Datasheet EL5410CR-T13, EL5410CR, EL5210CY-T7, EL5210CY-T13, EL5210CY Datasheet (ELANT)
...Page 1
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
EL5210C/EL5410C
Features
• 30MHz -3dB bandwidth
• Supply voltage = 4.5V to 16.5V
• Low supply current (per amplifier)
= 2.5mA
• High slew rate = 33V/µs
• Unity-gain stable
• Beyond the rails input capability
• Rail-to-rail output swing
• Available in both standard and
space-saving fine pitch packages
Applications
• Driver for A-to-D Converters
• Data Acquisition
• Video Processing
• Audio Processing
• Active Filters
• Tes t Equi p ment
• Battery Powered Applications
• Portable Equipment
Ordering Information
Part No. Package Tape & Re el Outline #
EL5210CS 8-Pin SOIC - MDP0027
EL5210CS-T13 8-Pin SOIC 13” MDP0027
EL5210CY 8-Pin MSOP - MDP0043
EL5210CY-T7 8-Pin MSOP 7” MDP0043
EL5210CY-T13 8-Pin MSOP 13” MDP0043
EL5410CS 14-Pin SOIC - MDP0027
EL5410CS-T13 14-Pin SOIC 13” MDP0027
EL5410CR 14-Pin TSSOP - MDP0044
EL5410CR-T13 14-Pin TSSOP 13” MDP0044
General Description
The EL5210C and EL5410C are low power, high voltage rail-to-rail
input-output amplifiers. The EL5210C contains two amplifiers in one
package and the EL5410C contains four amplifiers. Operating on supplies ranging from 5V to 15V, while consuming only 2.5mA per
amplifier, the EL5410C and EL5210C have a bandwidth of 30MHz --
(-3dB). They also provide common mode input ability beyond the supply rails, as well as rail-to-rail output capability. This enables these
amplifiers to offer maximum dynamic range at any supply voltage.
The EL5410C and EL5210C also feature fast slewing and settling
times, as well as a high output drive capability of 30mA (sink and
source). These features make these amplifiers ideal for high speed filtering and signal conditioning application. Other applications include
battery power, portable devices, and anywhere low power consumption is important.
The EL5410C is available in a space-saving 14-Pin TSSOP package,
as well as the industry-standard 14-Pin SOIC. The EL5210C is available in the 8-Pin MSOP and 8-Pin SOIC packages. Both feature a
standard operational amplifier pin out. These amplifiers operate over a
temperature range of -40°C to +85°C.
Connection Diagram
VOUTA
1
VINA-
2
VINA+
VINB+
VINB-
VOUTB
-
3
+
4
5
+
6
-
7
EL5410C (TSSOP-14, SOIC-14)
VOUTD
14
VIND-
13
-
VIND+
12
+
11
VS-VS+
VINC+
10
+
VINC-
9
-
VOUTC
8
1
VOUTA
2
VINA-
VINA+
-
+
3
4
VS-
EL5210C (MSOP-8, SOIC-8)
8
VS+
7
VOUTB
6
-
VINB-
+
5
VINB+
November 16, 2000
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2000 Elantec Semiconductor, Inc.
Page 2
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Absolute Maximum Ratings (T
Values beyond absolute maximum ratings can cause the device to be prematurely damaged. Absolute maximum ratings are stress ratings only and
EL5210C/EL5410C
functional device operation is not implied.
Supply Voltage between V
Input Voltage V
Maximum Continuous Output Current 30mA
+ and VS- +18V
S
= 25°C)
A
- - 0.5V, VS +0.5V
S
Maximum Die Temperature +125°C
Storage Temperature -65°C to +150°C
Operating Temperature -40°C to +85°C
Power Dissipation See Curves
ESD Voltage 2kV
Important Note:
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: T
= TC = T
J
A
Electrical Characteristics
VS+ = +5V, VS - = -5V, RL = 1kΩ and CL = 12pF to 0V, TA = 25°C unless otherwise specified.
