Datasheet ECG787 Specification

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NTE787
Integrated Circuit
AM Receiver Subsystem
16Lead DIP Type Package
For Applications in a variety of AM broadcast and communications receivers and applications
requiring an array of amplifiers.
Description:
The NTE787, a monolithic integrated circuit, is an AM subsystem that provides the converter, IF ampli­fier, detector, and audio preamplifier stages for an AM receiver. It also provides internal AGC for the first IF amplifier stage, delayed AGC for an optional external RF amplifier, a buffer stage to drive a tuning meter, and terminals facilitating the optional use of a tone control.
This device features four independent transistor amplifiers, each incorporating internal biasing for temperature tracking. These amplifiers are particularly useful in generalpurpose amplifier, oscillator, and detector applications in a wide variety of equipment designs.
The NTE787 utilizes a 16Lead DIP package and operates over an ambient temperature range of
40 to +85C.
Features:
D Excellent overload characteristics D AGC for IF amplifier D Buffered output signal for tuning meter D Internal Zener diode provides voltage regulation D Two IF amplifiers stages D Lownoise converter and first IF amplifier D Low harmonic distortion (THD) D Delayed AGC for RF amplifier D Terminals for optional inclusion of tone control D Operates from wide range of power supplies: V+ = 6 to 16 volts D Optional AC and/or DC feedback on wideband amplifier D Array of amplifiers for generalpurpose applications D Suitable for use with optional external RF stage, either MOS or bipolar
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Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
DC Supply Voltage (Across Pin5 and Pin3, Pin6, Pin13, Pin16 respectively) 16V................
DC Current
At Pin3, Pin6, Pin13, Pin16 respectively 10mA.......................................
At Pin10 30mA..................................................................
Device Dissipation (Up to T
Derate Above T
A
Operating Ambient Temperature Range, T Storage Temperature Range, T
= +50C), P
A
D
= +50C 7.6mW/C...............................................
opr
stg
Lead Temperature (During Soldering, 1/32” from case, 10sec max), T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
DC Voltage
Pin1, Pin4, Pin9, Pin11
Pin2, Pin7, Pin8 V2, V7, V
Pin10 V
Pin12 V
Pin15 V
DC Current
Pin3
Pin6 I
Pin10 I
Pin13 I
Pin16 I
Dynamic Characteristics
(TA = +25C, V+ = 12V unless otherwise specified)
V1, V4, V9, V
I
10
13
16
11
8
10
12
15
3
6
760mW.........................................
40 to +85C..................................
65 to +150C..........................................
L
0.7 V
1.4 V
5.6 V
0 V
3.5 V
0.35 mA
1.0 mA
20 mA
0 mA
1.2 mA
+265C.................
Detector Output 30% Modulation 75 mV
Audio Amplifier Gain A
AF
Audio Distortion V
f = 1kHz 30 dB
= 100mV 0.2 %
OUT
Sensitivity
At Converter Stage Input
At RF Stage Input 100 V/m
fIN = 1MHz, Signalto−Noise Ratio (S/N) = 20dB
200 V/m
Total Harmonic Distortion THD 30% Modulation 1.0 %
Input Resistance
At Transistor Q1
R
IN
At Transistor Q5 2000
No AGC, Input Frequency Signal (f
) = 1MHz
IN
3500
Input Capacitance
At Transistor Q1
C
IN
17 pF
At Transistor Q5 12 pF
Feedback Capacitance
At Transistor Q1
C
FB
1.5 pF
At Transistor Q5 1.5 pF
rms
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Converter Input
Bypass
Converter Input
Pin Connection Diagram
1
2
16
15
V
CC
Audio Output
Converter Output
st
IF Amp Input
1
3
4
5Substrate GND
st
IF Amp Output
1
nd
IF Feedback
2
2nd IF Amp Input
6
7
8
16 9
14
From Detector Filter
AGC Output from
13
RF Amp
12
To Tuning Meter
11 AGC Filter
V
CC
10
To Detector Filter
9
& Audio
18
.260
.870 (22.0)
Max
(6.6) Max
.200 (5.08)
Max
.100 (2.54)
.099 (2.5) Min
.700 (17.78)
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