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DTA114GUA / DTA114GKA / DTA114GSA
Transistors
Digital transistors (built-in resistor)
DTA114GUA / DTA114GKA / DTA114GSA
!!!!Features
1) The built-in bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
2) Only the on / off conditions need to be set for operation,
making device design easy.
3) Higher mounting densities can be achieved.
!!!!Equivalent circuit
B
E : Emitter
C : Collector
B : Base
R
C
E
!!!!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power
dissipation
DTA114GUA / DTA114GKA
DTA114GSA
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
Pc
Tj
Tstg
C
Limits
−50
−50
−5
−100
200
300
150
−55 to +150
!!!!Package, marking, and packaging specifications
Type DTA114GUA
Package
Marking
Packaging code
Basic ordering unit (pieces)
UMT3
K14
T106
3000
DTA114GKA
SMT3
K14
T146
3000
DTA114GSA
SPT
−
TP
5000
!!!!External dimensions (Unit: mm)
DTA114GUA
ROHM : UMT3
EIAJ : SC-70
DTA114GKA
0.4
Unit
V
V
ROHM : SMT3
EIAJ : SC-59
V
DTA114GSA
ROHM : SPT
EIAJ : SC-72
3
)
15Min.
(
(1) (2) (3)
mA
mW
°C
°C
)
1
(
0.65
)
2
)
(
3
(
0.3
0.15
0.1Min.
)
3
(
0.15
0.3Min.
42
3Min.
0.45
2.5
5
0.65
1.25
2.1
0.2
0.7
Each lead has same dimensions
0~0.1
(1) Emitter
(2) Base
(3) Collector
)
1
(
)
2
(
0.95 0.95
1.6
2.8
0.8
0.1
~
Each lead has same dimensions
0
(1) Emitter
(2) Base
(3) Collector
0.45
0.5
Taping specifications
(1) Emitter
(2) Collector
(3) Base
2.0
1.3
0.9
1.9
2.9
1.1
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DTA114GUA / DTA114GKA / DTA114GSA
Transistors
!!!!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗Transition frequency of the device.
!!!!Electrical characteristics curves
Ta=25˚C
V
O
=5V
500
FE
200
100
50
20
10
DC CURRENT GAIN : h
5
2
0.5 2 51 10 20 50 100
COLLECTOR CURRENT : I
Fig.1 DC Current gain
vs. Collector Current
BV
BV
BV
V
−50 −−VIC= −50µA
CBO
−50 −−V
CEO
−5 −−V
EBO
I
I
CE(sat)
c
−−−0.5 µA
CBO
−300
EBO
−−−0.3 V
30
FE
713kΩ
1
f
− 25010− MHz
T
(mA)
−−580 µA
−−
I
= −1mA
C
I
= −720µA
E
V
= −50V
CB
V
= −4V
EB
I
= −10mA, IB= −0.5mA
C
= −5mA, VCE= −5Vh
−
I
C
−R
V
= −10V, IE=50mA, f=100MHz
CE
1000
Ta=25˚C
500
(sat)(mV)
CE
200
100
50
20
10
1 2 5 10 20 50 100
COLLECTOR SATURATION VOLTAGE: V
IC / IB=20 / 1
IC / IB=10 / 1
COLLECTOR CURRENT : V
Fig.2 Collector-emitter saturation voltage
vs. Collector Current
∗
DS
(V)
2/2
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Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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