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Excelics
EIA/EIB1718-1P
PRELIMINARY DATA SHEET
17.7-18.7GHz, 1W Internally Matched Power FET
• 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHE D T O 5 0 OHM
• EIA FEATURES HIGH PAE( 25 % TYPICAL)
• EIB FEATURES HIGH IP3(43dBm TY PICAL)
• +30.0/ +2 9 . 5 dBm TYPICAL P
EIA/EIB
• 6.5/5.5dB TY PICAL G
1dB
• NON-HERME T IC M E TAL FLANG E PACK AG E
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS
P
1dB
G
1dB
PAE
Id
1dB
IP3
Output Power at 1dB Comp ression f=17.7- 18.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Gain at 1dB Compression f=17.7-18.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Power Added Efficiency at 1dB compression
f=17.7-18.7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
Drain C ur rent at 1dB Compre ssion 440 425 mA
Output 3rd Orde r Intercept Point f=17.7-18. 7GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
OUTPUT POWER FOR
1dB
POWER GAIN FOR EIA/ E IB
EIA1718-1P EIB1718-1P
MIN TYP MAX MIN TYP MAX
29 30.0 29.0 29.5
6.0 6.5 5.0 5.5
37 43* dBm
UNIT
dBm
dB
25 20 %
I
dss
Gm
Vp
BVgd
Rth
Saturat ed Drai n Curre nt Vds=3V, Vgs=0V 550 720 850 550 720 850 mA
Transconductance Vds=3V, Vgs=0V 760 360 mS
Pinch-off Voltage Vds=3V, Ids=6mA -1.0 -2.5 -2.0 -3.5 V
Drain B r eakdown Voltage Igd=2.4mA -13 -15 -15 V
Thermal Resistance (Au-Sn Eutectic Attach ) 16 16
*Typical –45dBc IM3 at Pout=20dBm/Tone
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage 12V 8V
Gate-Source Voltage -8V -3V
Drain Current Idss Idss
Forward Gate Current 90mA 15mA
Input Power 32dBm @ 3dB Compression
Channel Temperature 175oC 150oC
Storage Temperature -65/175oC -65/150oC
Total Power Dissipation 8.5W 7.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. E xceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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C/W
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