Datasheet EM6K1 Datasheet (ROHM)

Transistor

e

2.5V Drive Nch+Nch MOS FET

EM6K1

zStructure Silicon N-channel MOS FET

zFeatures

1) Two 2SK3019 transistors in a single EMT package.

2) The MOS FET elements are independent, eliminating mutual interference.

3) Mounting cost and area can be cut in half.

4) Low on-resistance.

5) Low voltage drive (2.5V) makes this device i deal for portable equipment.

zApplications Interfacing, switching (30V, 100mA)

zPackaging specifications zEquivalent circuit

Taping

T2R

8000

Type EM6K1

Package Code

Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for Tr1 and T r2.>

Parameter Drain−source voltage Gate−source voltage

Drain current

Total power dissipation

Channel temperature Storage temperature

∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands.

Continuous Pulsed

Symbol

DSS

V VGSS

D

I

IDP

PD

Tch

Tstg

∗

1

∗

2

Limits Unit

30

±20 ±100 ±400

150

−55 to +150

zExternal dimensions (Unit : mm)

EMT6

1.6

1.0

0.5

(5)

(6)

(4)

1.2

1.6

(2)

(1)

1pin mark

(3)

0.22

Each lead has same dimensions

Abbreviated symbol : K1

Gate Protection Diode ∗

Tr1

Tr2

∗ Gate Protection

(1)

∗ A protection diode has been built in between the gate and

the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.

V

V mA mA

mW / TOTAL

mW / ELEMENT120

°C °C

Diode

(2) (3)

0.13

EM6K1

0.5

(4)(5)(6)

(1)Tr1 Sourc (2)Tr1 Gate (3)Tr2 Drain (4)Tr2 Sourc (5)Tr2 Gate (6)Tr1 Drain

Rev.C 1/3

Transistor

5

s

)

0

.

5

)

5

)

0

zElectrical characteristics (T a=25°C) <It is the same characteristics for Tr1 and Tr2.>

Parameter Symbol

GSS

Gate−source leakage Drain−source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain−source on−starte resistance

Forward transfer admittance

Input capacitance Output capacitance Reverse transfer capacitance Turn−on delay time Rise time Turn−off delay time Fall time

I

V

(BR)DSS

I

V

R

DS(on)

R

DS(on)

Y

C C C

d(on)

t

d(off)

t

DSS

GS(th)

fs

iss

oss

rss

r

t

f

t

zElectrical characteristic curves

0.15

(A)

D

0.1

0.05

DRAIN CURRENT : I

4V

0

01234

DRAIN-SOURCE VOLTAGE : V

3V

3.5V

2.5V

2V

VGS=1.5V

DS

Fig.1 Typical Output Characteristic

(V)

200m 100m

50m

(A)

D

20m 10m

5m 2m

1m

0.5m

DRAIN CURRENT : I

0.2m

0.1m

Fig.2 Typical Transfer Characteristic

50

) (Ω)

(on

DS

Ta=125

−25

°C

75

°C

25

°C

20

10

5

V

GS

Pulsed

=4V

(on) (Ω)

DS

Typ. Max. Unit Conditions

Min.

GS

=

±20V, V

DS

=

−

±1

µAV

30

0.8

20

04

50

20

10

−

1.0

−

1.5

−

5 713

−

13

−

9

−

4

−

15

−

35

−

80

−

80

−

V

DS

=3V

Pulsed

1

75°C 25°C

−25°C

2

GATE-SOURCE VOLTAGE : V

Ta=125°C

5

−

8

−

Ta=125°C

75°C 25°C

−25°C

µA

Ω Ω

mS

pF pF pF

ns ns ns ns

3

V

GS

V

Pulsed

(V)

