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NTE338F
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a
power linear amplifier from 2 to 30MHz.
Features:
D Specified 12.5V, 30MHz Characteristics:
Output Power = 20W (PEP)
Minimum Gain = 12dB
Efficiency = 45%
D Intermodulation Distortion @ 20W (PEP):
IMD = –30dB Min
D 100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
CEO
CBO
EBO
C
Withstand Current (t = 5s) 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), P
D
Derate Above 25°C 0.46W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
stg
J
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJC
20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.2°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
(TC = +25°C unless otherwise specified)
(BR)CEOIC
V
(BR)CESIC
(BR)CBOIC
(BR)EBOIE
CES
= 50mA, IB = 0 20 – – V
= 50mA, VBE = 0 40 – – V
= 50mA, IE = 0 40 – – V
= 1mA, IC = 0 4 – – V
VCE = 12.5V, VBE = 0 – – 5 mA
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
FE
IC = 1A, VCE = 5V 10 35 –
Dynamic Characteristics
Output Capacitance C
ob
VCB = 12.5V, IE = 0, f = 1MHz – 15 200 pF
Functional Tests (VCC = 12.5V unless otherwise specified)
Common–Emitter Amplifier
Power Gain
Power Output P
Collector Efficiency
G
PE
out
η
P
= 20W (PEP), ICmax = 1.75A,
out
= 25mA, f = 30, 30.001MHz
I
CQ
VCE = 12.5V, f = 30MHz 20 – – W
P
= 20W (PEP), ICmax = 1.75A,
out
I
= 25mA, f = 30, 30.001MHz
CQ
Intermodulation Distortion IMD VCE = 12.5V, P
I
max = 1.75A, ICQ = 25mA,
C
f = 30, 30.001MHz
Load Mismatch P
= 20W (PEP), ICmax = 1.75A,
out
I
= 25mA, f = 30, 30.001MHz
CQ
.725 (18.42)
E
= 20W (PEP),
out
C
12 15 – dB
45 – – %
– –35 –30 dB
> 30:1 All Phase Angles
.122 (3.1) Dia
(2 Holes)
.250
(6.35)
.225 (5.72)
EB
.860 (21.84)
.378 (9.56) Dia
.005 (0.15)
.255
(6.5)
.185 (4.7) .085 (2.14)
.975 (24.77)
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