Page 1
NTE319
Silicon NPN Transistor
VHF Amp with Forward AGC
Features:
D Low Feedback Capacity (C
D High Unneutralized Power Gain − 27dB Min at 45MHz
D V
Guaranteed for −30dB and −50dB at 45MHz
AGC
Absolute Maximum Ratings: (Note 1)
Collector−to−Base Voltage, V
Collector−to−Emitter Voltage (Note 2), V
Emitter−to−Base Voltage, V
Total Dissipation (Note 3), P
TC = +25°C 0.260W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TA = +25°C 0.175W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
Note 1. These ratings are limiting values above which the serviceability of any individual semiconductor
device may be impaired.
Note 2. Rating refers to a high−current point where collector−to−emitter voltage is lowest.
Note 3. These ratings give a maximum junction temperature of 175°c and junction−to−case thermal
resistance of 583°C/W (derating factor of 1.73mW/°C); junction−to−ambient thermal resistance
of 850°C/W (derating factor of 1.17mW/°C).
) −0.13pF Typ, 0.22pF Max
CB
CBO
20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
EBO
D
−55° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.0V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Power Gain PG VBE = 2V, f = 45MHz 27 29 − dB
Noise Figure NF VBE = 2V, f = 45MHz − 2.7 5.0 dB
AGC Voltage for 30dB Gain Reduction V
AGC Voltage for 50dB Gain Reduction
Collector Current for 30dB Gain Reduction I
Collector−to−Base Capacitance C
DC Current Gain h
Collector−Emitter Sustaining Voltage V
Collector Cutoff Current I
Collector−Base Breakdown Voltage V
Emitter−Base Breakdown Voltage V
CEO(sus)IC
(BR)CBOIC
(BR)EBOIE
AGC
AGC
FE
CBO
VCC = 12V, f = 45MHz 3.3 4.15 5.0 V
VCC = 12V, f = 45MHz − 6.15 7.5 V
VCC = 12V, f = 45MHz − 7.2 − mA
VCB = 10V, IE = 0, f = 1MHz − 0.13 0.22 pF
cb
VCE = 10V, IC = 2mA 20 80 220
= 1mA, IB = 0, Note 2 20 − − V
VCB = 20V, IE = 0 − − 50 nA
= 100µA, IE = 0 20 − − V
= 100µA, IC = 0 3.0 − − V
Note 2. Rating refers to a high−current point where collector−to−emitter voltage is lowest.
Page 2
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Saturation Voltage V
High Frequency Current Gain h
Input Resistance, Common Emitter R
Output Resistance, Common Emitter R
Input Capacitance, Common Emitter C
Output Capacitance, Common Emitter C
CE(sat)IC
.190
(4.82)
FE
iep
oep
iep
oep
= 1mA, IB = 5mA − − 2.75 V
VCE = 10V, IC = 2mA, f = 100MHz 3 5 − V
VCE = 10V, IC = 2mA, f = 45MHz
− 400 − W
− 67 − kΩ
− 16 − pF
− 1.2 − pF
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
(12.7)
Base
.500
Min
.018 (0.45) Dia
Emitter
Collector
45°
Case
.040 (1.02)
Loading...