Datasheet EIA1415B-8P Datasheet (Excelics)

Excelics EIA1415B-8P

PRELIMINARY DATA SHEET 14.9-15.1 GHz: 8Watt

Internally Matched Power FET

•• 14.9-15.1GHz BANDWIDTH AND INPUT/OUTPUT

IMPEDANCE MATCHED TO 50 OHM

•• HIGH PAE( 20% TYPICAL)

•• +39dBm TYPICAL P

•• 6dB TYPICAL G

•• NON-HERMETIC METAL FLANGE PACKAGE

ELECTRICAL CHARACTERISTICS (Ta = 25 OC)

OUTPUT POWER

1dB

POWER GAIN

1dB

SYMBOLS PARAMETERS/TEST CONDITIONS

P

1dB

G

1dB

PAE
Id

1dB

IP3
Idss

Gm
Vp
BVgd
Rth

Output Power at 1dB Compression f=14.9-15.1GHz
Vds=8V, Idsq=0.5 Idss

Gain at 1dB Compression f=14.9-15.1GHz
Vds=8V, Idsq=0.5 Idss

Power Added Efficiency at 1dB compression
f=14.9-15.1GHz Vds=8V, Idsq=0.5 Idss

Drain Current at 1dB Compression 3520 mA
Output 3rd Order Intercept Point f=14.9-15.1GHz

Vds=8V, Idsq=0.5 Idss
Saturated Drain Current Vds=3V, Vgs=0V 4400 5760 6800 mA

Transconductance Vds=3V, Vgs=0V 6000 mS

Pinch-off Voltage Vds=3V, Ids=48mA -1.0 -2.5 V

Drain Breakdown Voltage Igd=19.2mA -13 -15 V

Thermal Resistance (Au-Sn Eutectic Attach) 2.3

EIA1415B-8P

MIN TYP MAX

38 39

5.5 6.5

20 %

dBm

MAXIMUM RATINGS AT 25OC

SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2

Vds
Vgs

Ids

Igsf

Pin

Tch

Tstg

Pt

Drain-Source Voltage 12V 8V
Gate-Source Voltage -8V -3V
Drain Current Idss 6240mA
Forward Gate Current 720mA 120mA
Input Power 38dBm @ 3dB Compression
Channel Temperature 175oC 150oC
Storage Temperature -65/175oC -65/150oC
Total Power Dissipation 60W 50W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: [phone] Fax: [phone] Web Site: www.excelics.com

UNIT

dBm

dB

o

C/W