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Silicon P−Channel JFET Transistor
Absolute Maximum Ratings:
Drain−Gate Voltage, V
Reverse Gate−Source Voltage, V
Gate Current, I
G
Total Device Dissipation (T
Derate above 255C 1.7mW/5C.....................................................
Storage Temperature Range, T
DG
= +255C), P
A
stg
NTE460
AF Amp
TO72 Type Package
GSR
D
20V............................................................
20V.................................................
10mA..................................................................
0.3W............................................
−655 to +2005C..........................................
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate−Source Breakdown Voltage V
Gate Reverse Current I
ON Characteristics
Zero−Gate−Voltage Drain Current I
Gate−Source Voltage V
Drain−Source Resistance r
Small−Signal Characteristics
Forward Transfer Admittance |yfs| VDS = 10V, ID = 2mA, f = 1kHz, Note 1 1500 − 3000 5 mhos
Output Admittance |yos| VDS = 10V, ID = 2mA, f = 1kHz − − 40 5 mhos
Reverse Transfer Conductance |yrs| VDS = 10V, ID = 2mA, f = 1kHz − − 0.1 5 mhos
Input Conductance |yis| VDS = 10V, ID = 2mA, f = 1kHz − − 0.2 5 mhos
Inpu Capacitance C
Functional Characteristics
: (TA = +255C unless otherwise specified)
(BR)GSSIG
GSS
DSS
GS
DS
iss
= 105 A, VDS = 0 20 − − V
VGS = 10V, VDS = 0 − − 10 nA
VGS = 10V, VDS = 0, TA = +1505C − − 10 5A
VDS = −10V, VGS = 0, Note 1 2.0 − 6.0 mA
VDG = −15V, ID = 105 A − − 6.0 V
ID = 1005 A, VGS = 0 − − 800 3
VDS = 10V, ID = 2mA, f = 10MHz, Note 1 1350 − − 5 mhos
VDS = 10V, VGS = 1V, f = 1MHz − − 20 pF
Noise Figure NF VDS = −5V, ID = 1mA, Rg = 1M3, f = 1kHz − − 3.0 dB
Note 1. Pulse Test: PulseWidth 3 630ms, Duty Cycle 3 10%.
Rev. 10−13
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.190
(4.82)
D
G
S
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.500
(12.7)
Source
Min
.018 (0.45) Dia
Gate
Drain
455
Case
.040 (1.02)
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