Datasheet ELH0101K-883B, ELH0101AK-883B Datasheet (ELANT)

Page 1
ELH0101/883/8508901/2YX December 1994 Rev H
ELH0101/883/8508901/2YX
Power Operational Amplifier
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a ‘‘controlled document’’. Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation. Patent pending.
©
1985 Elantec, Inc.
Features
current
# 10 V/ms slew rate # 300 kHz power bandwidth # 850 mW standby power (
g
15V
supplies)
# 300 pA input bias current # Virtually no crossover distortion # 2 ms settling time to 0.01% # 5 MHz gain bandwidth # MIL-STD-883 devices 100%
manufactured in U.S.A.
Ordering Information
Part No. Temp. Range Package Outline
Ý
ELH0101AK/883Bb55§Ctoa125§C TO-3 MDP0003
ELH0101K/883Bb55§Ctoa125§C TO-3 MDP0003
8508901YX and 8508902YX are the SMD versions of this device.
Connection Diagram
0101– 1
Top View
Note: Electrically connected internally. No connection should be made to pin.
General Description
The ELH0101 is a wideband power operational amplifier featur­ing FET inputs, internal compensation, virtually no crossover distortion, and rapid settling time. These features make the ELH0101 an ideal choice for DC or AC servo amplifiers, deflec­tion yoke drivers, programmable power supplies, and disk head positioner amplifiers.
Elantec facilities comply with MIL-I-45208A and other applica­ble quality specifications. Elantec’s Military devices are 100% fabricated and assembled in our rigidly controlled, ultra-clean facilities in Milpitas, California. For additional information on Elantec’s Quality and Reliability Assurance policy and proce­dures request brochure QRA-1.
Equivalent Schematic
0101– 2
TABWIDE
Page 2
ELH0101/883/8508901/2YX
Power Operational Amplifier
Absolute Maximum Ratings
V
S
Supply Voltage
ELH0101, ELH0101A
g
22V
P
D
Power Dissipation at T
A
e
25§C5W
Derate linearly at 25
§
C/W
to zero at 150
§
C
P
D
Power Dissipation at T
C
e
25§C 62W
Derate linearly at 2
§
C/W
to zero at 150
§
C
Differential Input Voltage
ELH0101, ELH0101A
g
40V but
k
g
V
S
VINInput Voltage Range
ELH0101, ELH0101A
g
20V but
k
g
V
S
Peak Output Current (50 ms pulse) 5A Output Short Circuit Duration
(within rated power dissipation, R
SC
e
0.35X,T
A
e
25§C) Continuous
T
A
Operating Temperature Range:
ELH0101, ELH0101A
b
55§Ctoa125§C
T
J
Maximum Junction Temperature 150§C
T
ST
Storage Temperature
b
65§Ctoa150§C
Lead Temperature
(Soldering, 10 seconds) 300
§
C
Important Note: All parameters having Min/Max specifications are guaranteed. The Test Level column indicates the specific device testing actually performed during production and Quality inspection. Elantec performs most electrical tests using modern high-speed automatic test equipment, specifically the LTX77 Series system. Unless otherwise noted, all tests are pulsed tests, therefore T
J
e
T
C
e
TA.
Test Level Test Procedure
I 100% production tested and QA sample tested per QA test plan QCX0002.
II 100% production tested at T
A
e
25§C and QA sample tested at T
A
e
25§C,
T
MAX
and T
MIN
per QA test plan QCX0002.
III QA sample tested per QA test plan QCX0002. IV Parameter is guaranteed (but not tested) by Design and Characterization Data.
V Parameter is typical value at T
A
e
25§C for information purposes only.