Parameter Description Condition Min Typ Max Unit
Input Characteristics
V
OS
TCV
I
B
R
IN
C
IN
CMIR Common-Mode Input Range -5.5 +5.5 V
CMRR Common-Mode Rejection Ratio for V
A
VOL
Output Characteristics
V
OL
V
OH
I
SC
I
OUT
Power Supply Performance
PSRR Power Supply Rejection Ratio V
I
S
Dynamic Performance
SR Slew Rate
t
S
BW -3dB Bandwidth 30 MHz
GBWP Gain-Bandwidth Product 20 MHz
PM Phase Margin 50 °
CS Channel Separation f = 5MHz 110 dB
d
G
d
P
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
Input Offset Voltage V
Average Offset Voltage Drift
OS
Input Bias Current V
[1]
= 0V 3 15 mV
CM
7µV/°C
= 0V 2 60 nA
CM
Input Impedance 1GΩ
Input Capacitance 2pF
from -5.5V to 5.5V 50 70 dB
Open-Loop Gain -4.5V ≤ V
IN
≤ 4.5V 65 80 dB
OUT
Output Swing Low IL = -5mA -4.9 -4.8 V
Output Swing High IL = 5mA 4.8 4.9 V
Short Circuit Current ±120 mA
Output Current ±30 mA
is moved from ±2.25V to ±7.75V 60 80 dB
S
Supply Current (Per Amplifier) No Load 2.5 3.75 mA
[2]
-4.0V ≤ V
≤ 4.0V, 20% o 80% 33 V/µs
OUT
Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 ns
Differential Gain
Differential Phase
[3]
[3]
RF = RG = 1kΩ and V
RF = RG = 1kΩ and V
= 1.4V 0.12 %
OUT
= 1.4V 0.17 °
OUT
2
Page 3
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Electrical Characteristics
VS+ = 5V, VS- = 0V, RL = 1kΩ and CL = 12pF to 2.5V, TA = 25°C unless otherwise specified.
Parameter Description Condition Min Typ Max Unit
Input Characteristics
V
OS
TCV
OS
I
B
R
IN
C
IN
CMIR Common-Mode Input Range -0.5 +5.5 V
CMRR Common-Mode Rejection Ratio for V
A
VOL
Output Characteristics
V
OL
V
OH
I
SC
I
OUT
Power Supply Performance
PSRR Power Supply Rejection Ratio V
I
S
Dynamic Performance
SR Slew Rate
t
S
BW -3dB Bandwidth 30 MHz
GBWP Gain-Bandwidth Product 20 MHz
PM Phase Margin 50 °
CS Channel Separation f = 5MHz 110 dB
d
G
d
P
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
Input Offset Voltage V
Average Offset Voltage Drift
[1]
Input Bias Current V
= 2.5V 3 15 mV
CM
7µV/°C
= 2.5V 2 60 nA
CM
Input Impedance 1GΩ
Input Capacitance 2pF
from -0.5V to 5.5V 45 66 dB
Open-Loop Gain 0.5V ≤ V
IN
≤ 4.5V 65 80 dB
OUT
Output Swing Low IL = -5mA 100 200 mV
Output Swing High IL = 5mA 4.8 4.9 V
Short Circuit Current ±120 mA
Output Current ±30 mA
is moved from 4.5V to 15.5V 60 80 dB
S
Supply Current (Per Amplifier) No Load 2.5 3.75 mA
[2]
1V ≤ V
≤ 4V, 20% o 80% 33 V/µs
OUT
Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 ns
Differential Gain
Differential Phase
[3]
[3]
RF = RG = 1kΩ and V
RF = RG = 1kΩ and V
= 1.4V 0.30 %
OUT
= 1.4V 0.66 °
OUT
EL5210C/EL5410C
3
Page 4
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Electrical Characteristics
VS+ = 15V, VS- = 0V, RL = 1kΩ and CL = 12pF to 7.5V, TA = 25°C unless otherwise specified.
