Datasheet emf23xv6 Datasheet

EMF23XV6T5

Dual Transistor ­Power Management

NPN/PNP Dual (Complementary)

Features

• Low V

CE(SAT)

, t0.5 V

• These are Pb−Free Devices

MAXIMUM RATINGS

Q1

Rating Symbol Value Unit

Collector-Base Voltage V

Collector-Emitter Voltage V

Collector Current I

Q2

Rating

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

CBO

CEO

C

Symbol Value Unit

CEO

CBO

EBO

C

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation TA = 25°C

Derate above 25°C

Thermal Resistance,

Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation TA = 25°C

Derate above 25°C

Thermal Resistance,

Junction-to-Ambient

Junction and Storage

Temperature Range

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad.

Symbol Max Unit

P

D

R

q

JA

Symbol Max Unit

P

D

R

q

JA

TJ, T

stg

50 Vdc

50 Vdc

100 mAdc

−60 V

−50 V

−6.0 V

−100 mAdc

357

(Note 1)

2.9

(Note 1)

350

(Note 1)

500

(Note 1)

4.0

(Note 1)

250

(Note 1)

−55 to +150 °C

mW

mW/°C

°C/W

mW

mW/°C

°C/W

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(3)

R

Q

1

R

(4) (5) (6)

1

2

6

1

SOT−563

CASE 463A

STYLE 1

(1)(2)

Q

2

MARKING DIAGRAM

UW M G

G

1

UW = Specific Device Code
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

EMF23XV6T5 SOT−563

(Pb−Free)

EMF23XV6T5G SOT−563

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

8000/Tape & Reel

8000/Tape & Reel

†

© Semiconductor Components Industries, LLC, 2006

April, 2006 − Rev. 2

1 Publication Order Number:

EMF23XV6/D

EMF23XV6T5

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C)

A

Symbol Min Typ Max Unit

Q1: NPN

Collector-Base Cutoff Current (V

= 50 V, IE = 0) I

CB

Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) I

Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) I

Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)

Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V

V

(BR)CBO

(BR)CEO

DC Current Gain (VCE = 10 V, IC = 5.0 mA) h

Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) V

Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

CBO

CEO

EBO

FE

CE(sat)

V

OL

V

OH

− − 100 nAdc

− − 500 nAdc

− − 0.5 mAdc

50 − − Vdc

50 − − Vdc

35 60 − −

− − 0.25 Vdc

− − 0.2 Vdc

4.9 − − Vdc

Input Resistor R1 7.0 10 13

Resistor Ratio R1/R2 0.8 1.0 1.2 −

Q2: PNP

Collector−Base Breakdown Voltage (I

= −50 mAdc, IE = 0)

C

Collector−Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V

Emitter−Base Breakdown Voltage (IE = −50 mAdc, IE = 0)

V

(BR)CBO

(BR)CEO

V

(BR)EBO

Collector−Base Cutoff Current (VCB = −30 Vdc, IE = 0) I

Emitter−Base Cutoff Current (VEB = −5.0 Vdc, IB = 0) I

Collector−Emitter Saturation Voltage (Note 3)
(I

= −50 mAdc, IB = −5.0 mAdc)

C

V

DC Current Gain (Note 3) (VCE = −6.0 Vdc, IC = −1.0 mAdc) h

Transition Frequency (VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz) f

Output Capacitance (VCB = −12 Vdc, IE = 0 Adc, f = 1.0 MHz) C

CBO

EBO

CE(sat)

FE

T

OB

−60 − − Vdc

−50 − − Vdc

−6.0 − − Vdc

− − −0.5 nA

− − −0.5

− − −0.5 Vdc

120 − 560 −

− 140 − MHz

− 3.5 − pF

2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

3. Pulse Test: Pulse Width ≤ 300 ms, DC ≤ 2%.

kW

mA

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2

EMF23XV6T5

TYPICAL ELECTRICAL CHARACTERISTICS — Q1, NPN

1

IC/IB = 10

0.1

0.01

, MAXIMUM COLLECTOR VOLTAGE (VOLTS)

0.001

CE(sat)

020 40

V

IC, COLLECTOR CURRENT (mA)

Figure 1. V

4

3

2

, CAPACITANCE (pF)

ob

1

C

0

010203040

V

, REVERSE BIAS VOLTAGE (VOLTS)

R

CE(sat)

TA=-25°C

versus I

C

Figure 3. Output Capacitance

75°C

f = 1 MHz
I

= 0 V

E

= 25°C

T

A

25°C

1000

VCE = 10 V

TA=75°C

25°C

-25°C

100

, DC CURRENT GAIN (NORMALIZED)

FE

h

10

50

1 10 100

I

, COLLECTOR CURRENT (mA)

C

Figure 2. DC Current Gain

100

75°C

10

1

0.1

0.01

, COLLECTOR CURRENT (mA)

C

I

0.001

50

01 234

25°C

TA=-25°C

56 78 910

V

, INPUT VOLTAGE (VOLTS)

in

VO = 5 V

Figure 4. Output Current versus Input Voltage

10

, INPUT VOLTAGE (VOLTS)

in

V

1

0.1

VO = 0.2 V

1002030

I

, COLLECTOR CURRENT (mA)

C

TA=-25°C

75°C

Figure 5. Input Voltage versus Output Current

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3

25°C

40

50

120

C

INPUT

CAPACITANCE

(

F)

TA = 25°C

EMF23XV6T5

TYPICAL ELECTRICAL CHARACTERISTICS − Q2, PNP

1000

TA = 75°C

VCE = 10 V

TA = 25°C

90

60

, COLLECTOR CURRENT (mA)

30

C

I

0

2

1.5

1

0.5

, COLLECTOR‐EMITTER VOLTAGE (V)

CE

V

0

0.01

300 mA

250
200

150

100

IB = 50 mA

0

36 9 15

VCE, COLLECTOR VOLTAGE (V)

Figure 6. IC − V

0.1 1 10 100

IB, BASE CURRENT (mA)

CE

12

TA = 25°C

100

DC CURRENT GAIN

10

900

800

700

600

500

400

300

COLLECTOR VOLTAGE (mV)

200

100

0

0.2

0.1

0.5 1 5 10 20 40 60 80 100 150 200

TA = - 25°C

1 10 100

IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

TA = 25°C
V

= 5 V

CE

Figure 8. Collector Saturation Region

13

12

p

11

10

9

8

,

ib

7

6

0

123 4140

VEB (V)

12

10

8

6

, CAPACITANCE (pF)

ob

4

C

2

0

Figure 10. Capacitance

Figure 9. On Voltage

10 20 30 40

VCB (V)

Figure 11. Capacitance

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4

EMF23XV6T5

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

D

−X−

6

12 3

e

45

b

0.08 (0.003) X

E

−Y−

6 5 PL

NOTES:

A

L

H

E

C

M

Y

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.50 0.55 0.60
b 0.17 0.22 0.27
C

0.08 0.12 0.18 0.003 0.005 0.007

D 1.50 1.60 1.70
E 1.10 1.20 1.30
e 0.5 BSC
L 0.10 0.20 0.30

H

1.50 1.60 1.70

E

STYLE 1:

PIN 1. EMITTER 1

2. BASE 1

3. COLLECTOR 2

4. EMITTER 2

5. BASE 2

6. COLLECTOR 1

INCHES

MIN NOM MAX

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

SOLDERING FOOTPRINT*

0.3

0.0118

0.45

0.0177

1.0

1.35

0.0531

0.0394

0.5

0.5

0.0197

0.0197

mm

ǒ

SCALE 20:1

inches

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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EMF23XV6/D

5