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Excelics EIA1415A-2P
PRELIMINARY DATA SHEET 14.0-15.35 GHz: 2Watt
Internally Matched Power FET
•• 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
•• HIGH PAE( 25% TYPICAL)
•• +33.0 TYPICAL P
•• 7.5dB TYPICAL G
•• NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
OUTPUT POWER
1dB
POWER GAIN
1dB
SYMBOLS PARAMETERS/TEST CONDITIONS
P
1dB
G
1dB
PAE
Id
1dB
IP3
Idss
Gm
Vp
BVgd
Rth
Output Power at 1dB Compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Power Added Efficiency at 1dB compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Drain Current at 1dB Compression 900 mA
Output 3rd Order Intercept Point
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Saturated Drain Current Vds=3V, Vgs=0V 1100 1440 1700 mA
Transconductance Vds=3V, Vgs=0V 1500 mS
Pinch-off Voltage Vds=3V, Ids=12mA -1.0 -2.5 V
Drain Breakdown Voltage Igd=4.8mA -13 -15 V
Thermal Resistance (Au-Sn Eutectic Attach) 8
EIA1415-2P
MIN TYP MAX
32.0 33.0
6.5 7.5
25
40 dBm
%
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Drain-Source Voltage 12V 8V
Gate-Source Voltage -8V -3V
Drain Current Idss Idss
Forward Gate Current 180mA 30mA
Input Power 32dBm @ 3dB Compression
Channel Temperature 175oC 150oC
Storage Temperature -65/175oC -65/150oC
Total Power Dissipation 17W 14.2W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
UNIT
dBm
dB
o
C/W
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