EL5210C/EL5410C
Parameter Description Condition Min Typ Max Unit
Input Characteristics
V
OS
TCV
I
B
R
IN
C
IN
CMIR Common-Mode Input Range -0.5 +15.5 V
CMRR Common-Mode Rejection Ratio for V
A
VOL
Output Characteristics
V
OL
V
OH
I
SC
I
OUT
Power Supply Performance
PSRR Power Supply Rejection Ratio V
I
S
Dynamic Performance
SR Slew Rate
t
S
BW -3dB Bandwidth 30 MHz
GBWP Gain-Bandwidth Product 20 MHz
PM Phase Margin 50 °
CS Channel Separation f = 5MHz 110 dB
d
G
d
P
1. Measured over operating temperature range
2. Slew rate is measured on rising and falling edges
3. NTSC signal generator used
Input Offset Voltage V
Average Offset Voltage Drift
OS
Input Bias Current V
[1]
= 7.5V 3 15 mV
CM
7µV/°C
= 7.5V 2 60 nA
CM
Input Impedance 1GΩ
Input Capacitance 2pF
from -0.5V to 15.5V 53 72 dB
Open-Loop Gain 0.5V ≤ V
IN
≤ 14.5V 65 80 dB
OUT
Output Swing Low IL = -7.5mA 170 350 mV
Output Swing High IL = 7.5mA 14.65 14.83 V
Short Circuit Current ±120 mA
Output Current ±3 0 mA
is moved from 4.5V to 15.5V 60 80 dB
S
Supply Current (Per Amplifier) No Load 2.5 3.75 mA
[2]
1V ≤ V
≤ 14V, 20% o 80% 33 V/µ s
OUT
Settling to +0.1% (AV = +1) (AV = +1), VO = 2V Step 140 n s
Differential Gain
Differential Phase
[3]
[3]
RF = RG = 1kΩ and V
RF = RG = 1kΩ and V
= 1.4V 0.10 %
OUT
= 1.4V 0.11 °
OUT
4
Page 5
Typical Performance Curves
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
EL5410C Input Offset Voltage Distribution
500
246
Typical
Production
Distortion
VS=±5V
T
=25°C
A
400
300
200
Quantity (Amplifiers)
100
0
5
4
3
2
Input Offset Voltage (mV)
1
0
-8-6-4-2-0
-12
-10
Input Offset Voltage (mV)
Input Offset Voltage vs Temperature
-50 -10 30 70 110 150
Temperature (°C)
EL5410C Input Offset Voltage Drift
25
VS=±5V
20
15
10
Quantity (Amplifiers)
5
8
10
12
0
1
3
5
7
9
Input Offset Voltage Drift, TCVOS(µV/°C)
Input Bias Current vs Temperature
0.008
0.004
VS=±5V
0
-0.004
Input Bias Current (µA)
-0.008
-0.012
-50 -10 30 70 110 150
Temperature (°C)
Typical
Production
Distortion
11
13
15
17
19
21
Output High Voltage vs Temperature
4.96
4.95
4.94
4.93
Output High Voltage (V)
4.92
4.91
-50 -10 30 70 110 150
Temperature (°C)
VS=±5V
I
OUT
=5mA
Output Low Voltage vs Temperature
-4.85
-4.87
-4.89
-4.91
Output Low Voltage (V)
-4.93
-4.95
VS=±5V
I
=5mA
OUT
-50 -10 30 70 110 150
Temperature (°C)
5
Page 6
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
EL5210C/EL5410C
Open-Loop Gain vs Temperature
90
85
VS=±5V
=1kΩ
R
L
Slew Rate vs Temperature
33.85
33.80
33.75
VS=±5V
80
Open-Loop Gain (dB)
75
70
-50 -10 30 70 110 150
EL5410C Supply Current per Amplifier vs Supply
Voltage
2.9
TA=25°C
2.7
2.5
2.3
2.1
Supply Current (mA)
1.9
1.7
1.5
4
Differential Gain and Phase
0.25
VS=±5V
AV=2
0.15
RL=1kΩ
0.05
Diff Gain (%)
-0.05
0.20
0.10
0
Diff Phase (°)
-0.10
0 100
Temperature (°C)
8 121620
Supply Voltage (V)
IRE
2000 100
200
33.70
33.65
Slew Rate (V/µS)
33.60
33.55
Temperature (°C)
EL5410C Supply Current per Amplifier vs
Temperature
2.7
VS=±5V
2.65
2.6
2.55
2.5
Supply Current (mA)
2.45
2.4
-50 -10 30 70 110 150
Harmonic Distortion vs V
-30
VS=±5V
-40
AV=1
RL=1k
FIN = 1MHz
-50
-60
Distortion (dB)
-70
-80
04 10
Temperature (°C)
OP-P
HD3
268
V
(V)
OP-P
HD2
12080400-40
160
6
Page 7
Typical Performance Curves
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Open Loop Gain and Phase vs Frequency
