Datasheet DTC114GUA, DTC114GKA Datasheet (ROHM)

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100mA / 50V Digital transistors

(with built-in resistor)

DTC114GUA / DTC114GKA

 Applications  Dimensions (Unit : mm) Inverter, Interface, Driver

 Features

1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated.

2) Only the on / off conditions need to be set for operation, making the device design easy.

3) Higher mounting densities can be achieved.

 Structure NPN epitaxial planar silicon transistor (Resistor built-in type)

 Packaging specifications

Part No.

DTC114GUA

DTC114GKA

Package Packaging type

Code Basic ordering unit (pieces)

UMT3

Taping

T106

3000

SMT3

Taping

T146

3000

−

 Absolute maximum ratings (Ta=25C)  Inner circuit

Parameter Symbol

Collector-base voltage Collector-emitter voltage

Emitter-base voltage

Collector current

Collector Power dissipation

Junction temperature

Storage temperature

CBO

CEO

EBO

Tstg

Limits

100

200 150

−55 to +150

Unit

V V

°C

DTC114GUA

ROHM : UMT3 EIAJ : SC-70

DTC114GKA

ROHM : SMT3 EIAJ : SC-59

E : Emitter C : Collector B : Base

R=10kΩ

2.0

0.3

(3)

(1)

(2)

0.65

1.3

Abbreviated symbol : K24

2.9

0.4

(3)

(2)

0.95 0.95

(1)

1.9

Abbreviated symbol : K24

0.9

0.7

0.2

2.1

1.25

0.15

Each lead has same dimensions

1.1

0.8

1.6

2.8

0.15

Each lead has same dimensions

(1) Emitter (2) Base

0.1Min.

(3) Collector

(1) Emitter (2) Base

0.3Min.

(3) Collector

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2009.06 - Rev.C

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 Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current

transfer ratio

Emitter-base resistance

Transition frequency

Characteristics of built-in transistor

∗

 Electrical characteristic curves

=5V

500

200

100

DC CURRENT GAIN : hFE

1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

Ta=25°C

COLLECTOR CURRENT : I

Ta=100°C

Ta= −40°C

(A)

Fig.1 DC current gain vs. Collector current

CBO

CEO

EBO

CBO

EBO

CE(sat)

−

300

−

∗

IC/I

=20/1

(V)

500m

CE(sat)

200m

100m

50m

20m

10m

COLLECTOR SATURATION VOLTAGE : V

100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m

COLLECTOR CURRENT : I

−

250

Ta=25°C

−

0.5

580

0.3

−

Ta=100°C

Ta= −40°C

(A)

Fig.2 Collector-Emitter saturation voltage vs. Collector current

μA

−

kΩ

MHz

=50μA

=1mA

=720μA

=10mA, IB=0.5mA

=5mA, VCE=5V

Data Sheet DTC114GUA / DTC114GKA

=50V

=4V

−

=10V, IE= −5mA, f=100MHz

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2009.06 - Rev.C

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Notes

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