GS

I V V I I V

V V f

I V R

R

=2.5V

D

=

10µA, V

DS

=

DS

=

D

=

10mA, V

D

=

1mA, V

DS

=

DS

=

GS

=

1MHz

D

=

10mA, V

GS

=

L

=

500Ω

G

=

10Ω

30V, V 3V, I

3V, I 5V

0V

5V

0V

GS

=

0V

GS

=

0V

D

=

100µA

GS

=

4V

GS

=

2.5V

D

=

10mA

DD

5V

2

(th) (V

GS

1.5

1

0.5

GATE THRESHOLD VOLTAGE : V

0

−25 25 50 75 100 125 15

−50 0

CHANNEL TEMPERATURE : Tch (°C)

Fig.3 Gate Threshold Voltage vs

Channel Temperature

15

) (Ω)

(on

DS

10

EM6K1

V

DS

=3V

I

D

=0.1mA

Ta=25

°C

Pulsed

2

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.001

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0. DRAIN CURRENT : I

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current (Ι

D

(A)

2

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.5

0.001

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0. DRAIN CURRENT : I

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current (ΙΙ

D

(A)

Rev.C 2/3

5

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

0 5 10 15 2

GATE-SOURCE VOLTAGE : V

Fig.6 Static Drain-Source On-State

Resistance vs. Gate-Source Voltage

ID=0.1A

ID=0.05A

GS

(

V)

Transistor

0

te

.5

e

.5

.

.5

.

)

0

S

9

8

) (Ω)

7

(on

DS

6 5 4 3 2 1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

−50

Fig.7 Static Drain-Source On-Sta

ID=100mA

ID=50mA

0

50 75 100 125

−25

CHANNEL TEMPERATURE : Tch (

25 15

Resistance vs.

Channel Temperature

VGS=4V Pulsed

°C)

0.5

0.2

0.1

0.05

⏐ Yfs ⏐(S)

0.02

0.01

0.005

FORWARD TRANSFER

ADMITTANCE :

0.002

0.001

0.0001

0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05

Fig.8 Forward Transfer Admittanc

200m

(A)

100m

DR

50m 20m

V

GS

=4V

10m

5m 2m

1m

0.5m

REVERCE DRAIN CURRENT : I

0.2m

0.1m

SOURCE-DRAIN VOLTAGE : V

Fig.10 Reverse Drain Current vs

0V

10.50

Source-Drain Voltage (ΙΙ

Ta=25°C Pulsed

SD

(V)

1

50

20

10

5

2

CAPACITANCE : C (pF)

1

0.5

0.1

0.2 0.5 1 2 5 10 20 5

DRAIN-SOURCE VOLTAGE : V

Fig.11 Typical Capacitance vs.

zSwitching characteristics measurement circuits

Ta=−25°C

25°C 75°C

125°C

DRAIN CURRENT : I

vs. Drain Current

Drain-Source Voltage

Pulse Width

D

(A)

Ta=25

f=1MH VGS=0V Pulsed

C

DS

V

DS

Pulsed

0.1 0.2 0

°C

Z

C

iss

oss

C

rss

(V)

200m

=3V

(A)

100m

DR

50m 20m

10m

5m 2m

1m

0.5m

REVERCE DRAIN CURRENT : I

0.2m

0.1m

SOURCE-DRAIN VOLTAGE : V

Fig.9 Reverse Drain Current vs

1000

500

200 100

50

20

t

d(on)

10

SWITHING TIME : t (ns)

5

2

0.2 0.5 1 2 5 10 20 50

0.1

Fig.12 Switching Characteristics

EM6K1

Ta=125°C

−25°C

10.50

Source-Drain Voltage (Ι)

t

f

t

d(off)

t

r

DRAIN CURRENT : I

D

(mA)

V

Pulsed

75°C 25°C

SD

Ta=25°C

VDD=5V V

GS

R

G

GS

=0V

(V)

=5V

=10Ω

1

10

GS

V

GS

R

G

Fig.13 Switching Time Test Circuit

Rev.C 3/3

D

I

D.U.T.

V

D

R

L

V

DD

V

DS

50%

10%

90%

t

r

t

d(on)

t

on

Fig.14 Switching Time Waveforms

90%

t

d(off)

50%

10%

90%

t

f

t

off

Appendix

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1