Page 1
DTC8-N
Ordering number : EN1877C
8A Bidirectional Thyristor
Silicon Planar Type
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O0797GI/3109MO, TS No.1877-1/3
Features
• Peak OFF-state voltage : 200 to 600V
• RMS ON-state current : 8A
• TO-220 package.
Absolute Maximum Ratings at Ta=25°C DTC8C-N DTC8E-N DTC8G-N unit
Repetitive Peak V
DRM
200 400 600 V
OFF-StateVoltage
RMS ON-State Current I
T(RMS)
Tc=105°C, single-phase →→ 8A
full-wave
Surge ON-State Current I
TSM
Peak 1 cycle, 50Hz →→ 80 A
Amperes Squared-Seconds ∫ i2T·dt 1ms≤t≤10ms →→ 32 A2s
Peak Gate Power Dissipation P
GM
f≥50Hz, duty≤10% →→ 5W
Average Gate Power Dissipation P
G(AV)
→→ 0.5 W
Peak Gate Current I
GM
f≥50Hz, duty≤10% →→ ±2 A
Peak Gate Voltage V
GM
f≥50Hz, duty≤10% →→±10 V
Junction Temperature Tj →→125 °C
Strage Temperature Tstg → –40 to +125 °C
Weght →→ 1.8 g
Electrical Characteristics at Ta=25°C min typ max unit
Repetitive Peak I
DRM
Tj=125°C, VD=V
DRM
2mA
OFF-State Current
Peak ON-State Voltage V
TM
ITM=12A 1.5 V
Critical Rate of Rise of dv/dt Tj=125°C, VD=200V (C), 10 V/µs
OFF-State Voltage 400V (E to G)
Holding Current I
H
RL=100Ω 50 mA
Gate Trigger Current* (I) I
GT
VD=12V, RL=20Ω 30 mA
(II) I
GT
VD=12V, RL=20Ω 30 mA
(III) I
GT
VD=12V, RL=20Ω 50 mA
(IV) I
GT
VD=12V, RL=20Ω 30 mA
Gate Trigger Voltage* (I) V
GT
VD=12V, RL=20Ω 2V
(II) V
GT
VD=12V, RL=20Ω 2V
(III) V
GT
VD=12V, RL=20Ω 2V
(IV) V
GT
VD=12V, RL=20Ω 2V
Gate Nontrigger Voltage V
GD
Tc=125°C, VD=V
DRM
0.2 V
Thermal Resistance Rth(j-c) Between junction and case, AC 2 °C/W
* : The gate trigger mode is shown below.
Trigger mode T2 T1 G
I + – +
II + – –
III – + +
IV – + –
Package Dimensions 1155A
(unit : mm)
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DTC8-N
No.1877-2/3
ON-State Voltage, VT– V
ON-State Current, I
T
– A
Cate Current, IG– A
Gate Voltage, V
G
– V
RMS ON-State Current, I
T(RMS)
– A
Average ON-State Power Dissipation, P
T
(AV) – W
RMS ON-State Current, I
T(RMS)
– A
Maximum Allowable
Ambient Temperature, Ta max – °C
Cate Current, IG– A
Gate Voltage, V
G
– V
Number of Cycles at 50Hz, n
Surge ON-State Current, I
TSM
– A
RMS ON-State Current, I
T(RMS)
– A
Maximum Allowable
Case Temperature, Tc max – °C
Case Temperature, Tc – °C
Gate Trigger Current, I
GT
– mA
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DTC8-N
No.1877-3/3
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of October, 1997. Specifications and information herein are subject
to change without notice.
Case Temperature, Tc – °C
Gate Trigger Current, I
GT
– V
Time, t – ms
Transient Thermal Impedance, Rth(j-c) – °C/W
Gate Trigger Pulse Width, tw – µs
I
GT
(tw) / I
GT
– %
Case Temperature, Tc – °C
Holding Current, I
H
– mA
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