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Excelics
EIA/EIB1415-4P
PRELIMINARY DATA SHEET
14.40-15.35GHz, 4W Internally Matched Power FET
• 14.40-15.35GHz BANDWIDTH AND INPUT/ OUTPUT
IMPEDANCE MATCHE D T O 5 0 OHM
• EIA FEATURES HIGH PAE( 27 % TYPICAL)
• EIB FEATURES HIGH IP3(49dBm TYPICAL)
• +36.0/ +3 5 . 5 dBm TYPICAL P
1dB
OUTPUT POWER FOR
EIA/EIB
• 8/7dB T YPICAL G
1dB
POWER GAIN FOR EIA/ E IB
• NON-HERME T IC M E TAL FLANG E PACK AG E
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
EIA1415-4P EIB1415-4P
SYMBOLS PARAMETERS/TEST CONDITIONS
MIN TYP MAX MIN TYP MAX
UNIT
P
1dB
Output Power at 1dB C ompr ession f=14.40- 15.35GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
35.5 36.0 35 35.5
dBm
G
1dB
Gain at 1dB Compression f=14.40-15.35GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
7 8 6 7
dB
PAE
Power Added Efficiency at 1dB compression
f=14.40-15.35GHz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
27 22 %
Id
1dB
Drain Current at 1dB Co mpre ssion 1760 1700 mA
IP3
Output 3rd Orde r Intercept Point f=14.40-15. 35G Hz
Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB)
43 49* dBm
I
dss
Saturat ed Drai n Curre nt Vds=3V, Vgs=0V 2200 2880 3400 2200 2720 3400 mA
Gm
Transconductance Vds=3V, Vgs=0V 3000 1400 mS
Vp
Pinch-off Voltage Vds=3V, Ids=24mA -1.0 -2.5 - 2.0 -3.5 V
BVgd
Drain Breakdo wn Voltage Igd =9.6mA -13 -15 -15 V
Rth
Thermal Resistance (Au-Sn Eutectic Attach ) 4.5 4.5
o
C/W
*Typical –45dBc IM3 at Pout=26dBm/Tone
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage 12V 8V
Vgs
Gate-Source Voltage -8V -3V
Ids
Drain Current Idss 3120mA
Igsf
Forward Gate Current 360mA 60mA
Pin
Input Power 35dBm @ 3dB Compression
Tch
Channel Temperature 175oC 150oC
Tstg
Storage Temperature -65/175oC -65/150oC
Pt
Total Power Dissipation 30W 25W
Note: 1. Ex ceedin g an y of the above ratings may result in permanent damage.
2. E xceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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