• Stable at gain of 2 and 100MHz
gain_bandwidth product
(EL2211C, EL2311C, &
EL2411C)
• Stable at gain of 1 and 50MHz
gain_bandwidth product
(EL2210C, EL2310C, &
EL2410C)
• 130V/µs slew rate
• Drives 150Ω load to video levels
• Inputs and outputs operate at
negative supply rail
• ±5V or +10V supplies
• -60dB isolation at 4.2MHz
Applications
• Consumer video amplifiers
• Active filters/integrators
• Cost-sensitive applications
• Single supply amplifiers
Ordering Information
Part NoPackageTape & ReelOutline #
EL2210CN8-Pin PDIP-MDP0031
EL2210CS8-Pin SO-MDP0027
EL2210CS-T78-Pin SO7”MDP0027
EL2210CS-T138-Pin SO13”MDP0027
EL2211CN8-Pin PDIP-MDP0031
EL2211CS8-Pin SO-MDP0027
EL2310CN8-Pin PDIP-MDP0031
EL2310CS8-Pin SO-MDP0027
EL2311CN8-Pin PDIP-MDP0031
EL2311CS8-Pin SO-MDP0027
EL2410CN14-Pin PDIP-MDP0031
EL2410CS14-Pin SO-MDP0027
EL2410CS-T714-Pin SO7”MDP0027
EL2410CS-T1314-Pin SO13”MDP0027
EL2411CN14-Pin PDIP-MDP0031
EL2411CS14-Pin SO-MDP0027
General Description
This family of dual, triple, and quad operational amplifiers built using
Elantec's Complementary Bipolar process offers unprecedented high
frequency performance at a very low cost. They are suitable for any
application such as consumer video, where traditional DC performance specifications are of secondary importance to the high
frequency specifications. On ±5V supplies at a gain of +1 the
EL2210C, EL2310C, and EL2410C will drive a 150Ω load to +2V,---
-1V with a bandwidth of 50MHz and a channel-to-channel isolation of
60dB or more. At a gain of +2, the EL2211C, EL2311C, and EL2411C
will drive a 150Ω load to +2V, -1V with a bandwidth of 100MHz with
the same channel-to-channel isolation. All four achieve 0.1dB bandwidth at 5MHz.
The power supply operating range is fixed at ±5V or +10/0V. In single
supply operation the inputs and outputs will operate to ground. Each
amplifier draws only 7mA of supply current.
Connection Diagrams
VS+
IN1+
IN1-
1
OUT
2
IN1-
IN1+
1
NC
2
NC
3
NC
4
5
6
-+
-+- +-+- +
3
4
V-
14
OUT2
13
IN2-
12
IN2+
11
VS-
10
IN3+
9
IN3-
- +
EL2210C/EL2211C
-+
OUT1
IN1-
IN1+
IN2+
IN2-
8
V+
7
OUT2
6
IN2-
5
IN2+
1
2
3
4
V+
5
6
14
OUT4
13
IN4-
-+- +
12
IN4+
11
V-
10
IN3+
9
IN3-
August 6, 2001
7
OUT1
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a “controlled document”. Current revisions, if any, to these
specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the
specified temperature and are pulsed tests, therefore: TJ = TC = TA.
EL2210C, EL2310C, EL2410C - DC Electrical Characteristics
VS = ±5V, R
V
EL2210C/11C, EL2310C/11C, EL2410C/11C
TCV
I
B
I
OS
TCI
A
PSRRPower Supply RejectionVS = ±4.5V to ±5.5V5060dB
= 4 VPP. Full power bandwidth is based on slew rate measurement using: FPBW = SR/(2pi * V
OUT
= 0.4 VPP)AV = +2100MHz
OUT
= 0.4 VPP)AV = +28MHz
OUT
[1]
[2]
[2]
NTSC/PAL0.04%
NTSC/PAL0.15°C
= 150Ω.
L
811MHz
)
peak
EL2210C/11C, EL2310C/11C, EL2410C/11C
5
Page 6
EL2210C/11C, EL2310C/11C, EL2410C/11C
Low Cost, Dual, Triple and Quad Video Op Amps
Simplified Block Diagram
EL2210C/11C, EL2310C/11C, EL2410C/11C
Typical Performance Curves
Package Power Dissipation vs Ambient Temp.
JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board
1.2
1.042W
1
781W
0.8
0.6
0.4
Power Dissipation (W)
0.2
0
025507510012515085
SO8
θJA=160°C/W
SO14
θJA=120°C/W
Ambient Temperature (°C)
Package Power Dissipation vs Ambient Temp.
JEDEC JESD51-3 Low Effective Thermal Conductivity Test Board
1.8
1.54W
1.6
1.4
1.25W
1.2
1
0.8
0.6
Power Dissipation (W)
0.4
0.2
0
PDIP8
θJA=100°C/W
025507510012515085
PDIP14
θJA=81°C/W
Ambient Temperature (°C)
6
Page 7
EL2210C/11C, EL2310C/11C, EL2410C/11C
Application Information
EL2210C/11C, EL2310C/11C, EL2410C/11C
Low Cost, Dual, Triple and Quad Video Op Amps
Product Description
The EL2210C, EL2310C, and EL2410C are dual, triple,
and quad operational amplifiers stable at a gain of 1. The
EL2211C, EL2311C, and EL2411C are dual, triple, and
quad operational amplifiers stable at a gain of 2. All six
are built on Elantec's proprietary complimentary process
and share the same voltage mode feedback topology.
This topology allows them to be used in a variety of
applications where current mode feedback amplifiers are
not appropriate because of restrictions placed on the
feedback elements. These products are especially
designed for applications where high bandwidth and
good video performance characteristics are desired but
the higher cost of more flexible and sophisticated products are prohibitive.
Power Supplies
These amplifiers are designed to work at a supply voltage difference of 10V to 12V. These amplifiers will
work on any combination of ± supplies. All electrical
characteristics are measured with ±5V supplies. Below
9V total supply voltage the amplifiers’ performance will
degrade dramatically. The quiescent current is a direct
function of total supply voltage. With a total supply voltage of 12V the quiescent supply current will increase
from a typical 6.8mA per amplifier to 10mA per
amplifier.
Output Swing vs Load
Please refer to the simplified block diagram. These
amplifiers provide an NPN pull-up transistor output and
a passive 1250Ω pull-down resistor to the most negative
supply. In an application where the load is connected to
VS- the output voltage can swing to within 200mV of
VS-. In split supply applications where the DC load is
connected to ground the negative swing is limited by the
voltage divider formed by the load, the internal 1250Ω
resistor and any external pull-down resistor. If RL were
150Ω then it and the 1250Ω internal resistor limit the
maximum negative swing to
150
---------------------------
V
=
EE
1250150+
Or--0.53V
The negative swing can be increased by adding an external resistor of appropriate value from the output to the
negative supply. The simplified block diagram shows an
820Ω external pull-down resistor. This resistor is in parallel with the internal 1250Ω resistor. This will increase
the negative swing to
150
1250820×
---------------------------÷150+=
1250820+
Or -1.16V
V
EE
Power Dissipation and Loading
Without any load and a 10V supply difference the power
dissipation is 70mW per amplifier. At 12V supply difference this increases to 105mW per amplifier. At 12V
this translates to a junction temperature rise above ambient of 33°C for the dual and 40°C for the quad amplifier.
When the amplifiers provide load current the power dissipation can rapidly rise.
In ±5V operation each output can drive a grounded
150Ω load to more than 2V. This operating condition
will not exceed the maximum junction temperature limit
as long as the ambient temperature is below 85°C, the
device is soldered in place, and the extra pull-down
resistor is 820Ω or more.
If the load is connected to the most negative voltage
(ground in single supply operation) you can easily
exceed the absolute maximum die temperature. For
example the maximum die temperature should be
150°C. At a maximum expected ambient temperature of
85°C, the total allowable power dissipation for the SO8
package would be:
15085–
P
------------------------361mW==
D
160°C/W
At 12V total supply voltage each amplifier draws a maximum of 10mA and dissipates 12V * 10mA = 120mW or
240mW for the dual amplifier. Which leaves 121mW of
increased power due to the load. If the load were 150Ω
connected to the most negative voltage and the maximum voltage out were VS- +1V the load current would
be 6.67mA. Then an extra 146mW ((12V - 1V) *
6.67mA * 2) would be dissipated in the EL2210C or
7
Page 8
EL2210C/11C, EL2310C/11C, EL2410C/11C
Low Cost, Dual, Triple and Quad Video Op Amps
EL2211C. The total dual amplifier power dissipation
would be 146mW + 240mW = 386mW, more than the
maximum 361mW allowed. If the total supply difference were reduced to 10V, the same calculations would
yield 200mW quiescent power dissipation and 120mW
due to loading. This results in a die temperature of
143°C (85°C + 58°C).
