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NTE322
Silicon NPN Transistor
RF Power Output
Description:
The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits.
Features:
D Output Power: 3.5W (Min) @ VCC = 13.6V
D Power Gain: 11.5dB (Min)
D High Collector Emitter Breakdown Voltage: V
(BR)CES
D DC Current Gain: Linear to 500mA
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Power Dissipation (T
CES
EB
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= +25°C), P
A
D
Derate above 25°C 8.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
= +25°C), P
C
D
Derate above 25°C 80mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Junction Temperature Range, T
Thermal Resistance, Junction–to–Case, R
J
stg
thJC
Thermal Resistance, Junction to Ambient (Note 1), R
thJA
≥ 65V
65V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. R
is measured with the device soldered into a typical printed circuit board.
thJA
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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector Cutoff Current I
(BR)CESIC
(BR)EBOIE
CBO
= 150mA, VBE = 0, Note 2 65 – – V
= 1mA, IC = 0 3 – – V
VCB = 50V, IE = 0 – – 0.01 mA
ON Characteristics
DC Current Gain h
FE
IC = 100mA, VCE = 10V, Note 3 10 – –
Dynamic Characteristics
Output Capacitance C
VCB = 12V, IE = 0, f = 1MHz – – 40 pF
ob
Functional Test
Common–Emitter Amplifier Power Gain G
PE
Output Power P
Collector Efficiency η PO = 3.5W, VCC = 13.6V, f = 27MHz,
PO = 3.5W, VCC = 13.6V, f = 27MHz 11.5 – – dB
PIN = 250mW, VCC = 13.6V, f = 27MHz 3.5 – – W
O
– 70 – %
Note 4
Percentage Up–Modulation f = 27MHz, Note 5 – 85 – %
Note 2. Pulsed thru a 25mH inductor
Note 3. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
R
Note 4.
η =
F PO
100
(VCC) (IC)
Note 5. Percentage Up–Modulation is measured by setting the Carrier Power (P
V
= 13.6V and noting the power input. Then the peak envelope power (PEP) is noted after
CC
doubling the original power input to simulate driver modulation (at a 25% duty cycle for thermal considerations) and raising the V
to 25V (to simulate the modulating voltage). Per-
CC
centage Up–Modulation is then determined by the relation:
Percentage Up–Modulation =
INPUT C1 L1
C2
RFC1
PEP
P
27MHz Test Circuit
C5 C6
RFC2
L2 C4
C3
C
1/2
–1
100
V
CC
13.6V
OUTPUT
C1, C2 9.0 – 180pF ARCO 463 or Equivalent
C3, C4 5.0 – 80pF ARCO 462 or Equivalent
C5 0.02µF Ceramic Disc
C6 0.1µF Ceramic Disc
RFC1 4 Turns #30 Enameled Wire Wound on
Ferroxcube Bead Type 56–590–65/3B
RFC2 26 Turns #22 Enameled Wire (2 Layers –
13 Turns Each Layer)
L1 0.22µH Molded Choke
L2 0.68µH Molded Choke
) to 3.5 Watts with
C
1
/4” Inner Diameter
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.160
(4.06)
.380 (9.65) Max
.050 (1.27)
.100 (2.54)
.218
(5.55)
.475
(12.0)
Min
.100 (2.54)
Collector Connected to Tab
EBC
.280 (7.25) Max
.128 (3.28) Dia
.995
(25.3)
.200 (5.08)
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