Page 1
DATA SHEET
256MB Unbuffered SDRAM DIMM
EBS25UC8APFA (32M words ×××× 64 bits, 1 bank)
Description
The EBS25UC8APFA is 32M words × 64 bits, 1 bank
Synchronous Dynamic RAM Registered Module,
mounted 8 pieces of 256M bits SDRAM sealed in
TSOP package. This module provides high density
and large quantities of memory in a small space
without utilizing the surface mounting technology.
Decoupling capacitors are mounted on power supply
line for noise reduction.
Features
• Fully compatible with 8 bytes DIMM: JEDEC
standard outline
• 168-pin socket type dual in line memory module
(DIMM)
PCB height: 34.93mm (1.38inch )
Lead pitch: 1.27mm
• 3.3V power supply
• Clock frequency: 133MHz (max.)
• LVTTL interface
• Data bus width: × 64 non-ECC
• Single pulsed /RAS
• 4 Banks can operates simultaneously and
independently
• Burst read/write operation and burst read/single write
operation capability
• Programmable burst length (BL): 1, 2, 4, 8
• 2 variations of burst sequence
Sequential
Interleave
• Programmable /CAS latency (CL): 2, 3
• Byte control by DQMB
• Refresh cycles: 8192 refresh cycles/64ms
• 2 variations of refresh
Auto refresh
Self refresh
Document No. E0210E20 (Ver. 2.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2001-2002
Page 2
EBS25UC8APFA
Ordering Information
Part number
EBS25UC8APFA-7A
EBS25UC8APFA-75 *
Note: 100MHz operation at /CAS latency = 2.
Pin Configurations
Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name
1 VSS 43 VSS 85 VSS 127 VSS
2 DQ0 44 NC 86 DQ32 128 CKE0
3 DQ1 45 /CS2 87 DQ33 129 NC
4 DQ2 46 DQMB2 88 DQ34 130 DQMB6
5 DQ3 47 DQMB3 89 DQ35 131 DQMB7
6 VDD 48 NC 90 VDD 132 NC
7 DQ4 49 VDD 91 DQ36 133 VDD
8 DQ5 50 NC 92 DQ37 134 NC
9 DQ6 51 NC 93 DQ38 135 NC
10 DQ7 52 NC 94 DQ39 136 NC
11 DQ8 53 NC 95 DQ40 137 NC
12 VSS 54 VSS 96 VSS 138 VSS
13 DQ9 55 DQ16 97 DQ41 139 DQ48
14 DQ10 56 DQ17 98 DQ42 140 DQ49
15 DQ11 57 DQ18 99 DQ43 141 DQ50
16 DQ12 58 DQ19 100 DQ44 142 DQ51
17 DQ13 59 VDD 101 DQ45 143 VDD
18 VDD 60 DQ20 102 VDD 144 DQ52
19 DQ14 61 NC 103 DQ46 145 NC
20 DQ15 62 NC 104 DQ47 146 NC
21 NC 63 NC 105 NC 147 NC
22 NC 64 VSS 106 NC 148 VSS
23 VSS 65 DQ21 107 VSS 149 DQ53
24 NC 66 DQ22 108 NC 150 DQ54
25 NC 67 DQ23 109 NC 151 DQ55
26 VDD 68 VSS 110 VDD 152 VSS
27 /WE 69 DQ24 111 /CAS 153 DQ56
28 DQMB0 70 DQ25 112 DQMB4 154 DQ57
29 DQMB1 71 DQ26 113 DQMB5 155 DQ58
30 /CS0 72 DQ27 114 NC 156 DQ59
Clock frequency
MHz (max.)