DC Electrical Characteristics
(Note 1) V
S
e
g
15V, T
A
e
25§C, V
CM
e
0V
Parameter Description Test Conditions
ELH0101 ELH0101A
Level
Test
Units
Min Typ Max Min Typ Max
V
OS
Input Offset 1 10 1 3 I mV Voltage
T
MIN
s
T
A
s
T
MAX
,
15 7 I mV
ELH0101
DVOS/DPDChange in Input (Note 2)
Offset Voltage with 150 150 V mV/W Dissipated Power
DVOS/DT Change in Input
Offset Voltage with 10 10 V mV/
§
C
Temperature
I
B
Input Bias Current 1,000 300 I pA
T
A
s
T
MAX
,
1,000 300 I nA
ELH0101
2
TDis 2.3in
Page 3
ELH0101/883/8508901/2YX
Power Operational Amplifier
DC Electrical Characteristics
(Note 1) V
S
e
g
15V, T
A
e
25§C, V
CM
e
0V Ð Contd.
Parameter Description Test Conditions
ELH0101 ELH0101A
Level
Test
Units
Min Typ Max Min Typ Max
I
OS
Input Offset 250 75 I pA Current
T
A
s
T
MAX
,
250 75 I nA
ELH0101, A
A
VOL
Large Signal V
O
e
g
10V, R
L
e
10X
50 200 50 200 I V/mV
Voltage Gain
V
O
Output Voltage R
SC
e
0X,A
V
e
1,
g
11.7g12.5
g
11.7g12.5 I V
Swing R
L
e
100X (Note 3)
R
SC
e
0X,A
V
e
1,
g11g
11.6
g11g
11.6 I V
R
L
e
10X (Note 3)
R
SC
e
0X,A
V
e
1,
g
10.5g11
g
10.5g11 I V
R
L
e
5X (Note 3)
CMRR Common-Mode V
IN
e
g
10V
85 100 85 100 I dB
Rejection Ratio
PSRR Power Supply
g
5VsV
S
s
g
15V 85 100 85 100 I dB
Rejection Ratio
a
5VsVS(a)
s
a
15V,
80 110 80 110 I dB
V
S
(b)eb15V
b
5VtVS(b)
t
b
15V,
80 95 80 95 I dB
VS(a)ea15V
I
S
Supply Current 28 35 28 35 I mA
AC Electrical Characteristics
V
S
e
g
15V, T
A
e
T
C
e
T
J
e
25§C
Parameter Description Test Conditions
ELH0101 ELH0101A
Level
Test
Units
Min Typ Max Min Typ Max
e
n
Equivalent Input fe1 kHz
25 25 V nV/
0
Hz
Noise Voltage
C
IN
Input Capacitance fe1 MHz 3 3 V pF
PBW Power Bandwidth, R
L
e
10X,A
V
e
1
300 300 V kHz
b
3dB
SR Slew Rate R
L
e
10X,A
V
e
1
7.5 10 7.5 10 I Vms
ELH0101AK
tr,t
f
Small Signal Rise R
L
e
10X,A
V
e
1
200 200 V ns
or Fall Time
Small Signal R
L
e
10X,A
V
e
1
10 10 V %
Overshoot
3
TDis 3.5inTDis 2.2in
Page 4
ELH0101/883/8508901/2YX
Power Operational Amplifier
AC Electrical Characteristics
V
S
e
g
15V, T
A
e
T
C
e
T
J
e
25§C Ð Contd.
Parameter Description Test Conditions
ELH0101 ELH0101A
Level
Test
Units
Min Typ Max Min Typ Max
GBW Gain-Bandwidth R
L
e %
,A
V
e
1
4 5 4 5 I MHz
Product ELH0101AK
t
S
Large Signal Settling Time R
L
e %
,A
V
e
12 2Vms
(0.01%)
THD Total Harmonic fe1 kHz, P
O
e
0.5W,
0.008 0.008 V %
Distortion R
L
e
10X
Note 1: Specification is at T
A
e
25§C. Actual values at operating temperature may differ from the T
A
e
25§C value. When supply
voltages are
g
15V, quiescent operating junction temperature will rise approximately 20§C without heatsinking. Accordingly,
V
OS
may change 0.5 mV and IBand IOSwill change significantly during warm-ups. Refer to IBvs. temperature and power
dissipation graphs for expected values.