140
100
60
Gain (dB)
20
VS=±5V
TA=25°C
-20
RL=1kΩ to GND
CL=12pF to GND
-60
100 1k 100k 1M 10M
10 10k 100M
Frequency Response for Various C
20
10
0
-10
RL=1kΩ
AV=1
Magnitude (Normalized) (dB)
-20
VS=±5V
-30
100k
Phase
Frequency (Hz)
1000pF
1M
Frequency (Hz)
Gain
L
10M
100pF
47pF
10pF
100M
250
150
50
-50
-150
-250
Frequency Response for Various R
5
3
1
Phase (°)
0
-1
AV=1
VS=±5V
Magnitude (Normalized) (dB)
-3
CL=12pF
-5
Closed Loop Output Impedance vs Frequency
200
AV=1
VS=±5V
160
T
A
120
80
Output Impedance (Ω)
40
0
10k 100k
1M
Frequency (Hz)
=25°C
Frequency (Hz)
L
10kΩ
1kΩ
560Ω
150Ω
10M100k
1M
100M
30M10M
Maximum Output Swing vs Frequency
10
)
8
P-P
6
VS=±5V
TA=25°C
4
AV=1
RL=1kΩ
Maximum Output Swing (V
CL=12pF
2
Distortion <1%
0
10k 100k
Frequency (Hz)
CMRR vs Frequency
80
70
60
CMRR (dB)
50
VS=±5V
TA=25°C
40
30
1M
10M
10 100 1k 10k 100k 1M 10M 30M
Frequency (Hz)
7
Page 8
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
EL5210C/EL5410C
PSRR (dB)
0.010
0.008
0.006
0.004
THD+ N (%)
0.002
PSRR vs Frequency
80
PSRR+
PSRR-
60
40
VS=±5V
20
TA=25°C
0
1k
10k
100
Total Harmon ic Distortio n + Noise vs Frequency
VS=±5V
RL=1kΩ
A
=1
V
=0.5V
V
IN
0
1k 10k 100k
RMS
100k
Frequency (Hz)
Frequency (Hz)
1M
10M
Input Voltage Noise Spectral Density vs
Frequency
1000
100
10
Voltage Noise (nV√Hz)
1
100 100k 100M
Channel Separation vs Frequency Response
-60
Dual measured Channel A to B
Quad measured Channel A to D or B to C
-80
Other combinations yield improved rejection
-100
XTalk (dB)
-120
VS=±5V
R
=1kΩ
L
-140
AV=1
=110mV
V
IN
-160
1k
Frequency (Hz)
RMS
1M 30M10k 100k
Frequency (Hz)
10M1k 10k 1M
10M
Small-Signal Overshoot vs Load Capacitance
100
VS=±5V
AV=1
80
RL=1kΩ
VIN=±50mV
TA=25°C
60
40
Overshoot (%)
20
0
10 100 1000
Load Capacitance (pF)
Settling Time vs Step Size
5
VS=±5V
4
AV=1
3
RL=1k
CL=12pF
2
TA=25°C
1
0
-1
Step Size (V)
-2
-3
-4
-5
70 21019017015013011090
Settling Time (ns)
0.1%
0.1%
230
8
Page 9
Typical Performance Curves
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Large Signal Transient Response
1V 200ns 50mV 100nS
VS=±5V
TA=25°C
AV=1
RL=1kΩ
CL=12pF
Small Signal Transient Response
VS=±5V
TA=25°C
=1
A
V
R
=1kΩ
L
CL=12pF
9
Page 10
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Pin Descriptions
EL5210C EL5410C Name Function Equivalent Circuit
EL5210C/EL5410C
11V
22V
33V
84V
55V
66V
77V
8V
9V
10 V
411V
12 V
13 V
14 V
Amplifier A Output
OUTA
Amplifier A Inverting Input
INA-
Amplifier A Non-Inverting Input (Reference Circuit 2)
INA+
Positive Power Supply
S+
Amplifier B Non-Inverting Input (Reference Circuit 2)
INB+
Amplifier B Inverting Input (Reference Circuit 2)
INB-
Amplifier B Output (Reference Circuit 1)
OUTB
Amplifier C Output (Reference Circuit 1)
OUTC
Amplifier C Inverting Input (Reference Circuit 2)
INC-
Amplifier C Non-Inverting Input (Reference Circuit 2)
INC+
Negative Power Supply
S-
Amplifier D Non-Inverting Input (Reference Circuit 2)
IND+
Amplifier D Inverting Input (Reference Circuit 2)
IND-
Amplifier D Output (Reference Circuit 1)
OUTD
GND
Circuit 1
Circuit 2
V
S+
V
S-
V
S+
V
S-
10
Page 11
Applications Information
EL5210C/EL5410C
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
Product Description
The EL5210C and EL5410C voltage feedback amplifiers are fabricated using a high voltage CMOS process.
