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Excelics EIA1415A-4P
PRELIMINARY DATA SHEET 14.0-15.35 GHz: 4Watt
Internally Matched Power FET
•• 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
•• HIGH PAE( 25% TYPICAL)
•• +36.0dBm TYPICAL P
•• 7/6dB TYPICAL G
•• NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
OUTPUT POWER
1dB
POWER GAIN
1dB
SYMBOLS PARAMETERS/TEST CONDITIONS
P
1dB
G
1dB
PAE
Id
1dB
IP3
Idss
Gm
Vp
BVgd
Rth
Output Power at 1dB Compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Power Added Efficiency at 1dB compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Drain Current at 1dB Compression 1800 mA
Output 3rd Order Intercept Point
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Saturated Drain Current Vds=3V, Vgs=0V 2200 2880 3400 mA
Transconductance Vds=3V, Vgs=0V 3000 mS
Pinch-off Voltage Vds=3V, Ids=24mA -1.0 -2.5 V
Drain Breakdown Voltage Igd=9.6mA -13 -15 V
Thermal Resistance (Au-Sn Eutectic Attach) 4.5
EIA1415-4P
MIN TYP MAX
35.0 36.0
6 7
25
43 dBm
%
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage 12V 8V
Gate-Source Voltage -8V -3V
Drain Current Idss 3120mA
Forward Gate Current 360mA 60mA
Input Power 35dBm @ 3dB Compression
Channel Temperature 175oC 150oC
Storage Temperature -65/175oC -65/150oC
Total Power Dissipation 30W 25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
UNIT
dBm
dB
o
C/W
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