133
133
/CAS latency Package
2, 3
3
1 pin 10 pin11 pin 40 pin 41 pin 84 pin
85 pin 94 pin 95 pin 124 pin 125 pin 168 pin
168-pin DIMM Gold EDS2508APTA
Contact pad
Mounted devices
Data Sheet E0210E20 (Ver. 2.0)
2
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EBS25UC8APFA
Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name
31 NC 73 VDD 115 /RAS 157 VDD
32 VSS 74 DQ28 116 VSS 158 DQ60
33 A0 75 DQ29 117 A1 159 DQ61
34 A2 76 DQ30 118 A3 160 DQ62
35 A4 77 DQ31 119 A5 161 DQ63
36 A6 78 VSS 120 A7 162 VSS
37 A8 79 CLK2 121 A9 163 CLK3
38 A10 (AP) 80 NC 122 BA0 164 NC
39 BA1 81 NC 123 A11 165 SA0
40 VDD 82 SDA 124 VDD 166 SA1
41 VDD 83 SCL 125 CLK1 167 SA2
42 CLK0 84 VDD 126 A12 168 VDD
Pin Description
Pin name Function
Address input
A0 to A12
BA0, BA1 Bank select address
DQ0 to DQ63 Data input/output
/CS0, /CS2 Chip select input
/RAS Row enable (/RAS) input
/CAS Column enable (/CAS) input
/WE Write enable input
DQMB0 to DQMB7 Byte data mask
CLK0 to CLK3 Clock input
CKE0 Clock enable input
SDA Data input/output for serial PD
SCL Clock input for serial PD
SA0 to SA2 Serial address input
VDD Primary positive power supply
VSS Ground
NC No connection
Row address A0 to A12
Column address A0 to A9
Data Sheet E0210E20 (Ver. 2.0)
3
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EBS25UC8APFA
Serial PD Matrix
Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
0
1 Total SPD memory size 0 0 0 0 1 0 0 0 08H 256 bytes
2 Memory type 0 0 0 0 0 1 0 0 04H SDRAM
3 Number of row addresses bits 0 0 0 0 1 1 0 1 0DH 13
4 Number of column addresses bits 0 0 0 0 1 0 1 0 0AH 10
5 Number of banks 0 0 0 0 0 0 0 1 01H 1
6 Module data width 0 1 0 0 0 0 0 0 40H 64 bits
7 Module data width (continued) 0 0 0 0 0 0 0 0 00H 0
8 Module interface signal levels 0 0 0 0 0 0 0 1 01H LVTTL
9
10
11 Module configuration type 0 0 0 0 0 0 0 0 00H None.
12 Refresh rate/type 1 0 0 0 0 0 1 0 82H 7.8µs
13 SDRAM width
14 Error checking SDRAM width
15
16
17
18
19
20
21 SDRAM device attributes 0 0 0 0 0 0 0 0 00H
22 SDRAM device attributes: General 0 0 0 0 1 1 1 0 0EH
23
(-75) 1 0 1 0 0 0 0 0 A0H 10ns
24
(-75) 0 1 1 0 0 0 0 0 60H 6ns
25 to 26 0 0 0 0 0 0 0 0 00H
27
(-75) 0 0 0 1 0 1 0 0 14H 20ns
28
(-75) 0 0 0 0 1 1 1 1 0FH 15ns
Number of bytes used by module
manufacturer
SDRAM cycle time at CL = 3
(highest /CAS latency)
SDRAM access from Clock at CL = 3
(highest /CAS latency)
SDRAM device attributes:
minimum clock delay for back-toback random column addresses
SDRAM device attributes:
Burst lengths supported
SDRAM device attributes: number of
banks on SDRAM device
SDRAM device attributes:
/CAS latency
SDRAM device attributes:
/CS latency
SDRAM device attributes:
/WE latency
SDRAM cycle time at CL = 2
(2nd highest /CAS latency)
(-7A)
SDRAM access from Clock at CL = 2
(2nd highest /CAS latency)
(-7A)
Minimum row precharge time
(-7A)
Row active to row active min
(-7A)
1 0 0 0 0 0 0 0 80H 128 bytes
0 1 1 1 0 1 0 1 75H 7.5ns
0 1 0 1 0 1 0 0 54H 5.4ns
0 0 0 0 1 0 0 0 08H × 8
0 0 0 0 0 0 0 0 00H None.