They exhibit Rail-to-Rail input and output capability,
are unity gain stable and have low power consumption
(2.5mA per amplifier). These features make the
EL5210C and EL5410C ideal for a wide range of general-purpose applications. Connected in voltage follower
mode and driving a load of 1kΩ and 12pF, the EL5210C
and EL5410C have a -3dB bandwidth of 30MHz while
maintaining a 33V/µS slew rate. The EL5210C is a dual
amplifier while the EL5410C is a quad amplifier.
Operating Voltage, Input, and Output
The EL5210C and EL5410C are specified with a single
nominal supply voltage from 5V to 15V or a split supply
with its total range from 5V to 15V. Correct operation is
guaranteed for a supply range of 4.5V to 16.5V. Most
EL5210C and EL5410C specifications are stable over
both the full supply range and operating temperatures of
-40 °C to +85 °C. Parameter variations with operating
voltage and/or temperature are shown in the typical performance curves.
The input common-mode voltage range of the EL5210C
and EL5410C extends 500mV beyond the supply rails.
The output swings of the EL5210C and EL5410C typically extend to within 100mV of positive and negative
supply rails with load currents of 5mA. Decreasing load
currents will extend the output voltage range even closer
to the supply rails. Figure 1 shows the input and output
waveforms for the device in the unity-gain configuration. Operation is from +/-5V supply with a 1kΩ load
connected to GND. The input is a 10Vp-p sinusoid. The
output voltage is approximately 9.8V
5V 10µS
5V
P-P
VS=±5V
TA=25°C
AV=1
VIN=10V
.
P-P
Output Input
Figure 1. Operation with Rail-to-Rail Input and
Output
Short Circuit Current Limit
The EL5210C and EL5410C will limit the short circuit
current to +/-120mA if the output is directly shorted to
the positive or the negative supply. If an output is
shorted indefinitely, the power dissipation could easily
increase such that the device may be damaged. Maximum reliability is maintained if the output continuous
current never exceeds +/-30mA. This limit is set by the
design of the internal metal interconnects.
Output Phase Reversal
The EL5210C and EL5410C are immune to phase reversal as long as the input voltage is limited from V
0.5V to V
+ +0.5V. Figure 2 shows a photo of the out-
S
put of the device with the input voltage driven beyond
the supply rails. Although the device's output will not
change phase, the input's overvoltage should be avoided.
If an input voltage exceeds supply voltage by more than
0.6V, electrostatic protection diodes placed in the input
- -
S
11
Page 12
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
stage of the device begin to conduct and overvoltage
damage could occur.
EL5210C/EL5410C
1V
1V
Figure 2. Operation with Beyond-the-Rails
Power Dissipation
With the high-output drive capability of the EL5210C
and EL5410C amplifiers, it is possible to exceed the
125°C 'absolute-maximum junction temperature' under
certain load current conditions. Therefore, it is important
to calculate the maximum junction temperature for the
application to determine if load conditions need to be
modified for the amplifier to remain in the safe operating
area.
The maximum power dissipation allowed in a package is
determined according to:
Input
10µS
VS=±2.5V
TA=25°C
AV=1
VIN=6V
P-P
power supply voltage, plus the power in the IC due to the
loads, or:
P
DMAX
ΣiV[SI
SMAXV(S
+V
OUT
i ) I
LOAD
i×–+×]=
when sourcing, and
P
DMAX
ΣiV[SI
SMAXV(OUTiVS
- ) I
LOAD
i×–+×]=
when sinking.
Where:
i = 1 to 2 for Dual and 1 to 4 for Quad
= Total Supply Voltage
V
S
I
= Maximum Supply Current Per Amplifier
SMAX
V
i = Maximum Output Voltage of the
OUT
Application
I
i = Load current
LOAD
If we set the two P
we can solve for R
equations equal to each other,
DMAX
i to avoid device overheat. Fig-
LOAD
ure 3 and Figure 4 provide a convenient way to see if the
device will overheat. The maximum safe power dissipation can be found graphically, based on the package type
and the ambient temperature. By using the previous
equation, it is a simple matter to see if P
DMAX
exceeds
the device's power derating curves. To ensure proper
operation, it is important to observe the recommended
derating curves shown in Figure 3 and Figure 4.
