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Excelics
EIA/EIB1213-2P
PRELIMINARY DATA SHEET
12.75-13.25GHz, 2W Internally Matched Power FET
• 12.75-13.25GHz BANDWIDTH AND INPUT/ OUTPUT
IMPEDANCE MATCHE D T O 5 0 OHM
• EIA FEATURES HIGH PAE( 30 % TYPICAL)
• EIB FEATURES HIGH IP3(46dBm TYPICAL)
• +33.5/ +3 3 . 0 dBm TYPICAL P
1dB
OUTPUT POWER FOR
EIA/EIB
• 9.5/8.5dB TY PICAL G
1dB
POWER GAIN FOR EIA/ E IB
• NON-HERME T IC M E TAL FLANG E PACK AG E
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1213-2P EIB1213-2P
SYMBOLS PARAMETERS/TEST CONDITIONS
MIN TYP MAX MIN TYP MAX
UNIT
P
1dB
Output Power at 1d B Com pression f=12.75-13.25GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
32.5 33.5 32 33.0
dBm
G
1dB
Gain at 1dB Compression f=12.75-13.25GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
8.5 9.5 7.5 8.5
dB
PAE
Power Added Efficiency at 1dB compression
f=12.75-13.25GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
30 25 %
Id
1dB
Drain Current at 1dB C ompression 880 850 mA
IP3
Output 3rd Orde r Intercept Point f=12.75-13.25GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
40 46* dBm
I
dss
Saturat ed Drain Current Vds=3V, Vgs = 0V 1100 1440 1700 1100 1360 1700 mA
Gm
Transconductance Vds=3V, Vgs=0V 1500 700 mS
Vp
Pinch-off Voltage Vds=3V, Ids=12mA -1.0 -2.5 -2.0 -3.5 V
BVgd
Drain Breakdown Volt a ge Ig d=4.8mA -13 -15 -15 V
Rth
Thermal Resistance (Au-Sn Eutectic A ttach ) 8 8
o
C/W
*Typical –45dBc IM3 at Pout=23dBm/Tone
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage 12V 8V
Vgs
Gate-Source Voltage -8V -3V
Ids
Drain Current Idss Idss
Igsf
Forward Gat e Current 180mA 30mA
Pin
Input Power 32dBm @ 3dB Compression
Tch
Channel Temperature 175oC 150oC
Tstg
Storage Temperature -65/175oC -65/150oC
Pt
Total Power Dissipation 17W 14.2W
Note: 1. Ex ceedin g an y of the above ratings may result in permanent damage.
2. E xceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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