
DTDG14GP
Transistors
1A / 60V Digital Transistor
(with built-in resistor and zener diode)
DTDG14GP
zApplicat ions
Driver
zFeatures
1) High h
FE
.
300 (Min.) (V
CE
/ IC=2V / 0.5A)
2) Low saturation voltage,
(V
CE(sat)
=0.4V at IC / IB=500mA / 5mA)
3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
zStructure
NPN epitaxial planar silicon transistor
(with built-in resistor and zener diode)
zPackaging specifications
Part No.
DTDG14GP
Package
Packaging type Taping
Code
Basic ordering
unit (pieces)
MPT3
T100
1000
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Pw≤10ms, Duty cycle≤1/2
∗2 When mounted on a 40
×40×0.7 mm ceramic board.
Symbol Limits Unit
CBO
V
V
CEO
EBO
V
I
CP
P
Tj
Tstg
C
C
60
±
10 V
60±10
1I
2
0.5
2
150
−55 to +150
zExternal dimensions (Unit : mm)
(1)
ROHM : MPT3
EIAJ : SC-62
Abbreviated symbol : E01
zEquivalent circ uit
(1)
(1) : Base
(2) : Collector
(3) : Emitter
R
R=10kΩ
V
V5
A
∗1
∗2
A
W
°C
°C
4.5
1.6
(3)(2)
0.5
0.40.4
1.51.5
3.0
(2)
(3)
0.5
2.5
4.0
1.0
1.5
(1) Base
(2) Collector
(3) Emitter
0.4
Rev.A 1/2

Transistors
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Emitter-base resistance
Transition frequency
∗ Characteristics of built-in transistor
zElectrical characteristic curves
10
5
2
1
500m
200m
100m
50m
20m
10m
5m
COLLECTOR CURRENT : IC (A)
2m
1m
COLLECTOR TO EMITTER VOLTAGE : VCE (V
I
CP
DC
14W×18l×0.8t(Unit : mm)
When mounted on glass epoxy
∗Single pulse
1 2 5 100m 200m 500m 10 20 50 10
P
W
=100ms
P
Fig.1 Safe operating area
W
=
10ms∗
∗
Min.
Typ. Max. Unit Conditions
CBO
BV
BV
BV
I
CBO
I
EBO
VCE(sat)
h
10k
FE
500
200
100
DC CURRENT GAIN : h
50
−
CEO
50
−
EBO
5
−
−
−
300
−
−−
FE
300
R
f
T
∗
5k
2k
1k
50
20
10
10m 20m 50m 100m200m500m 1 2 5 1
COLLECTOR CURRENT : IC (A)
−
7
10
−
80
VCE=5V
Fig.2 DC current gain vs. collecto
current
70
70
−
0.5
580
0.4
−
13
−
VI
V
I
I
V
V
µA
V
µA
I
V
V
−
kΩ
V
MHz
DTDG14GP
C
=50µA
C
=1mA
E
=720µA
CB
=40V
EB
=4V
C/IB
=500mA/5mA
CE
=2V, IC=500mA
−
CE
=5V, IE=−0.1A, f=30MHz
10
Ta=25°C
2V
1V
(
5
CE(sat)
2
1
500m
IC/IB=200
200m
100m
50m
20m
10m
COLLECTOR SATURATION VOLTAGE : V
100
50
10m
20m 50m
100m
COLLECTOR CURRENT : IC (
200m 500m 1 1
25
Fig.3 Collector-emitter saturation
voltage vs. collector curren
Ta=25°C
A)
Rev.A 2/2

Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1