
EGP10A - EGP10K
EGP10A-EGP10K
Discrete POWER & Signal
Technologies
Features
• Superfast recovery time for high
efficiency.
• Low forward voltage, high current
capability.
• Low leakage current.
• High surge current capability.
COLOR BAND DENOTES CATHODE
DO-41
1.0 min (25.4)
Dimens i o ns in
inches (mm)
0.205 (5.21)
0.160 (4.06)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings* T
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
T
stg
T
J
Ave rage Rectified Curren t
.375 " lead length @ T
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimp osed on rated load (JEDEC method)
Total De vice Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 50
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +150
= 25°C unless otherwise noted
A
= 55°C
L
1.0 A
30 A
2.5
17
mW/°C
C/W
°
W
C
°
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics T
= 25°C unless otherwise noted
A
Parameter Device Units
10A 10B 10C 10D 10F 10G 10J 10K
Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
TA = 25°C
T
= 125°C
A
Maximum Rev erse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
F
= 0.25 A
rr
Max imum Forwa rd Voltage @ 1.0 A 0.95 1.25 1.7 V
Typical Junction Capacitance
V
= 4.0 V, f = 1.0 MHz
R
1999 Fairchild Semiconductor Corporation
50 100 150 200 300 400 600 800 V
5.0
100
50 75 nS
22 15 pF
EPG10A - EPG10K, Rev. A
A
µ
A
µ

T ypical Characteristics
EGP10A-EGP10K
Forward Curre nt De rating Curve
1
0.75
SINGLE PHASE
0.5
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
0.25
.375" (9.0mm) LEAD
FORWARD CURRENT (A)
LENGTHS
0
25 50 75 100 125 150 175
LEAD TEMPER ATURE ( C)
º
Forward Charac t eristics
50
º
T = 150 C
10
EGP10A-EGP10D
1
0.1
FORWARD CURR ENT (A)
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
A
EGP10F-EGP10K
Pulse Wi dth = 30 0µs
2% Duty Cycle
FORWARD VOLTAGE (V)
T = 25 C
Non-Repetitive Surge Current
30
25
20
15
10
5
0
PEA K F OR WARD SU R G E CUR REN T (A)
1 2 5 10 20 50 100
NUMBER OF CYCLES AT 60Hz
Reverse Char act e ri s tics
1000
100
µ
T = 125 C
º
º
A
10
1
0.1
REVERSE CURRENT ( A)
0.01
0 20406080100120140
PERCE NT OF RATED PEAK RE VERSE VOL TAGE (%)
A
T = 100 C
º
A
º
T = 25 C
A
Junction Capacitance
60
50
40
30
20
CAPACITANCE (pF)
EGP10F-EGP10K
10
0
0.1 1 10 100 1000
50
Ω
NONINDUCTIVE
50V
(approx)
Ω
50
NONINDUCTIVE
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Ω
50
NONINDUCTIVE
DUT
OSCILLOSCOPE
(Note 1)
REVERSE VOLTAGE (V)
(-)
Pulse
Generator
(Note 2)
(+)
Reverse Recovery Time Characterstic and Test Circuit Diagram
EGP10A-EGP10D
+0.5A
0
-0.25A
-1.0A
1.0cm SET TIME BASE FOR
trr
5/ 10 ns/ cm
EPG10A - EPG10K, Rev. A

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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.