Page 1
Bias Resistor Transistor NPN Silicon
P b
Lead(Pb)-Free
BASE
DTD123Y
COLLECTOR
3
R 1
1
R 2
2
EMITTER
1
SOT-23
3
2
Absolute maximum ratings (T
= 25ºC)
A
Parameter Symbol Limits Unit
Supply voltage Vcc 50 V
Input voltage VIN 5~+12 V
Output current IC 500 mA
Power dissipation Pd 200 mW
Junction temperature Tj 150
Storage temperature Tstg 55~+150
Electrical characteristics (T
= 25ºC)
A
-
Parameter Symbol Min Typ Max Unit Conditions
Input voltage
VI(off) 0.3
I
V
Output voltage Vo(on) 0.1 0.3 V Io/II= 50 mA/2.5 mA
Input current I
I
Output current Io(off) 0.5 µA Vcc = 50V,V = 0V
Input resistance R
1
Resistance ratio R2/R
Transition frequency f
Transition frequency of the device
*
T
- -
- -
-
-
-
-
-
-
1.54 2.2 2.86 kΩ
1
3.6 4.5 5.5
-
200 MHZVCE = 10V,IE= -500m A,f = 100MHZ*
V
3.6 mA = 5V
-
-
Vcc = 5V,Io = 100µA
I
V
I
-
-
Am 02 = oI,V3.0 = oV2 )no(
Am 05=oI,V5 = oV65EF hniag tnerruc CD
DEVICE MARKING : F62
WEITRON
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1/3 25-Apr-08
Page 2
DTD123Y
WEITRON
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2/3
25-Apr-08
Page 3
DTD123Y
SOT
-23 Outline Dimensions
A
B
TOP VIEW
D
E
G
H
K
C
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Unit:mm
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
WEITRON
http://www.weitron.com.tw
3/3 25-Apr-08
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