Note 2: Change in offset voltage with dissipated power is due entirely to average device temperature rise and not to differential
thermal feedback effects. Test is performed without any heatsink.
Note 3: At light loads, the output swing may be limited by the second stage rather than the output stage. See the application section
under ‘‘Output swing enhancement’’ for hints on how to obtain extended operation. R
SC
is the current sense resistor.
4
TDis 1.5in
Page 5
ELH0101/883/8508901/2YX
Power Operational Amplifier
Typical Performance Curves
Power Dissipation
Safe Operating Area Current
Quiescent Power Supply
Input Bias Current Warm-up
Input Bias Current After
Voltage Range
Input Common-Mode
Frequency Response
Open-Loop Small Signal
Frequency
Output Voltage Swing vs
Ratio vs Frequency
Common-Mode Rejection
0101– 3
5
Page 6
ELH0101/883/8508901/2YX
Power Operational Amplifier
Typical Performance Curves
Ð Contd.
Ratio vs Frequency
Power Supply Rejection
Settling Time vs Frequency
Total Harmonic Distortion
vs Gain
Total Harmonic Distortion
Voltage
Equivalent Input Noise
Swing Enhancement
Output Voltage Swing with
Load Resistance
Output Voltage Swing vs
Resistance
Open-Loop Output
Resistance vs Frequency
Open-Loop Output
0101– 4
6
Page 7
ELH0101/883/8508901/2YX
Power Operational Amplifier
Typical Performance Curves
Ð Contd.
0101– 5
Typical Applications
High Power Voltage Follower
0101– 6
High Power Voltage Follower
with Swing Enhancement
0101– 7
Restricting Outputs to Positive Voltage Only
0101– 8
Generating a Split Supply
from a Single Voltage Supply
0101– 9
7
Page 8
ELH0101/883/8508901/2YX
Power Operational Amplifier
Typical Applications
Ð Contd.
g
5tog35 Power Source or Sink
0101– 10
CRT Deflection Yoke Driver
0101– 11
DC Servo Amplifier
0101– 12
High Current Source/Sink
0101– 13
8
Page 9
ELH0101/883/8508901/2YX
Power Operational Amplifier
Applications Information
Input Voltages
The ELH0101 operational amplifier contains JFET input devices which exhibit high reverse breakdown voltages from gate to source or drain. This eliminates the need for input clamp diodes, so that high differential input voltages may be applied without a large increase in input current. However, neither input voltage should be allowed to exceed the negative supply as the resultant high current flow may destroy the unit.
Exceeding the negative common-mode limit on either input will cause a reversal of the phase to the output and force the amplifier output to the corresponding high or low state. Exceeding the negative common-mode limit on both inputs will force the amplifier output to a high state. In nei­ther case does a latch occur since raising the in­put back within the common-mode range again puts the input stage and thus the amplifier in a normal operating mode.
Exceeding the positive common-mode limit on a single input will not change the phase of the out­put, however; if both inputs exceed the limit, the output of the amplifier will be forced to a high state.
These amplifiers will operate with the common­mode input voltage equal to the positive supply. In fact, the common-mode voltage may exceed the positive supply by approximately 100 mV, in­dependent of supply voltage and over the full op­erating temperature range. The positive supply may therefore be used as a reference on an input as, for example, in a supply current monitor and/ or limiter.
With the ELH0101 there is a temptation to re­move the bias current compensation resistor nor­mally used on the non-inverting input of a sum­ming amplifier. Direct connection of the inputs to ground or a low-impedance voltage source is not recommended with supply voltages greater than 3V. The potential problem involves loss of
one supply which can cause excessive current in the second supply. Destruction of the IC could result if the current to the inputs of the device is not limited to less than 100 mA or if there is much more than 1 mF bypass on the supply bus.
