Page 1
Excelics
EFC120B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
+28.0dBm TYPICAL OUTPUT POWER
•
9.5dB TYPICAL POWER GAIN AT 12GHz
•
HIGH BVgd FOR 10V BIAS
•
0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
•
PASSIVATION
Si
•
3N4
ADVANCED EPITAXIAL DOPING PROFILE
•
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 20mA PER BIN RANGE
•
S
40
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
P
1dB
G
1dB
PAE
Output Power at 1dB Compression f=12GHz
Vds=10V, Ids=50% Idss f=18GHz
Gain at 1dB Compression f=12GHz
Vds=10V, Ids=50% Idss f=18GHz
Power Added Efficiency at 1dB Compression
Vds=10V, Ids=50% Idss f=12GHz
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
26.0 28.0
7.5 9.5
33 %
550
156
50
DD
G
50 12095
28.0
7.0
S
S
G
dBm
48
350
100
dB
Idss
Gm
Vp
BVgd
BVgs
Rth
Saturated Drain Current Vds=3V, Vgs=0V 160 260 360 mA
Transconductance Vds=3V, Vgs=0V 100 140 mS
Pinch-off Voltage Vds=3V, Ids=3.0 mA -2.5 -4.0 V
Drain Breakdown Voltage Igd=1.2mA -15 -20 V
Source Breakdown Voltage Igs=1.2mA -10 -17 V
Thermal Resistance (Au-Sn Eutectic Attach) 40
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igsf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Drain-Source Vo ltage
Gate-Source Voltage
Drain Current
Forward Gate Current
Input Power
Channel Temperature
Storage Temperature
Total Power Dissipation
14V
-8V
Idss
30mA
26dBm
175oC
-65/175oC
3.4W
10V
-4.5V
285mA
5mA
@ 3dB Compression
150oC
-65/150oC
2.8W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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C/W
Page 2
EFC120B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
10V, 1/2 Idss
Freq S11 S11 S21 S21 S12 S12 S22 S22
GHz Mag Ang Mag Ang Mag Ang Mag Ang
1.000 0.970 -47.8 6.538 148.7 0.034 62.7 0.293 -35.9
2.000 0.928 -83.3 5.302 125.7 0.056 44.8 0.284 -63.5
3.000 0.899 -108.1 4.250 108.6 0.067 31.7 0.281 -83.1
4.000 0.884 -125.3 3.482 95.4 0.072 22.4 0.290 -95.4
5.000 0.876 -138.0 2.884 84.1 0.073 15.7 0.296 -107.6
6.000 0.868 -147.5 2.462 74.5 0.073 11.0 0.323 -114.8
7.000 0.871 -155.2 2.141 66.3 0.073 6.4 0.354 -119.3
8.000 0.866 -161.2 1.889 58.7 0.072 3.1 0.384 -123.7
9.000 0.868 -166.6 1.681 51.6 0.070 0.3 0.415 -127.2
10.000 0.871 -171.5 1.516 44.7 0.068 -2.2 0.445 -130.5
11.000 0.874 -176.7 1.380 38.1 0.066 -4.5 0.475 -134.0
12.000 0.878 179.1 1.263 31.7 0.064 -6.4 0.507 -137.2
13.000 0.878 175.3 1.159 25.4 0.063 -8.0 0.532 -140.6
14.000 0.884 172.1 1.074 19.5 0.062 -8.3 0.561 -144.4
15.000 0.885 168.4 0.992 13.5 0.060 -9.9 0.581 -148.3
16.000 0.890 164.3 0.926 6.6 0.059 -11.4 0.599 -152.8
17.000 0.890 160.9 0.862 0.5 0.059 -13.3 0.621 -158.4
18.000 0.895 158.2 0.807 -5.3 0.059 -14.0 0.644 -163.6
19.000 0.898 155.5 0.754 -11.4 0.058 -14.0 0.662 -168.7
20.000 0.905 152.1 0.703 -17.3 0.058 -13.8 0.676 -173.6
21.000 0.911 143.9 0.647 -23.3 0.056 -14.3 0.699 -172.1
22.000 0.912 141.1 0.595 -28.0 0.056 -13.1 0.713 -177.2
23.000 0.922 139.7 0.549 -33.2 0.055 -13.0 0.748 178.7
24.000 0.919 138.2 0.505 -36.9 0.054 -10.6 0.765 176.4
25.000 0.923 137.3 0.460 -40.3 0.054 -6.3 0.787 173.6
26.000 0.930 135.8 0.442 -44.3 0.056 -3.4 0.799 171.0
Note: The data included 0.7 mils diameter Au bonding wires:
2 gate wires, 15 mils each; 2 drain wires, 20 mils each; 6 source wires, 7 mils each.
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