0 0 0 0 0 0 0 1 01H 1 CLK
1 0 0 0 1 1 1 1 8FH 1, 2, 4, 8, F
0 0 0 0 0 1 0 0 04H 4
0 0 0 0 0 1 1 0 06H 2, 3
0 0 0 0 0 0 0 1 01H 0
0 0 0 0 0 0 0 1 01H 0
0 1 1 1 0 1 0 1 75H 7.5ns
0 1 0 1 0 1 0 0 54H 5.4ns
0 0 0 0 1 1 1 1 0FH 15ns
0 0 0 0 1 1 1 1 0FH 15ns
Data Sheet E0210E20 (Ver. 2.0)
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EBS25UC8APFA
Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments
29
(-75) 0 0 0 1 0 1 0 0 14H 20ns
30 Minimum /RAS pulse width 0 0 1 0 1 1 0 1 2DH 45ns
31 Density of each bank on module 0 1 0 0 0 0 0 0 40H 256MB
32
33
34 Data signal input setup time 0 0 0 1 0 1 0 1 15H 1.5ns
35 Data signal input hold time 0 0 0 0 1 0 0 0 08H 0.8ns
36 to 61 Superset information 0 0 0 0 0 0 0 0 00H
62 SPD data revision code 0 0 0 1 0 0 1 0 12H 1.2
63
(-75) 1 1 0 1 0 0 1 0 D2H
64 to 65 Manufacturer’s JEDEC ID code 0 1 1 1 1 1 1 1 7FH Continuation code
66 Manufacturer’s JEDEC ID code 1 1 1 1 1 1 1 0 FEH Elpida Memory
67 to 71 Manufacturer’s JEDEC ID code 0 0 0 0 0 0 0 0 00H
72 Manufacturing location
73 to 90 Manufacturer’s part number
91 to 92 Revision code
93 to 94 Manufacturing date
95 to 98 Assembly serial number
99 to 125 Manufacturer specific data
126
127
/RAS to /CAS delay min
(-7A)
Address and command signal input
setup time
Address and command signal input
hold time
Checksum for Bytes 0 to 62
(-7A)
Reserved (Intel specification
frequency)
Reserved (Intel specification /CAS#
latency support)
0 0 0 0 1 1 1 1 0FH 15ns
0 0 0 1 0 1 0 1 15H 1.5ns
0 0 0 0 1 0 0 0 08H 0.8ns
1 0 0 1 0 0 0 1 91H
0 1 1 0 0 1 0 0 64H 100MHz
1 1 1 1 1 1 1 1 FFH
Data Sheet E0210E20 (Ver. 2.0)
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Block Diagram
/WE
/CS0
DQMB0
DQ 0
DQ 1
DQ 2
DQ 3
DQ 4
DQ 5
DQ 6
DQ 7
DQ 7
DQ 6
DQ 5
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0
DQM
EBS25UC8APFA
/CS2
DQMB2
/WE
/CS
D0
DQ 16
DQ 17
DQ 18
DQ 19
DQ 20
DQ 21
DQ 22
DQ 23
DQMD2/CS /WE
DQ 7
DQ 6
DQ 5
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0
DQMB1
DQ 8
DQ 9
DQ 10
DQ 11
DQ 12
DQ 13
DQ 14
DQ 15
DQMB4
DQ 32
DQ 33
DQ 34
DQ 35
DQ 36
DQ 37
DQ 38
DQ 39
DQMB5
DQ 40
DQ 41
DQ 42
DQ 43
DQ 44
DQ 45
DQ 46
DQ 47
DQ 7
DQ 6
DQ 5
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0
DQ 4
DQ 7
DQ 6
DQ 5
DQ 3
DQ 2
DQ 1
DQ 0
DQ 5
DQ 7
DQ 6
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0
DQM
/CS
D1
DQM /CS
D4
DQM
/CS
D5
/WE
/WE
/WE
DQMB3
DQ 24
DQ 25
DQ 26
DQ 27
DQ 28
DQ 29
DQ 30
DQ 31
DQMB6
DQ 48
DQ 49
DQ 50
DQ 51
DQ 52
DQ 53
DQ 54
DQ 55
DQMB7
DQ 56
DQ 57
DQ 58
DQ 59
DQ 60
DQ 61
DQ 62
DQ 63
DQ 4
DQ 7
DQ 6
DQ 5
DQ 3
DQ 2
DQ 1
DQ 0
DQ 7
DQ 6
DQ 5
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0
DQ 7
DQ 6
DQ 5
DQ 4
DQ 3
DQ 2
DQ 1
DQ 0
DQM
DQM
DQM
D3
D6
D7
/CS
/CS
/CS
/WE
/WE
/WE
CLK0
CLK2
CLK1, CLK3
V
V
CC
SS
Remarks 1. The value of all resistors is 10Ω.
