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NTE347
Silicon NPN Transistor
RF Power Output
PO = 3W @ 175MHz
Description:
The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in military and industrial equipment operating to 240MHz.
Features:
D Low lead inductance stripline package for easier design and increased broadband capability.
D Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed
to withstand an Open or Shorted Load at rated Output Power.
D Specified 13.6 volt, 175MHz Characteristics−
Output Power = 3.0 Watts
Minimum Gain = 8.2dB
Efficiency = 50%
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
CEO
CB
EB
Continuous Collector Current, IC 0.6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C), P
D
Derate Above 25°C 86mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ −65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
−65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
36V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4.0V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage V
Collector−Emitter Breakdown Voltage V
Emitter−Base Breakdown Voltage V
Collector Cutoff Current V
ON CHARACTERISTICS
DC Current Gain h
DYNAMIC CHARACTERISTICS
Output Capacitance C
(BR)CEOIC
(BR)CESIC
(BR)CBOIE
(BR)CBOVCB
FE
ob
= 200mA, IB = 0 18 − − V
= 200mA, IB = 0 36 − − V
= 1.0mA, IC = 0 4.0 − − V
= 15V, IE = 0 − − 1.0 mA
IC = 100mA, VCE = 5.0Vdc 5.0 − − −
VCB = 15V, IE = 0, f = 0.1 to 1.0 MHz − 15 30 pF
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
FUNCTIONAL TEST
Power Input P
Common−Emitter Amplifier Power Gain G
Collector Efficiency η 50 − − %
in
PE
P
= 3W, VCE = 13.6V,
OUT
f = 175MHz
1.065 (27.08) Max
.530
(13.46)
C
E
− 0.35 0.45 W
8.2 − − dB
.220
(5.58)
.005 (0.15)
.030 (.762)
.090 (2.28)
.325 (8.28) Dia
8−32 NC−3A
Wrench Flat
E
.305
(7.75)
B
.375 (9.52) Dia
.260 (6.60)
.075
(1.94)
.730
(18.54)
.115 (2.92)
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