Datasheet ECG465, ECG464 Specification

NTE464 (P−Ch) & NTE465 (N−Ch)

Silicon Complementary MOSFET Transistors

Enhancement Mode for Switching Applications

Absolute Maximum Ratings:

Drain−Source Voltage, V

Drain−Gate Voltage, V

Gate−Source Voltage, V

Gate Current, I

G

Total Device Dissipation (T

Derate Above 255C 1.7mW/5C.....................................................

DS

DG

GS

= +255C), P

A

TO72 Type Package

D

25V..........................................................

30V............................................................

+30V.........................................................

30mA..................................................................

300mW.........................................

Total Device Dissipation (T

= +255C), P

C

Derate Above 255C 4.56mW/5C....................................................

Operating Junction Temperature, T

Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Drain−Source Breakdown Voltage V

Zero−Gate−Voltage Drain Current I

Gate Reverse Current I

ON Characteristics

Gate Threshold Voltage V

Drain−Source On−Voltage V

On−State Drain Current I

stg

(TA = +255C unless otherwise specified)

(BR)DSXID

D

J

= −105 A, VGS = 0 −25 − − V

DSS

GSS

GS(Th)VDS

DS(on)ID

D(on)

VDS = −10V, VGS = 0, TA = +255C − − −10 nA

VDS = −10V, VGS = 0, TA = +1505C − − −10 5 A

VGS = +30V, VDS = 0 − − +10 pA

= −2mA, VGS = −10V − − −1 V

VGS = −10V, VDS = −10V −3 − − mA

800mW.........................................

+1755C...............................................

−555 to +1755C..........................................

= −10V, ID = −105 A −1 − −5 V

Rev. 10−13

Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Small−Signal Characteristics

Drain−Source Resistance

NTE464

NTE465 − − 300 +

Forward Transfer Admittance |yfs| VDS = −10V, ID = 2mA, f = 1kHz 1000 − − 5 mhos

r

ds(on)

VGS = −10V, ID = 0, f = 1kHz − − 600 +

Input Capacitance C

Reverse Transfer Capacitance C

Drain−Substrate Capacitance

NTE464

NTE465 − − 5 pF

Switching Characteristics

Turn−On Delay t

Rise Time t

Turn−Off Delay t

Fall Time t

NTE464

C

d(sub)

iss

rss

d1

d2

VDS = −10V, VGS = 0, f = 140kHz

VDS = 0, VGS = 0, f = 140kHz − − 1.3 pF

V

ID = −2mA, VDS = −10V, VGS = −10V

r

f

= −10V, f = 140kHz − − 4

D(SUB)

− − 5 pF

− − 45 ns

− − 65 ns

− − 60 ns

− − 100 ns

.220 (5.58) Dia

.185 (4.7) Dia

D

.190

(4.82)

.030 (.762)

G

Case

S

pF

G

NTE465

D

Case

S

(12.7)

Source

.500

Min

.018 (0.45) Dia

Gate

Drain

455

Case

.040 (1.02)