2. D0 to D7: 256M bits SDRAM
CLK : D0, D1, D4, D5
3.3 pF
CLK : D2, D3, D6, D7
3.3 pF
10 pF
D0 to D7
C
D0 to D7
A0 to A11
CKE0
SCL
BA0
BA1
/RAS
/CAS
SERIAL PD
A0
SA1 SA2
SA0
A0 to A11 : D0 to D7
A13 : D0 to D7
A12 : D0 to D7
/RAS : D0 to D7
/CAS : D0 to D7
CKE : D0 to D7
SDA
A1 A2
Data Sheet E0210E20 (Ver. 2.0)
6
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EBS25UC8APFA
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 100µs and then, execute power on sequence and CBR (Auto) refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter Symbol Value Unit Note
Voltage on any pin relative to VSS VT
Supply voltage relative to VSS VDD –0.5 to +4.6 V
Short circuit output current IOS 50 mA
Power dissipation PD 8 W
Operating temperature TA 0 to +70 °C 1
Storage temperature Tstg –55 to +125 °C
–0.5 to VDD + 0.5
(≤ 4.6 (max.))
V
Notes: 1. SDRAM device specification
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
DC Operating Conditions (TA = 0 to +70°C) (SDRAM device specification)
Parameter Symbol min. max. Unit Note
Supply voltage VDD 3.0 3.6 V 1
VSS 0 0 V 2
Input high voltage VIH 2.0 VDD + 0.3 V 3
Input low voltage VIL −0.3 0.8 V 4
Notes: 1. The supply voltage with all VDD pins must be on the same level.
2. The supply voltage with all VSS pins must be on the same level.
3. VIH (max.) = VDD + 2.0V for pulse width ≤ 3ns at VDD.
4. VIL (min.) = VSS − 2.0V for pulse width ≤ 3ns at VSS.
Data Sheet E0210E20 (Ver. 2.0)
7
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EBS25UC8APFA
DC Characteristics1 (TA = 0 to 70°C, VDD = 3.3V ± 0.3V, VSS = 0V)
Parameter Symbol Grade max. Unit Test condition Notes
Operating current ICC1 -7A 1040 mA
ICC1 -75 880 mA
Standby current in power down ICC2P 24 mA CKE = VIL, tCK = 12ns 6
Standby current in non power
down
Active standby current in power
down
Active standby current in non
power down
Burst operating current ICC4 1080 mA tCK = tCK (min.), BL = 4 1, 2, 5
Refresh current ICC5 -7A 2000 mA tRC = tRC (min.) 3
ICC5 -75 1760 mA
Self refresh current ICC6 24 mA
ICC2N 160 mA
ICC3P 32 mA CKE = VIL, tCK = 12ns 1, 2, 6
ICC3N 240 mA
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, /CLK operating current.
7. After self refresh mode set, self refresh current.
Burst length = 1
tRC = tRC (min.)
