Datasheet DTC044EUB Datasheet (ROHM)

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©2011 ROHM Co., Ltd. All rights reserved.

100mA/50V Digital transistors(with built-in resistors)

DTC044EM / DTC044EEB / DTC044EUB

Features Dimensions (Unit : mm)

1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See equivalent circuit)

2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.

3) Only the on/off conditions need to be set for operation,
making the device design easy.

VMT3

Abbreviated symbol : 41

EMT3F

(3)

Structure

NPN epitaxial planar silicon transistor
(Resistor built-in type)

Applications

Inverter, Interface, Driver

Packaging specifications

Package VMT3 EMT3F

UMT3F

Equivalent circuit

Packaging Type Taping Taping Taping

Type

DTC044EM
DTC044EEB

Code T2L TL

Basic ordering
unit (pieces)

8000 3000 3000

○

-○

DTC044EUB - -

--

TL

-

○

R

Absolute maximum (Ta=25C)

Parameter Symbol

Supply voltage

Input voltage

Collector current *1
Output current
Power dissipation *2

V

V

I

C(max)

I

P

CC

IN

O

D

Limits(DTC044E□)

MEB UB

50 V
40 V

-10 V

100 mA

30 mA

150 200
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150

*1　Characteristics of built-in transistor

*2 Each terminal mounted on a reference land

UMT3F

IN

2.1

IN

1=R2

0.4250.425

1.25

(1) (2)

Abbreviated symbol : 41

2.0

0.32

(3)

(1) (2)

0.65 0.65

1.3

Abbreviated symbol : 41

R

1

R

2

GND

=47kΩ

0.9

0.530.53

0.13

OUT

GND

OUT

Unit

mW

C
C

1/2

2011.08 - Rev.A

DTC044EM / DTC044EEB / DTC044EUB

Electrical characteristics (Ta=25C)

Parameter Min. Typ. Test Conditions
Input voltage
Output voltage - 0.05

Input current - ­Output current - ­DC current gain 80 -

Transition frequency * - 250
Input resistance 32.9 47

Resistance ratio 0.8 1.0

* Characteristics of built-in transistor

Electrical characteristics curves

Symbol Max. Unit

V
V

V

I

R

I(off)
I(on)

O(on)

I

I

O(off)

G

f

T

R

2/R1

I

1

--

3.0 -

0.8 V

-V

0.15 V

0.18 mA
500 nA

--

- MHz

61.1

1.2 -

V

=5V / IO=100uA

CC

VO=0.3V / IO=2mA
IO=5mA / II=0.5mA
VI=5V
VCC=50V / VI=0V
VO=10V / IO=5mA
V

=10V /IE=-5mA

CE

f=100MHz

k

Data Sheet

100

Vo=0.3V

(V)

I(on)

INPUT VOLTAGE : V

Ta=-40ºC

10

Ta=25ºC
Ta=75ºC

Ta=125ºC

1

0.1

0.1 1 10 100
OUTPUT CURRENT : I

(mA)

O

Input Voltage vs. Output Current (ON characteristics)

1000

Vo=10V

I

100

Ta=125ºC
Ta=75ºC
Ta=25ºC

10

DC CURRENT GAIN : G

1

0.1 1 10 100
OUTPUT CURRENT : I

Ta=-40ºC

(mA)

O

10

VCC=5V

1

(mA)

O

0.1

0.01

OUTPUT CURRENT : I

0.001
0 0.5 1 1.5 2 2.5 3

INPUT VOLTAGE : V

Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC

(V)

I(off)

Input Voltage vs. Output Current (OFF characteristics)

1

(V)

O(on)

0.01

OUTPUT VOLTAGE : V

0.001

IO/II=10

0.1

Ta=125ºC

Ta=75ºC
Ta=25ºC

Ta=-40ºC

0.1 1 10 100
OUTPUT CURRNET : I

(mA)

O

DC Current Gain vs. Output Current Output Voltage vs. Output Current

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2/2

2011.08 - Rev.A

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