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Excelics
EFC240D
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
+31.0dBm TYPICAL OUTPUT POWER
•
18.5dB TYPICAL POWER GAIN AT 2GHz
•
HIGH BVgd FOR 10V BIAS
•
0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE
•
PASSIVATION
Si
•
3N4
ADVANCED EPITAXIAL DOPING PROFILE
•
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 40mA PER BIN RANGE
•
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
Output Power at 1dB Compression f= 2GHz
Vds=10V, Ids=50% Idss f= 4 GHz
Gain at 1dB Compression f= 2GHz
Vds=10V, Ids=50% Idss f= 4GHz
Power Added Efficiency at 1dB Compression
Vds=10V, Ids=50% Idss f=2GHz
75
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
29.0 31.0
16.0 18.5
410
104
D
G
SS
100
94
31.0
13.5
45
72
155
620
dBm
dB
%
Idss
Gm
Vp
BVgd
BVgs
Rth
Saturated Drain Current Vds=3V, Vgs=0V 320 480 720 mA
Transconductance Vds=3V, Vgs=0V 200 280 mS
Pinch-off Voltage Vds=3V, Ids=6mA -2.5 -4.0 V
Drain Breakdown Voltage Igd=2.4mA -15 -20 V
Source Breakdown Voltage Igs=2.4mA -10 -17 V
Thermal Resistance (Au-Sn Eutectic Attach) 23
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
14V
-8V
Idss
60mA
29dBm
175oC
-65/175oC
6.0W
10V
-4.5V
500mA
10mA
@ 3dB Compression
150oC
-65/150oC
5.0W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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C/W
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EFC240D
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
10V, 1/2 Idss
Freq S11 S11 S21 S21 S12 S12 S22 S22
GHz Mag Ang Mag Ang Mag Ang Mag Ang
0.500 0.962 -66.3 11.912 141.2 0.025 55.9 0.239 -129.1
1.000 0.933 -106.1 8.577 117.9 0.036 36.9 0.337 -144.0
1.500 0.859 -121.0 6.591 108.2 0.042 32.6 0.303 -146.3
2.000 0.860 -136.6 5.272 97.9 0.044 26.7 0.330 -151.9
2.500 0.849 -147.5 4.344 89.7 0.046 22.6 0.343 -155.1
3.000 0.848 -155.8 3.689 82.9 0.047 20.8 0.354 -157.6
3.500 0.846 -162.2 3.195 76.9 0.047 19.4 0.365 -159.4
4.000 0.846 -167.3 2.809 71.5 0.048 18.7 0.373 -160.6
4.500 0.849 -172.0 2.472 66.5 0.047 18.7 0.389 -162.9
5.000 0.856 -176.1 2.229 61.8 0.048 18.6 0.399 -163.5
5.500 0.853 -179.3 2.024 57.2 0.048 18.8 0.411 -164.5
6.000 0.855 177.4 1.852 52.9 0.048 20.4 0.422 -165.6
6.500 0.857 174.4 1.708 48.7 0.048 19.7 0.434 -165.8
7.000 0.861 171.7 1.577 44.8 0.049 20.7 0.444 -166.5
7.500 0.861 169.3 1.466 41.0 0.049 20.7 0.457 -167.7
8.000 0.865 167.0 1.375 37.2 0.049 21.7 0.468 -168.4
8.500 0.869 165.2 1.288 33.7 0.050 22.1 0.477 -169.7
9.000 0.873 163.5 1.213 30.1 0.050 24.0 0.487 -171.2
9.500 0.877 161.9 1.146 26.8 0.052 24.7 0.500 -172.4
10.000 0.876 160.4 1.085 23.3 0.053 25.4 0.509 -174.2
1 gate wires, 20 mils each; 2 drain wires, 12 mils each; 4 source wires, 7 mils each.
Note: The data included 0.7 mils diameter Au bonding wires:
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