CKE, /CS = VIH,
tCK = 12ns
CKE, /CS = VIH,
tCK = 12ns
VIH ≥ VDD – 0.2V
VIL ≤ 0.2V
1, 2, 3
4
1, 2, 4
7
DC Characteristics2 (TA = 0 to 70°C, VDD = 3.3V ± 0.3V, VSS = 0V)
Parameter Symbol min. max. Unit Test condition Notes
Input leakage current ILI –8 8 µA 0 ≤ VIN ≤ VDD
Output leakage current ILO –1.5 1.5 µA
Output high voltage VOH 2.4 — V IOH = –4mA
Output low voltage VOL — 0.4 V IOL = 4mA
0 ≤ VOUT ≤ VDD
DQ = disable
Data Sheet E0210E20 (Ver. 2.0)
8
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EBS25UC8APFA
Pin Capacitance (TA = 25°C, VDD = 3.3V ± 0.3V)
Parameter Symbol Pins max. Unit
Input capacitance CI1 Address TBD pF
CI2 /RAS, /CAS, /WE TBD pF
CI3 CKE TBD pF
CI4 /CS TBD pF
CI5 CLK TBD pF
CI6 DQMB TBD pF
Data input/output capacitance CI/O1 DQ TBD pF
AC Characteristics (TA = 0 to 70°C, VDD = 3.3V ± 0.3V, VSS = 0V) (SDRAM device specification)
-7A -75
Parameter Symbol min. min. max. Unit Notes
System clock cycle time tCK 7.5 7.5 — ns 1
CLK high pulse width tCH 2.5 2.5 — ns 1
CLK low pulse width tCL 2.5 2.5 — ns 1
Access time from CLK tAC — — 5.4 ns 1, 2
Data-out hold time tOH 2.7 2.7 — ns 1, 2
CLK to Data-out low impedance tLZ 1 1 — ns 1, 2, 3
CLK to Data-out high impedance tHZ — — 5.4 ns 1, 4
Input setup time tSI 1.5 1.5 — ns 1
Input hold time tHI 0.8 0.8 — ns 1
Ref/Active to Ref/Active command period tRC 60 67.5 — ns 1
Active to Precharge command period tRAS 45 45 120000 ns 1
Active command to column command
(same bank)
Precharge to active command period tRP 15 20 — ns 1
Write recovery or data-in to precharge
lead time
Last data into active latency tDAL 2CLK + 15ns 2CLK + 20ns —
Active (a) to Active (b) command period tRRD 15 15 — ns 1
Transition time (rise and fall) tT 0.5 0.5 5 ns
Refresh period
(8192 refresh cycles)
tRCD 15 20 — ns 1
tDPL 15 15 — ns 1
tREF — — 64 ms
Notes: 1. AC measurement assumes tT = 0.5ns. Reference level for timing of input signals is 1.4V.
2. Access time is measured at 1.4V. Load condition is CL = 50pF.
3. tLZ (min.) defines the time at which the outputs achieves the low impedance state.
4. tHZ (max.) defines the time at which the outputs achieves the high impedance state.
Notes
Data Sheet E0210E20 (Ver. 2.0)
9
Page 10
Test Conditions
• Input and output timing reference levels: 1.4V
• Input waveform and output load: See following figures
EBS25UC8APFA
2.4V
0.4V
2.0V
0.8V
t
T
tT
DQ
CL
Input Waveform and Output Load
Relationship Between Frequency and Minimum Latency (SDRAM device specification)
Parameter -7A -75
Frequency (MHz) 133 133 133
tCK (ns) 7.5 7.5 7.5
/CAS latency Symbol CL = 3 CL = 2 CL = 3 Notes
Active command to column command
(same bank)
Active command to active command
(same bank)
Active command to precharge command
(same bank)
Precharge command to active command
(same bank)
Write recovery or data-in to precharge
command (same bank)
Active command to active command
(different bank)
Self refresh exit time lSREX 1 1 1 2
Last data in to active command
(Auto precharge, same bank)
Self refresh exit to command input lSEC 8 8 9
Precharge command to high impedance lHZP 3 2 3
Last data out to active command
(Auto precharge, same bank)
Last data out to precharge (early
precharge)
Column command to column command lCCD 1 1 1
Write command to data in latency lWCD 0 0 0
DQM to data in lDID 0 0 0
DQM to data out lDOD 2 2 2
CKE to CLK disable lCLE 1 1 1
Register set to active command lMRD 2 2 2
/CS to command disable lCDD 0 0 0
Power down exit to command input lPEC 1 1 1
lRCD 2 2 3 1
lRC 8 8 9 1
lRAS 6 6 6 1
lRP 2 2 3 1
lDPL 2 2 2 1
lRRD 2 2 2 1
lDAL 4 4 5 = [lDPL + lRP]
= [lRC]
3
lAPR 1 1 1
lEP –2 –1 –2
Notes: 1. IRCD to IRRD are recommended value.
