Datasheet E2580, E2560 Datasheet (AGERE)

Advance Data Sheet
January 1999

E2560/E2580-Type 10 Gbits/s EML Modules

Features

■

Integrated electroabsorptive modulator

■

1.5 µm wavelength

■

Characterized for 10 Gbits/s operation

■

For use up to 80 km at 10 Gbits/s

■

Low modulation voltage

■

Temperature stabilized

■

Available with and without integral driver IC

■

Wavelength selectable to ITU-T standards

■

Ultrastable wavelength aging for DWDM

Applications

■

SONET/SDH applications

■

Ultrahigh capacity WDM system application

■

High-speed data communication

■

Digitized video

Description

The E2560 (without integral driver IC) and E2580
(with integral driver IC) are devices for 10 Gbits/s
DWDM or TDM transmission applications, which inte­grate a CW laser with an electroabsorptive modulator
in the same semiconductor chip, and are an exten­sion of Lucent Technologies Microelectronics
Groups’ existing E2500 series of devices. Both types
use a small-profile Gilbert GPO connector to handle
the RF signal. The device is typically coupled with a
number of erbium-doped fiber amplifiers, such as
Lucent Technologies' 1724-series, in order to ensure
that sufficient optical power reaches the receiver.
These devices can replace external modulators
which are often bulkier, more expensive, and require
more complex drive electronics than the EML. Both
E2560 and E2580 are available for transmission dis­tances of 40 km and 80 km. The package also con­tains a thermoelectric cooler, thermistor, rear facet
monitor photodiode, and an optical isolator.

Advance Data Sheet
E2560/E2580-Type 10 Gbits/s EML Modules January 1999

2 Lucent Technologies Inc.

Description

(continued)

The nominal input impedance of the E2560 version is 50 Ω. The package is qualified to the Bellcore TA-TSY-
000468 standard.

Both E2560 and E2580 are available in a range of ITU-T wavelengths for use in D WDM systems operating at 10
Gbits/s per channel. The device has excellent wavelength stability , supporting operation at 100 GHz channel spac­ing over 20 years (assuming an end-of-life aging condition of <±100 pm). Typically, no external wavelength stabili­zation is required in systems of this type, using Lucent's E2500 series EMLs. The package also offers excellent
stability of wavelength vs. case temperature, with a maximum coefficient of 0.5 pm/°C.

Module Characteristics

Table 1. Module Characteristics

Pin Information

Table 2. Pin Descriptions

Note: For full details o f pin functions and required bias levels for the version with the IC, refer to

E2580 EML with Integral Driver IC: Pin

Definitions And Operation

Application Note (TBD):

Package Type E2560: 7-pin package with GPO connector RF input.

E2580: 13-pin package with GPO connector RF input.
Fiber Standard single-mode fibe r.
Connector

ST

®

; other connectors available on request.
RF Input Impedance 50 Ω.
Bit Rate 10 Gbits/s.

E2560 E2580

Pin Abbreviation Definition Pin Abbreviation Definition

— — — 13 TEC– Themoelectric cooler–
— — — 12 TEC+ Thermoelectric cooler+
—— — 11V

SS

Voltage supply to the IC
— — — 10 DCA Duty cycle adjust
— — — 9 OA Optical amplitude adjust
— — — 8 NC No connect/reserved

7 TEC– Themoelectric cooler– 7 NC No connect/reserved
6 TEC+ Thermoelectric cooler+ 6 VEA Modular offset (on-state)
5 BACK DET+ Monitor cathode (+) 5 BACK DET+ Monitor cathode (+)
4 BACK DET– Monitor anode (–) 4 BACK DET– Monitor anode (–)
3 LASER+ Laser anode 3 LASER+ Laser anode
2 THERM Thermistor 2 THERM Thermistor
1 THERM, LASER–,

CASE

Combined thermistor/
laser cathode/case

1 THERM, LASER–,

CASE

Combined thermistor/

laser cathode/case

Lucent Technologies Inc. 3

Advance Data Sheet
January 1999 E2560/E2580-Type 10 Gbits/s EML Modules

Target Specifications

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are
absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for
extended periods can adversely affect device reliability.