Although difficulties can be largely avoided by installing clamp diodes across the supply lines on every PC board, a conservative design would in­clude enough resistance in the input lead to limit current to 10 mA if the input lead is pulled to either supply by internal currents. This precau­tion is by no means limited to the ELH0101.
Layout Considerations
When working with circuitry capable of resolving picoampere level signals, leakage currents in cir­cuitry external to the op amp can significantly degrade performance. High quality insulation is a must (Kel-F and Teflon rate high). Proper clean­ing of all insulating surfaces to remove fluxes and other residues is also required. This includes the IC package as well as sockets and printed circuit boards. When operating in high humidity envi­ronments or near 0
§
C, some form of surface coat­ing may be necessary to provide a moisture barri­er.
The effects of board leakage can be minimized by encircling the input circuitry with a conductive guard ring operated at a potential close to that of the inputs.
Electrostatic shielding of high impedance circuit­ry is advisable.
Error voltages can also be generated in the exter­nal circuitry. Thermocouples formed between dis­similar metals can cause hundreds of microvolts of error in the presence of temperature gradients.
Since the ELH0101 can deliver large output cur­rents, careful attention should be paid to power supply, power supply bypassing and load cur­rents. Incorrect grounding of signal inputs and load can cause significant errors.
9
Page 10
ELH0101/883/8508901/2YX
Power Operational Amplifier
Applications Information
Ð Contd. Every attempt should be made to achieve a sin­gle point ground system as shown in the figure below.
0101– 14
Bypass capacitor CBXshould be used if the lead lengths of bypass capacitors C
B
are long. If a sin­gle point ground system is not possible, keep sig­nal, load, and power supply from intermingling as much as possible. For further information on proper grounding techniques refer to ‘‘Grounding and Shielding Techniques in Instrumentation’’ by Morrison, and ‘‘Noise Reduction Techniques in Electronic Systems’’ by Ott (both published by John Wiley and Sons).
Leads or PC board traces to the supply pins, short circuit current limit pins, and the output pin must be substantial enough to handle the high currents that the ELH0101 is capable of producing.
Short Circuit Current Limiting
Should current limiting of the output not be nec­essary, SC
a
should be shorted to Vaand SC
b
should be shorted to Vb. Remember that the short circuit current limit is dependent upon the total resistance seen between the supply and cur­rent limit pins. This total resistance includes the desired resistor plus leads, PC Board traces, and solder joints.* Assuming a zero TCR current lim­it resistor, typical temperature coefficient of the short circuit will be approximately 0.3%.
Thermal Resistance
The thermal resistance between two points of a conductive system is expressed as:
i
12
e
T
1
b
T
2
P
D
§
C/W (1)
where subscript order indicates the direction of heat flow. A simplified heat transfer circuit for a cased semiconductor and heatsink system is shown in the figure below.
The circuit is valid only if the system is in ther­mal equilibrium (constant heat flow) and there are, indeed, single specific temperatures, T
J,TC
,
and T
S
, (no temperature distribution in junction, case, or heatsink). Nevertheless, this is a reason­able approximation of actual performance.
0101– 15
*Short circuit current will be limited to approximately
0.6
RSC
.
The junction-to-case thermal resistance, iJC, specified in the data sheet depends upon the ma­terial and size of the package, die size and thick­ness, and quality of the die bond to the case or lead frame. The case-to-heatsink thermal resist­ance, i
CS
, depends on the mounting of the device
to the heatsink and upon the area and quality of the contact surface. Typical i
CS
for a TO-3 pack-
age is 0.5
§
C/W to 0.7§C/W, and 0.3§C/W to
0.5
§
C/W using silicone grease.
The heatsink to ambient thermal resistance, i
SA
, depends on the quality of the heatsink and the ambient conditions.