In the above example, if the supplies were split ±6V and
the 150Ω loads were connected to ground, the load
induced power dissipation would drop to 66.7mW
(6.67mA * (6 - 1) * 2) and the die temperature would be
below the rated maximum.
Video Performance
EL2210C/11C, EL2310C/11C, EL2410C/11C
Following industry standard practices (see EL2044C
applications section) these six devices exhibit good differential gain (dG) and good differential phase (dP) with
±5V supplies and an external 820Ω resistor to the negative supply, in a gain of 2 configuration. Driving 75Ω
back terminated cables to standard video levels (1.428V
at the amplifier) the EL2210C, EL2310C, and EL2410C
have dG of 0.1% and dP of 0.2°. The EL2211C,
EL2311C, and EL2411C have dG of 0.04% and dP of
0.15°.
Due to the negative swing limitations described above,
inverted video at a gain of 2 is just not practical. If
swings below ground are required then changing the
extra 820Ω resistor to 500Ω will allow reasonable dG
and dP to approximately -0.75mV. The EL2211C,
EL2311C, and EL2411C will achieve approximately
0.1%/0.4° between 0V and -0.75V. Beyond -0.75V dG
and dP get worse by orders of magnitude.
Differential gain and differential phase are fairly con-
stant for all loads above 150Ω. Differential phase
performance will improve by a factor of 3 if the supply
voltage is increased to ±6V.
Printed-Circuit Layout
The EL2210C/EL2211C/EL2310C/EL2311C/
EL2410C/EL2411C are well behaved, and easy to apply
in most applications. However, a few simple techniques
will help assure rapid, high quality results. As with any
high-frequency device, good PCB layout is necessary
for optimum performance. Ground-plane construction is
highly recommended, as is good power supply bypassing. A 0.1µF ceramic capacitor is recommended for
bypassing both supplies. Lead lengths should be as short
as possible, and bypass capacitors should be as close to
the device pins as possible. For good AC performance,
parasitic capacitances should be kept to a minimum at
both inputs and at the output. Resistor values should be
kept under 5kΩ because of the RC time constants associ-
ated with the parasitic capacitance. Metal-film and
carbon resistors are both acceptable, use of wire-wound
resistors is not recommended because of their parasitic
inductance. Similarly, capacitors should be low-inductance for best performance.
Output Drive Capability
None of these devices have short circuit protection. Each
output is capable of more than 100mA into a shorted
output. Care must be used in the design to limit the output current with a series resistor.
Specifications contained in this data sheet are in effect as of the publication date shown. Elantec, Inc. reserves the right to make changes in the circuitry or specifications contained herein at any time without notice. Elantec, Inc. assumes no responsibility for the use of any circuits described
herein and makes no representations that they are free from patent infringement.
WARNING - Life Support Policy
Elantec, Inc. products are not authorized for and should not be used
within Life Support Systems without the specific written consent of
Elantec, Inc. Life Support systems are equipment intended to sup-
Elantec Semiconductor, Inc.
675 Trade Zone Blvd.
Milpitas, CA 95035
Telephone: (408) 945-1323
(888) ELANTEC
Fax:(408) 945-9305
European Office: +44-118-977-6020
Japan Technical Center: +81-45-682-5820
port or sustain life and whose failure to perform when properly used
in accordance with instructions provided can be reasonably
expected to result in significant personal injury or death. Users contemplating application of Elantec, Inc. Products in Life Support
Systems are requested to contact Elantec, Inc. factory headquarters
to establish suitable terms & conditions for these applications. Elantec, Inc.’s warranty is limited to replacement of defective
components and does not cover injury to persons or property or
other consequential damages.
August 6, 2001
12
Printed in U.S.A.
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