATINGS (T
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
IC
PC
TJ
T
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 7 V
Collector Current -Continuous 150 mA
Collector Power Dissipation 150 mW
Junction Temperature 150
Storage Temperature -55-150
a
℃
℃
EMF24
SOT-563
1
TR1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions M in T yp Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
(BR)CBOIC
V
(BR)CEOIC
V
(BR)EBOIE
I
CBO
I
EBO
h
FE
V
CE(sat)
VCE=12V,IC=2mA,f=100MHz 180 MHz
f
T
C
ob
=50μA,IE=0 60 V
=1mA,IB=0 50 V
=50μA,IC=0 7 V
VCB=60V,IE=0 0.1 μA
VEB=7V,IC=0 0.1 μA
VCE=6V,IC=1mA 180 390
IC=50mA,IB=5mA 0.4 V
VCB=12V,IE=0,f=1MHz 3.5 pF
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
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EMF24
DTr2 Maximum ratings (Ta=25 )
Parameter Symbol Limits Unit
Supply voltage
Input voltage
℃
50 V
V
CC
-10~40 V
V
IN
IO 50
Output current
100
I
C(MAX)
150 mW
Power dissipation
Junction temperature
Storage temperature
P
C
Tj 150
Tstg -55~150
Electrical characteristics (Ta=25 )
DTr2
℃
Parameter Symbol Min. Typ Max. Unit Conditions
V
0.5 VCC=5V ,IO=100μA
Input voltage
Output voltage V
Input current I
Output current I
DC current gain G
Input resistance R
I(off)
V
3
I(on)
0.3 V IO/II=10mA/0.5mA
O(on)
0.88 mA VI =5V
I
0.5 μA VCC=50V, VI=0
O(off)
30 VO=5V ,IO=5mA
I
7 10 13 KΩ
1
V
VO=0.3V ,IO=10 mA
mA
℃
℃
Resistance ratio R
Transition frequency f
2
JinYu
semiconductor
0.8 1 1.2
2/R1
250 MHz VO=10V ,IO=5mA,f=100MHz
T
www.htsemi.com
Date:2011/ 05
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