Datasheet DU28200M Datasheet (MACOM)

an AMP company

RF MOSFET Power Transistor, 2OOW, 28V

2 - 175 MHz

Features

N-Channel Enhancemenr Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power

Lower Noise Figure Than Competitive Devices

Absolute Maximum Ratings at 25°C

Parameter

Drain-SourceVoltage ( V,, ( 65

I

Gate-Source Voltage
Drain-Source Current

I Power Dissipation

Junction Temperature
StorageTemperature
Thermal Resistance

I Symbol I

V

OS

‘DS

1 P, / 389 1 W 1

TJ

T

STG

Rating

20 V
20 A

200

-65 to +150

DU28200M

v2.00

P&--4 I

1 Units 1

I v I

“C
“C

Electrical Characteristics at 25°C

Parameter

Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current

1 Gate Threshold Voltage

FonvardTransconductance
Input Capacitance
Output Capacitance

( Reverse Capacitance

Power Gain
Drain Efficiency

Load MismatchTolerance

* Per Side

Specifications Subject to Change Without Notice.

BVDss 65 - V

‘cm
‘GSS

I vG,rr,,

GM

C

ISS

C

OSS

I CFSS

GP

%

VSWR-T -

Test Conditions

V,,=O.O V, I,,=250 mA

5.0 n-IA V,,=28.0 V, V,,=O.O V‘

5.0 pA

1 2.0 1 6.0 1 v I v,,=~o.ov, 1,,=500.0 mA

2.5 - S V,,=lO.O V, I,,=50 A, ~v,,=l .O V, 80~ Pulse’

- 225 pF
200 pF V,,=28.0 V, F=l .O MHz’

1 - ( 40 1 pF 1 V,,=28.0 V, F=l.O MHz’

13 -

55 - %

lo:1 -

v,,=20.0 v, V,stO.O v

Vr,,=28.0 V, F=l .O MHz’

V,,=28.0 V, I,,=1 000 mA, Pe~200.0 W, F=l75 MHz

dB

V,,=28.0 V. I,,=1 000 mA, P,,
V-,=28.0 V. I,,=1000 mA. P,,s200.0 W, F=175 MHz

-200.0 W, F=175 MHz

I

I

RF MOSFET Power Transistor, 2OOW, 28V

Typical Broadband Performance Curves

DU28200M

v2.00

EFFICIENCY vs FREQUENCY

30

10 -I

GAIN vs FREQUENCY

V&3 V l,o=lOO mA P,f200 W

-

6or

50

25 50 100 150 200 25 50

FREQUENCY (MHz)

POWER OUTPUT vs POWER INPUT

300

z 250

5

P 200
5

a 150

0

cl- 100

;

f

.

V,,=28 V IDp=l 000 mA

30 MHz

f

100 MHz

200 MHz

VDD=28 V I,,=1000 mA P,,=200 W

loo 150 200

FRECXJENCY (MHz)

50

0 0.5 1 2 3 4 5

POWER INPUT (W)

RF MOSFET Power Transistor, 2OOW, 28V DU28200M

v2.00

Typical Device Impedance

Frequency (MHz)

30
100
150

175

200

Z,N (OHMS)

2.7 - j 4.8 7.2 - j 1.9

1.6 -j 3.0 5.25 - j 1.4

1.5 -j 2.0 5.0 - j 0.7

1.6 -j 1.0 5.2 - j 0.6

1.8-j0.5 5.5 - j 0.5

Z

LOAD (OHMS)

V,,=28 V, I,,=1000 mA, P0,~200 Watts

Z,, is the series equivalent input impedance of the device from gate to source.
Z LOAD is the series optimum equivalent load impedance as measured from drain to drain.

RF Test Fixture

I

I

Specifications Subject to Change Without Notice.