Datasheet DU28120V Datasheet (MACOM)

RF MOSFET Power Transistor, 12OW, 28V

2 - 175 MHz

Features

l N-Channel Enhancement Mode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power

l Lower Noise Figure Than Competitive Devices

. .

Absolute Maximum Ratings at 25°C

DU2812OV

Electrical Characteristics at 25°C

Parameter

Drain-Source Breakdown Voltage

Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance

Input Capacitance

Output Capacitance

Reverse Capacitance
Power Gain
Drain Efficiency
Return Loss

Load Mismatch Tolerance

L

* Per side

Specifications Subject to Change Without Notke.

MIA-COM, Inc.

North America: Tel. [phone] D Asia/Pacific: Tel. [phone]

Fax [phone]

Symbol Min Max Units

BV,,, 65 - V V,,=O.O V, l,s=30.0 mA’

V,,=28.0 v, v,,=o.o V’
v,,=20.0 v, v,,=o.o V’

V,,=lO.O V, 1,,=6000.0 A, AV,,=l .O V, 80 us Pulse’

V,,=28.0 V, F=l .O MHz’
V,,=28.0 V, F=l .O MHz’
V,,=28.0 V, F=l .O MHz’

PF

V,,=28.0 V, I,,=600 mA, P,,,=120.0 W, F=175 MHz

dB

V,,=28.0 V, I,,=600 mA, P,,fl20.0 W, F=l7.5 MHz

%

V,,=28.0 V, I,,=600 mA, P,,,=120.0 W, F=175 MHz

%

V

C
C
C

’05s
‘GSS

GSfW

GM

ISS
oss
Rss

GP
‘1D
5

6.0 mA

6.0 pA

2.0

3.0 - S

13 ­60 ­10 -

6.0 V V,,=lO.O V, 1,,=600.0 mA’

270 pF
240 pF

48

VSWR-T - 3O:l - V,,=28.0 V, I,,=600 mA, P,e120.0 W, F=175 MHz

Fax [phone]

Test Conditions

Europe: Tel. [phone]

Fax [phone]

RF MOSFET Power Transistor, 12OW, 28V

Typical Broadband Performance Curves

DU2812OV

v2.00

5
s

z
d

GAIN vs FREQUENCY

25

20

15

10

0

V&z8 V I,,=600 mA P,,,=l20 W

50 150

FREQUENCY (MHz) FREQUENCY (MHz)

POWER OUTPUT vs POWER INPUT

140 -

I’,,=28 V I,,=600 mA

70

50

200 0

EFFICIENCY vs FREQUENCY

V,,=28 V I,,=600 mA P,,=l20 W

25 50 100

150 175 200

POWER OUTPUT vs SUPPLY VOLTAGE

F=175 MHz

I,,=600 mA P,,=3.0 W

A

20 L

0.1 0.2 0.3

Specifications Subject to Change Without Notice.

1 2 3 4

POWER INPUT(W)

North America: Tel. [phone]

Fax [phone]

I

5 6 7

n Asia/Pacific: Tel. [phone]

6 9

Fax [phone]

29 25

SUPPLY VOLTAGE (V)

30 33

M/A-COM, Inc.

Europe: Tel. [phone]

n

Fax [phone]

I

RF MOSFET Power Transistor, 12OW, 28V

Typical Device Impedance

DU2812OV

v2.00

Frequency (MHz)

30

100

175

) Z,,, (OHMS)

3.0 -j 12.5 ) 8.0 +j 6.0

1.5 - j 8.5

1.0 - j 6.0

V,,=28 V, I,,=.600 mA, PoUs=120 Watts

Z,, is the series equivalent input impedance of the device from gate to gate.
Z

LOAD is the optimum series equivalent load impedance as measured from drain to drain.

RF Test

Fixture

Z

LOAo (OHMS)

7.0 + j 6.5

6.5 + j 5.0

- ,.

WA-COM, Inc.

North America:

PARTS LIST

TRIMMER WPAC!ToR UCQF
CMAC~OR O.WlpF

TulHMER CAPACrrOR S-SGPF
CAPACrroR SSPF
CAPAcltoR SopF
ELEcTRcLs-Tx c4mcrOR loow=so VOLTS
o.so’xo.lo’TFucs ON mAuocv.,25’x ’02s LOOP
O.STXO.IO’TRACEON SOAR0

7.5 TURNS OF NO. 20 AWG COPPER WIRE X 0.31’
RESISTOR 13 OHMS 2 WATTS
REsKroR 10x ONMS
so WM SALUN CORES. 2 TURNS OF so ONM coAxTNRU
2srAcKPoLE~.I522

41 TRAMFORMER 2 TURNS OF 2 M ONM COAX TNRU

2 STACKPOLE 57.1S22 SAWN CORES
ou2s1m”
Flu 0.082

Specifications Subject to Change Without Notice.

Tel. [phone]

n Asia/Pacific: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

Europe: Tel. [phone]

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