Page 1
Excelics
EFC240B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
+31.0dBm TYPICAL OUTPUT POWER
•
8.5dB TYPICAL POWER GAIN AT 12GHz
•
HIGH BVgd FOR 10V BIAS
•
0.3 X 2400 MICRON RECESSED
•
“MUSHROOM” GATE
PASSIVATION
Si
•
3N4
ADVANCED EPITAXIAL DOPING PROFILE
•
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 40mA PER BIN RANGE
•
40
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
Output Power at 1dB Compression f=12GHz
Vds=10V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=10V, Ids=50% Idss f=18GHz
Power Added Efficiency at 1dB compression
Vds=10V, Ids=50% Idss f=12GHz
D
S
G
95
120
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
29.0 31.0
7.0 8.5
960
156
50
DDD
GG
50
31.0
6.0
33 %
G
SSS
dBm
dB
48
350
100
S
Idss
Gm
Vp
BVgd
BVgs
Rth
Saturated Drain Current Vds=3V, Vgs=0V 320 520 720 mA
Transconductance Vds=3V, Vgs=0V 200 280 mS
Pinch-off Voltage Vds=3V, Ids=6mA -2.5 -4.0 V
Drain Breakdown Voltage Igd=2.4mA -15 -20 V
Source Breakdown Voltage Igs=2.4mA -10 -17 V
Thermal Resistance (Au-Sn Eutectic Attach) 20
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
14V
-8V
Idss
60mA
29dBm
175oC
-65/175oC
6.8 W
10V
-4.5V
570mA
10mA
@ 3dB Compression
150oC
-65/150oC
5.7 W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
o
C/W
Page 2
EFC240B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
10V, 1/2 Idss
Freq S11 S11 S21 S21 S12 S12 S22 S22
GHz Mag Ang Mag Ang Mag Ang Mag Ang
1.000 0.944 -86.7 7.064 130.8 0.041 41.9 0.296 -132.9
2.000 0.915 -125.9 4.551 104.6 0.052 22.7 0.374 -146.8
3.000 0.907 -144.8 3.217 89.3 0.055 13.2 0.409 -152.2
4.000 0.907 -155.6 2.450 78.1 0.054 6.7 0.433 -154.1
5.000 0.912 -161.6 1.929 69.0 0.052 2.7 0.460 -157.6
6.000 0.911 -166.1 1.596 60.9 0.050 0.1 0.487 -158.3
7.000 0.920 -169.0 1.362 54.1 0.049 -2.2 0.512 -159.2
8.000 0.915 -171.1 1.181 47.7 0.047 -3.4 0.549 -161.0
9.000 0.919 -173.3 1.040 41.7 0.045 -4.5 0.586 -161.9
10.000 0.922 -176.1 0.922 35.7 0.041 -5.2 0.620 -162.0
11.000 0.925 -179.2 0.826 30.0 0.041 -6.2 0.647 -162.2
12.000 0.932 178.8 0.747 24.7 0.039 -7.5 0.673 -163.2
13.000 0.933 177.0 0.681 19.1 0.037 -7.5 0.690 -165.6
14.000 0.939 175.4 0.622 13.8 0.035 -7.7 0.716 -168.5
15.000 0.941 172.9 0.569 8.5 0.035 -7.0 0.739 -170.1
16.000 0.945 170.6 0.522 3.0 0.035 -6.4 0.752 -172.8
17.000 0.946 169.7 0.483 -2.1 0.035 -7.5 0.764 -177.3
18.000 0.952 170.3 0.452 -7.0 0.034 -6.2 0.776 176.4
19.000 0.955 170.4 0.421 -12.7 0.034 -6.5 0.791 169.8
20.000 0.955 168.7 0.387 -18.0 0.035 -3.8 0.813 164.9
21.000 0.954 160.5 0.359 -23.1 0.034 -5.3 0.835 168.3
22.000 0.948 158.1 0.327 -26.7 0.035 -2.1 0.847 166.2
23.000 0.958 157.0 0.303 -30.7 0.035 0.6 0.870 163.7
24.000 0.956 156.1 0.275 -33.9 0.036 2.9 0.876 162.1
25.000 0.961 155.3 0.251 -36.4 0.038 7.7 0.887 160.5
26.000 0.954 153.5 0.232 -39.0 0.036 10.4 0.897 160.1
Note: The data included 0.7 mils diameter Au bonding wires:
4 gate wires, 15 mils each; 4 drain wires, 20 mils each; 10 source wires, 7 mils each.
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