T
–
P
DMAX
JMAXTAMAX
---------------------------------------------=
Θ
JA
Where:
= Maximum Junction Temperature
T
JMAX
T
= Maximum Ambient Temperature
AMAX
Θ
= Thermal Resistance of the Package
JA
= Maximum Power Dissipation in the
P
DMAX
Package.
The maximum power dissipation actually produced by
an IC is the total quiescent supply current times the total
12
Page 13
Packages Mounted on a JEDEC JESD51-7 High
Effective Thermal Conductivity Test Board
1200
1000
800
600
400
Power Dissipation (mW)
200
0
1.136W
SO8
θJA=110°C/W
MSOP8
θJA=115°C/W
25 75
1.0W
909mW
833mW
50 150
Ambient Temperature (°C)
MAX TJ=125°C
SO14
=88°C/W
θ
JA
θJA=100°C/W
1000
TSSOP14
12585
Figure 3. Package Power Dissipation vs
Ambient Temperature
Packages Mounted on a JEDEC JESD51-3 Low
Effective Thermal Conductivity Test Board
1200
MAX TJ=125°C
1000
625mW
θ
JA
SO14
=120°C/W
TSSOP14
θ
JA
1000 125
85
=165°C/W
θ
JA
SO8
=160°C/W
800
833mW
606mW
600
485mW
400
Power Dissipation (mW)
200
0
MSOP8
θJA=206°C/W
50 150
25 75
Ambient Temperature (°C)
Figure 4. Package Power Dissipation vs
Ambient Temperature
Unused Amplifiers
It is recommended that any unused amplifiers in a dual
and a quad package be configured as a unity gain fol-
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
lower. The inverting input should be directly connected
to the output and the non-inverting input tied to the
ground plane.
Driving Capacitive Loads
The EL5210C and EL5410C can drive a wide range of
capacitive loads. As load capacitance increases, however, the -3dB bandwidth of the device will decrease and
the peaking increase. The amplifiers drive 10pF loads in
parallel with 1kΩ with just 1.2dB of peaking, and 100pF
with 6.5dB of peaking. If less peaking is desired in these
applications, a small series resistor (usually between 5Ω
and 50Ω) can be placed in series with the output. However, this will obviously reduce the gain slightly.
Another method of reducing peaking is to add a "snubber" circuit at the output. A snubber is a shunt load
consisting of a resistor in series with a capacitor. Values
of 150Ω and 10nF are typical. The advantage of a snubber is that it does not draw any DC load current or
reduce the gain
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5210C and EL5410C can provide gain at high
frequency. As with any high-frequency device, good
printed circuit board layout is necessary for optimum
performance. Ground plane construction is highly recommended, lead lengths should be as short as possible
and the power supply pins must be well bypassed to
reduce the risk of oscillation. For normal single supply
operation, where the V
0.1µF ceramic capacitor should be placed from V
pin to V
- pin. A 4.7µF tantalum capacitor should then
S
be connected in parallel, placed in the region of the
amplifier. One 4.7µF capacitor may be used for multiple
devices. This same capacitor combination should be
placed at each supply pin to ground if split supplies are
to be used.
- pin is connected to ground, a
S
S
+ to
EL5210C/EL5410C
13
Page 14
EL5210C/EL5410C
30MHz Rail-to-Rail Input-Output Op Amps
EL5210C/EL5410C
General Disclaimer
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described
herein and makes no representations that they are free from patent infringement.
WARNING - Life Support Policy
Elantec, Inc. products are not authorized for and should not be used
within Life Support Systems without the specific written consent of
Elantec, Inc. Life Support systems are equipment intended to sup-
Elantec Semiconductor, Inc.
675 Trade Zone Blvd.
Milpitas, CA 95035
Telephone: (408) 945-1323
Fax: (408) 945-9305
European Office: +44-118-977-6080
Japan Technical Center: +81-45-682-5820
November 16, 2000
(888) ELANTEC
port or sustain life and whose failure to perform when properly used
in accordance with instructions provided can be reasonably
expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support
Systems are requested to contact Elantec, Inc. factory headquarters
to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective
components and does not cover injury to persons or property or
other consequential damages.
14
Printed in U.S.A.
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