Datasheet DTC144TUA Datasheet (ROHM)

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100mA / 50V Digital transistors (with built-in resistor)

DTC144TM / DTC144TE / DTC144TUA / DTC144TKA

 Applications Inverter, Interface, Driver

 Features

1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).

2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.

3)Only the on/off conditions need to be set for operation, making the device design easy.

 Structure NPN epitaxial planar silicon transistor (Resistor built-in type)

 Dimensions (Unit : mm)

DTC144TM

ROHM : VMT3

1.2

0.32

0.2

(3)

1.2

0.8

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : 06 Abbreviated symbol : 06

0.13

0.2

0.5

(1) Base (2) Emitter (3) Collector

DTC144TE

ROHM : EMT3

1.6

0.3

(3)

(2)

0.2

(1)

0.2

0.5

1.0

0.7

0.55

1.6

0.8

0.15

0.1Min.

(1) Emitter (2) Base (3) Colector

DTC144TUA

ROHM : UMT3 EIAJ : SC-70

 Inner circuit

B : Base C : Collector E : Emitter

R1=47kΩ

2.0

0.3

(3)

(1)

(2)

0.65

1.3

Abbreviated symbol : 06 Abbreviated symbol : 06

1.25

0.9

0.7

0.2

2.1

0.15

Each lead has same dimensions

0.1Min.

(1) Emitter (2) Base (3) Colector

DTC144TKA

ROHM : SMT3 EIAJ : SC-59

2.9

(3)

(2)

0.95 0.95

1.9

0.4

1.6

2.8

(1)

0.15

1.1

0.8

(1) Emitter (2) Base (3) Colector

0.3Min.

Each lead has same dimensions

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2009.06 - Rev.B

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 Packaging specifications

Package

VMT3

Packaging type TapingTaping Taping Taping

Part No.

Code Basic ordering

unit (pieces)

T2L

8000

3000

DTC144TM DTC144TE DTC144TUA DTC144TKA

−−

−

 Absolute maximum ratings (T a=25C)

Parameter Symbol

Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature

CBO

CEO

EBO

Tstg

 Electrical characteristics (Ta=25C)

Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency

Characteristics of built-in transistor

∗

Symbol

CBO

BV BV

CEO

EBO

CBO

EBO

CE(sat)

 Electrical characteristic curves

500

200 100

20 10

DC CURRENT GAIN : h

Ta=100°C

25°C

−40°C

5 2

1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR CURRENT : I

Fig.1 DC current gain vs. collector

current

VCE=5V

(A)

UMT3EMT3 SMT3

T106 3000

−

T146 3000

−

Limits

DTC144TEDTC144TM

DTC144TUA DTC144TKA 50 50

100

150 200

150

−55 to +150

Typ.

Min.

50 50

−

100

32.9

∗

−

(V)

500m

CE(sat)

200m 100m

50m

20m 10m

2m 1m

COLLECTOR SATURATION VOLTAGE : V

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

Max. Unit Conditions

−

0.5

0.3

600

61.1

−

V V V

μA μA

−

kΩ

MHz

−

250

Ta=100°C

25°C

−40°C

COLLECTOR CURRENT : I

Fig.2 Collector-emitter saturation

voltage vs. collector current

V I

C/IB

VCE

lC/lB=10

(A)

Unit

°C °C

50μA 1mA 50μA

=10V, I

V V

50V

5mA/0.5mA

5V, I

1mA

−

Data Sheet DTC144TM / DTC144TE / DTC144TUA / DTC144TKA

−

5mA, f=100MHz

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2009.06 - Rev.B

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Notes

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Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

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Notice

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