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NTE306
Silicon NPN Transistor
AM, CB Transmitter Driver
Absolute Maximum Ratings: (Ta = +25°C, unless otherwise specified)
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Base Current, I
C
B
Total Device Dissipation, P
CEO
CB
EB
C
Ta = +25°C 950mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tc = +25°C 7.9W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction−to−Case, R
J
thJC
Electrical Characteristics: (TC = +75°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−50° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−50° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector−Base Cutoff Current I
Emitter Cutoff Current I
Base−Emitter Voltage V
Collector−Emitter Sustaining Voltage V
Collector−Emitter Saturation Voltage V
Base−Emitter Saturation Voltage V
DC Current Gain h
Small Signal Current Gain |hFE| VCB = 2V, IE = 10mA, f = 10MHz − 18 − db
Collector Capacitence C
CBO
EBO
BE
CEO(sus)IC
CE(sat)
BE(Sat)
FE
VCB = 25V, IE = 0 − − 0.2 µA
VEB = 6V, IC = 0 − − 0.2 µA
VCE = 6V, IC = 5mA − − 0.7 V
= 2mA 50 − − V
− − 0.3 V
IC = 1A, IB = 50mA
VCE = 2V, IC = 100mA 98 − 649
VCE = 1V, IC = 1A 70 − −
VCB = 10V, IE = 0, f = 1MHz − 16 40 pF
C
− − 1.0 V
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.386 (9.8) Max
.165 (4.2)
Max
.323
(8.2)
Max
.288
(7.3)
Max
.118 (3.0)
.284
(7.22)
BCE
.075 (1.9)
.122 (3.1) Dia
.490
(12.44)
Min
0.25 (0.65) Max
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