Table 3. Absolute Maximum Ratings

Characteristics

Table 4. Optical and Electrical Specifications

(Chip operating temp. = 15 °C to 35 °C, except where noted.)

Parameter Conditions Limit Unit

Laser Diode Reverse Voltage CW 2 V
Laser Diode Forward Current CW 150 mA
Optical Output Power CW 10 mW
Modulator Reverse Voltage — 5 V
Modulator Forward Voltage — 1 V
Monitor Diode Reverse Voltage — 10 V
Monitor Diode Forward Voltage — 1 V
Storage Temperature — –40 to +85 °C
Operating Temperature — –10 to +70 °C

Parameter Symbol Conditions Min Max Unit

Threshold Current (BOL) I

th

— 5 35 mA

Forward Voltage V

F

If = I

op

@ T

op

—2.2V

Operating Current I

op

— 50 100 mA

Threshold Power P

th

If – I

th

Vm = I

op

—80µW

Fiber Output Power (Peak) P

pk

Vm = 0 V

If = I

op

1—dBm

Peak Wavel ength

(Wavelength can be specified
to the ITU wavelength
channels.)

λ0 V

m

= 0 V

T

laser chip

= T

op

If = I

op

1530 1563 nm

Side-mode Suppression Ratio SMSR V

m

= 0 V

If = I

op, Top

30 — dB

Dispersion Penalty

BER = 10

–10

DP 10 Gbits/s*

V

low

= –1.5 to –3.0 V,

V

high

= 0 V to –1 V

If = l

op

@ T

op

—2.0dB

* Over 720 ps/nm (40 km ver sion), 1440 ps/nm (80 km version).

Advance Data Sheet
E2560/E2580-Type 10 Gbits/s EML Modules January 1999

4 Lucent Technologies Inc.

* Over 720 ps/nm (40 km version), 1440 ps/nm (80 km version).
†T

case

= 70 °C, T

laser chip

= 15 °C to 35 °C (E2560), 20 °C to 35 °C (E2580).

Modulator/Driver

Extinction Ratio ER

RF

Vin = 0.5 Vp-p to 1.0 Vp-p

10 Gbits/s (E2580)

V

m

= 0 V to –2.5 V

10 Gbits/s (E2560)

11 — dB

RF Return Loss (E2560)

(0 GHz to 6 GHz)

S

11

Vm = –1 V

If = I

op

10 — dB

RF Return Loss (E2560)

(6 GHz to 8 GHz)

S

11

Vm = –1 V

If = I

op

7—dB

RF Return Loss (E2560)

(8 GHz to 10 GHz)

S

11

Vm = –1 V

If = I

op

5—dB

–3 dB Bandwidth (E2560) BW V

m

= –1 V

If = I

op

11 — GHz

RF Return Loss (E2560)

(0 GHz to 10 GHz)

S

11

Vin = 0.5 Vp-p to 1.0 Vp-p

10 Gbits/s

10 — dB

Input Voltage (E2580)

(Peak to Peak)
(ac coupled input)

V

IN

—0.51.0V

Rise/Fall Time

(20%—80%)

tr/tf — — 40 ps

Monitor Diode

Monitor Current I

bd

V

bd

= 5 V

I

f

= I

op

40 1100

µ

A

Dark Current I

d

Vbd = 5 V — 0.1

µ

A

Capacitance C V

bd

= 5 V

f = 1 MHz

—25pF

Thermistor

Resistance R

therm

T = 25 °C 9.5 10.5 k

Ω

Thermistor Curr ent I

tc

—10100

µ

A
Thermistor B Constant B — 3700 4100 —
Thermoelectric Cooler
TEC Current I

TEC

†

—1.1A

TEC Voltage V

TEC

†

—2.6V

TEC Power P

TEC

†

—2.9W

TEC Capacity

∆

T

†

55 — C

Optical Isolation

Optical Isolation —

†

30 — dB

Package

Wavelength vs. Case Temp. dλ/ dT T

case

= –10 °C to 70 °C— 0.5pm/

°

C

Parameter Symbol Conditions Min Max Unit

Target Specifications

(continued)

