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NTE339
Silicon NPN Transistor
RF Power Output
Description:
The NTE339 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for use in large−
signal amplifier stages in industrial communications equipment operating at frequencies to 80MHz.
D Specified 12.5 Volt, 50MHz Characteristics
Output Power = 40 Watts
Minimum Gain = 7.5dB
Efficiency = 50%
Absolute Maximum Ratings:
Collector−Base Voltage, V
Collector−Emitter Voltage, V
Emitter−Base Voltage, V
EBO
Continuous Collector Current, I
Total Device Dissipation (T
(TC = +25°C unless otherwise specified)
CBO
CEO
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25°C), P
C
tot
48V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
24V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 571mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperatures Range, T
j
stg
Thermal Resistance, Junction−to−Case, R
−65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.55°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
Electrical Characteristics
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V
Emitter−Base Breakdown Voltage V
Collector Cutoff Current I
ON Characteristics
: (TC = +25°C unless otherwise specified)
(BR)CEOIC
V
(BR)CESIC
(BR)EBOIC
CBO
I
CES
= 200mA, IB = 0, Note 2 24 − − V
= 100mA, VBE = 0, Note 2 48 − − V
= 0, IE = 10mA 4 − − V
VCB = 15V, IE = 0 − − 1.0 mA
VCB = 15V, IE = 0, TA = +125°C − − 10 mA
DC Current Gain h
Dynamic Characteristics
Output Capacitance C
Functional Test
Common−Emitter Amplifier Power Gain G
Collector Efficiency η 50 − − %
FE
VCE = 5V, IC = 2.4A 3 7 −
VCB = 12.5V, IE = 0, f = 0.1 to 1.0MHz − 180 230 pF
ob
P
PE
= 40W, VCC = 12.5V, f = 50MHz 7.5 − − dB
OUT
Note 2. Pulsed through 25mH inductor.
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.525 (13.35)
1.065 (27.05) Max
.225
(5.72)
.090 (2.28)
.112 (2.85)
.420 (10.66) Dia
10−32 NC−3A
45°
C
E
E
.395 (10.05)
B
.500 (12.7) Dia
.260 (6.6)
.075 (1.9)
.115 (2.92)
Wrench Flat
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