10
Page 11
ELH0101/883/8508901/2YX
Power Operational Amplifier
Application Information
Ð Contd. Cooling is normally required to maintain the worst case operating junction temperature, T
J
,of the device below the specified maximum value, T
J(MAX).TJ
can be calculated from known oper-
ating conditions. Rewriting equation (1), we find:
i
JA
e
T
J
b
T
A
P
D
§
C/W
T
J
e
T
A
a
PDi
JA
§
C
Where: P
D
e
(V
S
b
V
OUT)IOUT
a
l
V
g
(Vb)lI
Q
i
JA
e
i
JC
a
i
CS
a
iSAand
V
S
e
Supply Voltage
i
JC
for the ELH0101 is typically 2§C/W.
Stability and Compensation
As with most amplifiers, care should be taken with lead dress, component placement and sup­ply decoupling in order to ensure stability. For example, resistors from the output to an input should be placed with the body close to the input to minimize ‘‘pickup’’ and maximize the frequen­cy of the feedback pole by minimizing the capaci­tance from the input to ground.
A feedback pole is created when the feedback around any amplifier is resistive. The parallel re­sistance and capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole. In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed loop gain and consequently there is negli­gible effect on stability margin. However, if the feedback pole is less than approximately six times the expected 3 dB frequency, a lead capaci­tor should be placed from the output to the input of the op amp. The value of the added capacitor should be such that the RC time constant of this capacitor and the resistance it parallels is greater than or equal to the original feedback pole time constant.
Some inductive loads may cause output stage os­cillation. A 0.01 mF ceramic capacitor in series with a 10X resistor from the output to ground will usually remedy this situation.
0101– 16
Capacitive loads may be compensated for by tra­ditional techniques. (See ‘‘Operational Amplifi­ers: Theory and Practice’’ by Roberge, published by Wiley.)
0101– 17
A similar but alternative technique may be used for the ELH0101.
0101– 18
11
Page 12
ELH0101/883/8508901/2YX
Power Operational Amplifier
Output Swing Enhancement
When the feedback pin is connected directly to the output, the output voltage swing is limited by the driver stage and not by output saturation. Output swing can be increased by taking gain in the output stage as shown below in the High Power Voltage Follower with Swing Enhance­ment. Whenever gain is taken in the output stage, either the output stage, or the entire op
amp must be appropriately compensated to ac­count for the additional loop gain.
Output Resistance
The open-loop output resistance of the ELH0101 is a function of the load current. No-load output resistance is approximately 10X. This decreases to under an X for load currents exceeding 100 mA.
Burn-In Circuit
0101– 19
12
Page 13
ELH0101/883/8508901/2YX
Power Operational Amplifier
ELH0101 Macromodel
* Connections:ainput
*
l
b
Input
*
ll
V
a
*
lll
Isc
a
*
llll
Feedback
*
lllll
V
b
*
llllll
Isc
b
*
lllllll
Output
*
llllllll
*em0101 6 5213784 .subckt buffer 21 2 1 3 7 8 4 * Resistors r132710 r2 26 3 10 r3 30 7 50 r422350 r5 29 7 2K r62222K r7 27 28 10 r8 24 26 10 * Transistors q14308qnd d1 8 4 dclamp q24231qpd d2 4 1 dclamp q372122qp q4 23 22 24 qn q5 21 21 26 qn q62312qp q722129qn q8 27 27 21 qn q9 30 29 28 qp q103087qn *Models .model qpd pnp (is
e
88.013eb12 ikfe5A tfe32nS vafe50V cjee45pF cjce60pF
a
xtbe2.1 bfe12000 nee4 isee1eb10)
.model qnd npn (is
e
88.013eb12 ikfe5A tfe32nS vafe50V cjee45pF cjce60pF
a
xtbe2.1 bfe12000 nee4 isce1eb10)
.model dclamp d (is
e
10eb28 tte100nS)
13
TABWIDE
TDis 5.2in
Page 14
ELH0101/883/8508901/2YX
Power Operational Amplifier
ELH0101 Macromodel
Ð Contd.
