Datasheet DTV32G-1500B Datasheet (SGS Thomson Microelectronics)

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MAINPRODUCTSCHARACTERISTICS

DTV32G-1500B

(CRT HORIZONTALDEFLECTION)

HIGH VOLTAGE DAMPER DIODE

I

F(AV)

V

RRM

V

(max)

F

6A

1500 V

1.5 V

FEATURESAND BENEFITS

HIGHBREAKDOWNVOLTAGECAPABILITY
HIGHFREQUENCY OPERATION
SPECIFIED TURN ON SWITCHING

CHARACTERISTICS
TYPICALTOTAL LOSSES:3.5 W

(I

= 6 A, F = 56 kHz)

Fpeak

SUITABLEWITHBUH TRANSISTORSSERIES
SMD PACKAGE

DESCRIPTION

High voltage diode especially designed for
horizontal deflection stage in standard and high
resolutiondisplaysfor TV’s andmonitors.

Thisdevice is packagedin D

2

PAK.

K

K

A

A

NC

D2PAK

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

I

F(RMS)

V

RRM

V

RWM

I

F(AV)

I

FSM

RMSforward current 15 A
RepetitivePeak ReverseVoltage 1500 V
ReverseWorking Voltage 1350 V
Averageforward currentδ= 0.5 Tc=130°C6 A
SurgeNon RepetitiveForwardCurrent tp = 10ms

100 A

sinusoidal

T

stg

T

j

November 1997 - Ed: 2

StorageTemperature - 40 to 150 °C
MaximumOperatingJunctionTtemperature 150

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DTV32G-1500B

THERMAL RESISTANCE

Symbol Parameter Value Unit

R

th(j-c)

Junctionto Case 2 °C/W

STATICELECTRICAL CHARACTERISTICS

Symbol TestConditions Min Typ Max Unit

I

R*

VR=V

RWM

Tj= 25°C 200
Tj= 100°C1mA

V

F**

IF=6A Tj= 25°C 1.5 V

Tj= 100°C 1.4

pulse test : * tp = 5 ms ,δ<2%

** tp = 380 µs, δ <2%

RECOVERYCHARACTERISTICS

Symbol TestConditions Min Typ Max Unit

t

(1) Tj = 25°CI

rr

t

rr

Tj = 25°CIF=1AI

=1 A dIF/dt = -50A/µsVR=30V 175 ns

F

=1 A dIF/dt = -15A/µsVR=30V 250

I

F

=100mA 140 ns

R

A

µ

TURN-ON SWITCHINGCHARACTERISTICS

Symbol Test Conditions Min Typ Max Unit

tfr(2) Tj = 100°CI

(2) 39 V

V

Fp

=6A dIF/dt= 80 A/µs

F

=2V

V

FR

0.6

(1)Test followingJEDEC standard
(2)Test representativeof the application

Toevaluate themaximum conductionlosses use the following equation:
V

= 1.2+ 0.034 I

F

F

P= 1.2 x IF(av)+ 0.034x I

F2(RMS)

s

µ

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

DTV32G-1500B

Fig. 1: Averageforward power dissipation versus

averageforwardcurrent.

T

=tp/T

tp

Fig. 3: Average current versus ambient

temperature.

Fig.2: Peakcurrent versus form factor.

=0.5

T

=tp/T

tp

Fig. 4: Nonrepetitive surge peak forward current

versusoverloadduration(maximumvalues).

IM

=0.5

T

=tp/T

tp

Fig. 5: Relative variation of thermal transient

impedancejunctiontocaseversuspulse duration.

=0.5

T

=0.5

Fig. 6: Forward voltage drop versus forward

current(maximumvalues).

=tp/T

tp

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

DTV32G-1500B

Fig. 7: Junction capacitance versus reverse

voltageapplied (typicalvalues).

Fig.9: Peakreversecurrent versus dI

F

/dt.

Fig.8: Recoverycharge versusdI

F

/dt.

Fig. 10: Dynamic parameters versus junction
temperature.

;

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Fig.12: Peakforward voltageversusdI



/dt.Fig.11: Recoverytime versusdIF/dt.

F

BASIC HORIZONTAL DEFLECTIONCIRCUIT

+V

TRANSFORMER
EHT

DTV32G-1500B

LINE YOKE

L

T

(BUH715)

(D=DAMPER DIODE DTV32-1500)

BASIC E-WDIODE MODULATOR CIRCUIT

+V

TRANSFORMER

EHT

C1

T

(BUH715)

C

D1

D

LINE YOKE

L

C2

D2

D1=DTV32-1500 D2=BYT08-400

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DTV32G-1500B

PACKAGEDATA

2

PAK

D

DIMENSIONS

REF.

A

E

L2

C2

A 4.30 4.60 0.169 0.181

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

R

V2

D

B 0.70 0.93 0.027 0.037

B2 1.25 1.40 0.049 0.055

C 0.45 0.60 0.017 0.024

C2 1.21 1.36 0.047 0.054

D 9.00 9.35 0.354 0.368
E 10.00 10.28 0.393 0.405

G 4.88 5.28 0.192 0.208

L 15.00 15.85 0.590 0.624

L

L3

A1

B2
B

G

2.0MIN.
FLATZONE

C

A2

L2 1.27 1.37 0.050 0.054
L3 1.40 1.75 0.055 0.069

R 0.40 0.016

V2 0° 8° 0° 8°

Marking:DTV32G-1500B
Coolingmethod : C.
Weight: 1.8g.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from itsuse. No
license is granted by implication orotherwise under anypatentor patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change without notice. This publicationsupersedesand replaces all informationpreviously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for use as critical componentsinlifesupport devices or systemswithoutexpress
writtenapproval of SGS-THOMSON Microelectronics.

 1997SGS-THOMSON Microelectronics - Printed in Italy -All rights reserved.

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