2. Be valid [DESL] or [NOP] at next command of self refresh exit.
3. Except [DESL] and [NOP]
Data Sheet E0210E20 (Ver. 2.0)
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EBS25UC8APFA
Pin Functions
CLK0 to CLK3 (input pin): CLK is the master clock input to this pin. The other input signals are referred at CLK
rising edge.
/CS0 to /CS3 (input pin): W hen /CS is Low, the command input cycle becomes valid. When /CS is High, all inputs
are ignored. However, internal operations (bank active, burst operations, etc.) are held.
/RAS, /CAS and /WE (input pins): Although these pin names are the same as those of conventional DRAMs, they
function in a different way. These pins define operation commands (read, write, etc.) depending on the combination
of their voltage levels. For details, refer to the command operation section.
A0 to A12 (input pins): Row address (AX0 to AX12) is determined by A0 to A12 level at the bank active command
cycle CLK rising edge. Column address (AY0 to AY9) is determined by A0 to A9 level at the read or write command
cycle CLK rising edge. And this column address becomes burst access start address. A10 defines the precharge
mode. When A10 = High at the precharge command cycle, all banks are precharged. But when A10 = Low at the
precharge command cycle, only the bank that is selected by BA0 and BA1 (BA) is precharged.
BA0 and BA1 (input pin)
BA0 and BA1 are bank select signal (BA). (See Bank Select Signal Table)
[Bank Select Signal Table]
BA0 BA1
Bank 0 L L
Bank 1 H L
Bank 2 L H
Bank 3 H H
Remark: H: VIH. L: VIL.
CKE0 (input pin): This pin determines whether or not the next CLK is valid. If CKE is High, the next CLK rising
edge is valid. If CKE is Low, the next CLK rising edge is invalid. This pin is used for power-down and clock suspend
modes.
DQMB0 to DQMB7 (input pins): Read operation: If DQMB is High, the output buffer becomes High-Z. If the
DQMB is Low, the output buffer becomes Low-Z.
Write operation: If DQMB is High, the previous data is held (the new data is not written). If DQMB is Low, the data
is written.
DQ0 to DQ63 (input/output pins): Data is input to and output from these pins.
VDD (power supply pins): 3.3V is applied.
VSS (power supply pins): Ground is connected.
Detailed Operation Part
Refer to the EDS2504APTA/08APTA/16APTA datasheet (E0272E).
Data Sheet E0210E20 (Ver. 2.0)
11
Page 12
Physical Outline
EBS25UC8APFA
Front side
3.00
3.00
Back side
4.00
(DATUM -A-)
(63.67)
Component area
(Front)
1 84
C
11.43
2 – φ 3.00
85
36.83 54.61
133.35
127.35
Component area
(Back)
Unit: mm
4.80 Max
4.00 Min
AB
1.27
168
17.80
34.93
(DATUM -A-)
Detail A
1.27
0.050
2.50 ± 0.20
1.00 ± 0.05
Note: Tolerance on all dimensions ± 0.15 unless otherwise specified.
Detail B Detail C
R FULL
0.20 ± 0.15
3.125 ± 0.125
(DATUM -A-)
6.35 6.35
2.00 ± 0.10 4.175
1.00
3.125 ± 0.125
R FULL
2.00 ± 0.10
ECA-TS2-0049-01
Data Sheet E0210E20 (Ver. 2.0)
12
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EBS25UC8APFA
CAUTION FOR HANDLING MEMORY MODULES
When handling or inserting memory modules, be sure not to touch any components on the modules, such as
the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on
these components to prevent damaging them.
In particular, do not push module cover or drop the modules in order to protect from mechanical defects,
which would be electrical defects.
When re-packing memory modules, be sure the modules are not touching each other.
Modules in contact with other modules may cause excessive mechanical stress, which may damage the
modules.
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to V
DD
or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
MDE0202
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Data Sheet E0210E20 (Ver. 2.0)
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EBS25UC8APFA
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0107
Data Sheet E0210E20 (Ver. 2.0)
14
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