.model qp pnp (ise10eb15 xtie3ege1.11V vafe91V bfe200 nee2.321 isee6.2fA
a
ikfe500mA xtbe2.1 bre3.3 nce2 cjce14.6pF vjce0.75V mjce0.3333 fce0.5 cjee20pF
a
vjee0.75V mjee0.3333 tre29nS tfe0.4nS itfe0.4 vtfe10 xtfe2rbe10)
.model qn npn (is
e3eb
15 xtie3ege1.11V vafe151V bfe220 nee1.541 isee14fA
a
ikfe500mA xtbe2.1 bre6nce2 cjce14.6pF vjce0.75V mjce0.3333 fce0.5 cjee26pF
a
vjee0.75V mjee0.3333 tre51nS tfe0.4nS itfe0.6 vtfe1.7 xtfe2rbe10)
.ends buffer
* lf156 Subcircuit * Connections:
a
Input
*
l
b
Input
*
ll
V
a
*
lll
V
b
*
llll
Output
*
lllll
.subckt lf156 6 52721 *Input Stage vcm2 40 7 2 rd1 40 80 1.06K rd2 40 90 1.06K j1 80 102 12 jm1 j2 90 103 12 jm2 cin 5 6 4pF rg1 5 102 2 rg2 6 103 2 * CM Clamp dcm1 107 103 dm4 dcm2 105 107 dm4 vcmc 105 7 4V ecmp 106 7 103 7 1 rcmp 107 106 10K dcm3 109 102 dm4 dcm4 105 109 dm4 ecmn 108 2 102 2 1 rcmn 109 108 10K cl 80 90 15pF iss 2 12 0.48mA gosit 2 12 90 80 2.4e
b
4
* Intermediate Stage gcm 0 88 12 0 9.425e
b
9
ga 88 0 80 90 9.425e
b
4 r2 88 0 100K c2 91 88 30pF gb 91 0 88 0 28.6 ro2 91 0 74
14
TABWIDE
TDis 5.8in
Page 15
ELH0101/883/8508901/2YX
Power Operational Amplifier
ELH0101 Macromodel
Ð Contd.
* Output Stage rso 91 21 1 ecl 18 0 91 21 20.69 gcl0882001 rcl 20 0 1K d1 18 20 dm1 d2 20 18 dm1 d3a 131 70 dm3 d3b 13 131 dm3 gpl0887021 vc 13 21 3.1552V rpla 2 70 10K rplb 2 131 100K d4a 60 141 dm3 d4b 141 14 dm3 gnl0886071 ve 21 14 3.1552V rnla 60 7 10K rnlb 141 7 100K ip 2 7 4.52mA dsub 7 2 dm2 * Models .model jm1 pjf (is
e
3.15eb11 betae9.2528eb4 vtoeb1.0)
.model jm2 pjf (is
e
2.85eb11 betae9.2528eb4 vtoeb0.999)
.model dm1 d (is
e
1.0eb15)
.model dm2 d (is
e
8.0eb16 bve52.8)
.model dm3 d (is
e
1.0eb16)
.model dm4 d (is
e
1.0eb9)
ends lf156 * lf156 model courtesy of Linear Technology Corp.
15
TDis 3.9in
Page 16
ELH0101/883/8508901/2YXDecember 1994 Rev H
ELH0101/883/8508901/2YX
Power Operational Amplifier
ELH0101 Macromodel
Ð Contd.
0101– 20
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described herein and makes no representations that they are free from patent infringement.
Elantec, Inc.
1996 Tarob Court Milpitas, CA 95035 Telephone: (408) 945-1323
(800) 333-6314
Fax: (408) 945-9305
European Office: 44-71-482-4596
WARNING Ð Life Support Policy
Elantec, Inc. products are not authorized for and should not be used within Life Support Systems without the specific written consent of Elantec, Inc. Life Support systems are equipment in­tended to support or sustain life and whose failure to perform when properly used in accordance with instructions provided can be reasonably expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. products in Life Support Systems are requested to contact Elantec, Inc. factory headquarters to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replace­ment of defective components and does not cover injury to per­sons or property or other consequential damages.
Printed in U.S.A.16
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