Table 4. Optical and Electrical Specifications

(Chip operating temp. = 15 °C to 35 °C, except

where noted.)(continued)

Lucent Technologies Inc. 5

Advance Data Sheet
January 1999 E2560/E2580-Type 10 Gbits/s EML Modules

Outline Diagram

1-1006(F).r1

0.291
(7.38)

0.215
(5.47)

0.291
(7.384)

0.100

(2.54)

0.020

(0.508)

0.350
(8.89)

0.500
(12.7)

0.551

(13.99)

0.50

(12.7)

LEAD 7

LEAD 1

TRADEMARK CODE LASER SERIAL NUMBER
AND DATE CODE LABEL IN AREA SHOWN

BEND LIMITER

0.498

(12.64)

1.025

(26.04)

∅

0.106
(2.7)

0.190

(4.822)

E2560:

0.078
(1.98)

0.050
(1.27)

0.020
(0.51)

0.350
(8.89)

0.500
(12.7)

0.551

(13.99)

50

(12.7)

LEAD 13

LEAD 1

TRADEMARK CODE LASER SERIAL NUMBER
AND DATE CODE LABEL IN AREA SHOWN

BEND LIMITER

0.498

(12.64)

1.025

(26.04)

∅

0.106

(2.7)

0.190
(4.82)

E2580:

12 PLACES

CONNECTOR TYPE

AS SPECIFIED

1.180

(29.97)

2.032

(51.61)

0.820

(20.83)

TBD

0.56

(1.42)

0.365
(9.27)

0.180
(4.56)

0.030

(0.75)

0.228
(5.78)

0.98
(2.5)

0.260
(6.6)

0.200
(5.08)

0.078
(1.98)

0.010 ± 0.002
(0.25 ± 0.064)

MIN

3 PLACES

4 PLACES

PLACES

0.215

(5.45)

Advance Data Sheet
E2560/E2580-Type 10 Gbits/s EML Modules January 1999

For additional information, contact your Microelectronics Group Account Manager or the following:

INTERNET:

http://www.lucent.com/micro

, or for Optoelectronics information,

http://www.lucent.com/micro/opto

E-MAIL:

[email protected]

N. AMERICA: Microelectronics Group, Lucent Technologies In c., 555 U nion Boulevard, Room 30L-15P-BA, Allentown, PA 18103

1-800-372-2447

, FAX [phone] (In CANADA:

1-800-553-2448

, FAX [phone])

ASIA PACIFIC:Microelectronics Group, Lucent Technologies Singapore Pte. Ltd ., 77 Science Park Drive, #03-18 Cintech III, Singapore 118256

Tel. [phone]

, FAX [phone]

CHINA: Microelectronics Group, Lucent Technologies (China) Co., Ltd., A-F2, 23/F, Zao Fong Universe Building, 1800 Zhong Shan Xi Road,

Shanghai 200233 P. R. China

Tel. [phone], ext. 316

, FAX [phone]

JAPAN: Microelectronics Group, Lucent Technologies Japan Ltd., 7-18, Higashi-Gotanda 2-chome, Shinagawa-ku, Tokyo 141, Japan

Tel. [phone]

, FAX [phone]

EUROPE: Data Requests: MICROELECTRONICS GROUP DATALINE:

Tel. [phone]

, FAX [phone]

Technical Inquiries:OPTOELECTRONICS MARKETING:

(44) 1344 865 900

(Ascot UK)

Lucent Technologies Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. No
rights under any patent accompany the sale of any such product(s) or information. ST is a registered trademark of Lucent Technologies Inc.

Copyright © 1999 Lucent Technologies Inc.
All Rights Reserved

January 1999
DS99-078LWP

Printed On

Recycled Paper

Laser Safety Information

Class IIIb Laser Product
This product complies with 21 CFR 1040.10 and 1040.11.
Single-mode connector
Wavelength = 1.5 µm
Maximum power = 10 mW
Because of size constraints, laser safety labeling is not affixed to the module but attached to the outside of the ship-

ping carton.
Product is not shipped with power supply.

Caution

: Use of controls, adjustments, and procedures other than those specified herein may result in hazardous

laser radiation exposure.