Datasheet EDI9F416128LP85BNC, EDI9F416128LP70BNC, EDI9F416128LP100BNC, EDI9F416128C85BNC, EDI9F416128C100BNC Datasheet (White Electronic Designs)
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White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
Aug. 2002 Rev. 2A
ECO #15521
EDI9F416128C
FEATURES
n 4x128Kx16 bit CMOS Static
n Random Access Memory
Access Times 70 thru 100ns
Data Retention Function (EDI9F416128LP )
TTL Compatible Inputs and Outputs
Fully Static, No Clocks
n High Density Packaging
80 Pin SIMM, No. 318
n Single +5V (±10%) Supply Operation
4x128Kx16 Static RAM CMOS, Module
The EDI9F416128C is a 8192K bit CMOS Static RAM based on
eight 128Kx8 Static RAMs mounted on a multi-layered epoxy
laminate (FR-4) substrate.
A low power version with data retention (EDI9F416128LP) is also
available.
All inputs and outputs are TTL compatible and operate from a
single +5V supply. Fully asynchronous, the EDI9F416128C
requires no clocks or refreshing for operation.
PIN CONFIGURATIONS AND BLOCK DIAGRAM
DESCRIPTION
PIN NAMES
AØ-A16 Address Inputs
EØ-E3 Chip Enable
G Output Enables
WH-WL Write Enables
E Chip Select
DQØ-DQ15 Data Input/Output
VCC Supply 5 Volts
VSS Ground
NC No Connect
FIG. 1
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White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
Aug. 2002 Rev. 2A
ECO #15521
EDI9F416128C
ABSOLUTE MAXIMUM RATINGS*
RECOMMENDED DC OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
(f=1.0MHz, VIN=VCC or VSS)
AC TEST CONDITIONS
*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions greater than those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)
TRUTH TABLE
CAPACITANCE
Voltage on any pin relative to VSS -0.5V to 7.0V
Operating Temperature TA (Ambient)
Commercial 0°C to +70°C
Industrial -40°C to +85°C
Storage Temperature
Plastic -55°C to +125°C
Power Dissipation 1 Watt
Output Current. 20 mA
Parameter Sym Min Typ Max Units
Supply Voltage VCC 4.5 5.0 5.5 V
Supply Voltage VSS 0 0 0 V
Input High Voltage VIH 2.2 -- 6.0 V
Input Low Voltage VIL -0.3 -- 0.8 V
Input Pulse Levels VSS to 3.0V
Input Rise and Fall Times 5ns
Input and Output Timing Levels 1.5V
Output Load 70ns 1TTL = 30pF
85-120ns 1TTL, CL =100pF
Parameter Sym Conditions Min Typ Max Units
Operating Power ICC1 W, E = VIL, II/O = 0mA, -- 94 158 mA
Supply Current Min Cycle
Standby (TTL) Power ICC2 E ³ VIH, VIN £ VIL -- 56 120 mA
Supply Current VIN ³ VIH
Full Standby Power ICC3 E ³ VCC-0.2V C -- 24 mA
Supply Current VIN ³ VCC-0.2V or LP -- 80 µA
CMOS VIN £ 0.2V
Input Leakage Current ILI VIN = 0V to VCC -- -- ±10 µA
Output Leakage Current ILO V I/O = 0V to VCC -- -- ±10 µA
Output High Voltage VOH IOH = -1.0mA 2.4 -- -- V
Output Low Voltage VOL IOL = 2.1mA -- -- 0.4 V
G E W Mode Output Power
X H X Standby High Z ICC2, ICC3
H L H Output Deselect High Z ICC1
L L H Read DOUT ICC1
X L L Write DIN ICC1
Parameter Sym Max Unit
Address Lines CI 60 pF
Data Lines CD/Q 80 pF
Chip Enable Line CC 15 pF
Write and Output Enable Lines CW 60 pF
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White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
Aug. 2002 Rev. 2A
ECO #15521
EDI9F416128C
AC CHARACTERISTICS READ CYCLE
READ CYCLE 1 - W HIGH, G, E LOW
READ CYCLE 2 - W HIGH
Symbol 70ns 85ns 100ns
Parameter JEDEC Alt. Min Max Min Max Min Max Units
Read Cycle Time TAVAV TRC 70 85 100 ns
Address Access Time TAVQV TAA 70 85 100 ns
Chip Enable Access Time TELQV TACS 70 85 100 ns
Chip Enable to Output in Low Z (1) TELQX TCLZ 5 5 5 ns
Chip Disable to Output in High Z (1) TEHQZ TCHZ 30 35 40 ns
Output Hold from Address Change TAVQX TOH 3 3 3 ns
Output Enable to Output Valid TGLQV TOE 40 45 50 ns
Output Enable to Output in Low Z (1) TGLQX TOLZ 0 0 0 ns
Output Disable to Output in High Z(1) TGHQZ TOHZ 30 35 40 ns
FIG. 2
FIG. 3
ADDRESS 1
ADDRESS 2
TAVAV
DATA 1
DATA 2
TAVQV
TAVQX
9F416128C Rd Cyc1
A
Q
TGHQZ
TELQV
TELQX
E
G
Q
TEHQZ
A
TAVA V
TGLQV
TGLQX
TAVQV
9F416128C Rd Cyc2
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White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
Aug. 2002 Rev. 2A
ECO #15521
EDI9F416128C
Note 1: Parameter guaranteed, but not tested. *Advance Information
WRITE CYCLE 1 - W CONTROLLED
AC CHARACTERISTICS WRITE CYCLE
Symbol 70ns 85ns 100ns
Parameter JEDEC Alt. Min Max Min Max Min Max Units
Write Cycle Time TAVAV TW C 7 0 85 10 0 ns
Chip Enable to End of Write TELWH TCW 65 70 80 ns
TELEH TCW 65 70 80 ns
Address Setup Time TAVWL TAS 0 0 0 ns
TAVE L TA S 0 0 0 n s
Address Valid to End of Write TAVWH TAW 65 70 80 ns
TAV EH TA W 65 70 80 ns
Write Pulse Width TWLWH TWP 65 70 80 ns
TWLEH TWP 65 70 80 ns
Write Recovery Time TWHAX TWR 0 0 0 ns
TEHAX TWR 0 0 0 ns
Data Hold Time TWHDX TDH 0 0 0 ns
TEHDX TDH 0 0 0 ns
Write to Output in High Z (1) TWLQZ TWHZ 0 30 0 35 0 40 ns
Data to Write Time TDVWH TDW 30 35 40 ns
TDVEH TDW 30 35 40 ns
Output Active from End of Write (1) TWHQX TWLZ 5 5 5 ns
FIG. 4
E
A
TAVAV
TELWH
TAVWH
TWLWH
TAVWL
TWHAX
W
HIGH Z
DATA VALID
TWLQZ
TWHQX
TDVWH TWHDX
Q
D
9F416128C Write Cyc1
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White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
Aug. 2002 Rev. 2A
ECO #15521
EDI9F416128C
DATA RETENTION - E CONTROLLED
DATA RETENTION CHARACTERISTICS
WRITE CYCLE 2 - E CONTROLLED
FIG. 6
Characteristic Sym Test Conditions VDD Min Typ Max Unit
Data Retention Voltage VDD VDD = 0.2V 2 -- V
Data Retention Quiescent Current ICCDR E VDD -0.2V 2V -- 1 6 µA
VIN VDD -0.2V 3V -- 1 8 µA
Chip Disable to Data Retention Time(1) TCDR or VIN 0.2V 0 -- -- ns
Operation Recovery Time (1) TR 5 -- -- ms
FIG. 5
A
TAVEL
HIGH Z
TAVAV
9F416128C Write Cyc2
TELEH
E
TAVEH TEHAX
W
TWLEH
TEHDXTDVEH
Q
DATA VALID
D
VCC
TR
9F416128C Data Retent.
DATA RETENTION MODE
E
TCDR
E ≥ VDD-0.2V
VDD
4.5V 4.5V
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White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
Aug. 2002 Rev. 2A
ECO #15521
EDI9F416128C
PACKAGE NO. 318: 80 LEAD SIMM ANGLED
PACKAGE DESCRIPTION
ORDERING INFORMATION
Part Number Speed Package
(ns) No.
Standard Power
EDI9F416128C70BNC 70 318
EDI9F416128C85BNC 85 318
EDI9F416128C100BNC 100 318
Low Power
EDI9F416128LP70BNC 70 318
EDI9F416128LP85BNC 85 318
EDI9F416128LP100BNC 100 318
Note: To order an Industrial grade product substitute the letter C in the Suffix with
the letter I, eg. EDI9F416128C70BNC becomes EDI9F416128C70BNI.
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