Datasheet DT456P Datasheet (DIODS)

Features

High Cell Density DMOS Technology

·

Low On-State Resistance

·

High Power and Current Capability

·

Fast Switching Speed

·

High Transient Tolerance

·

Mechanical Data

· SOT-223 Plastic Case

· Terminal Connections: See Outline Drawing

and Internal Circuit Diagram Above

C D

J

DT456P

P-CHANNEL ENHANCEMENT MODE

FIELD EFFECT TRANSISTOR

SOT-223

Dim Min Max

A

B

D

G

K

S

E

G

H

L

M

P

R

N

S

All Dimensions in mm

A

B

C

D

E

G

H

J

K

L

M

N

P

R

S

6.30 6.71

2.90 3.10

6.71 7.29

3.30 3.71

2.22 2.35

0.92 1.00

1.10 1.30

1.55 1.80

0.025 0.102

0.66 0.79

4.55 4.70

— 10°

10° 16°

0.254 0.356

10° 16°

Maximum Ratings

Drain-Source Voltage

Gate-Source Voltage

Drain Current Note 1a Continuous

Maximum Power Dissipation Note 1a

Operating and Storage Temperature Range

25°C unless otherwise specified

Characteristic Symbol Value Unit

Pulsed

Note 1b Note 1c

Thermal Characteristics

Characteristic Symbol Value Unit

Thermal Resistance, Junction-to-Ambient Note 1

Thermal Resistance, Junction-to-Case

Notes: 1. R the solder mounting surface of the drain pins. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as

QJA

1a. With 1 in 1b. With 0.0066 in2oz 2 oz. copper mounting pad R 1c. With 0.0123 in2oz 2 oz. copper mounting pad R

2

oz 2 oz. copper mounting pad R

V

DSS

V

GSS

I

D

P

d

T

j,TSTG

R

QJA

R

QJC

is guaranteed by design while R

QJC

QJA = 42°C/W.

QJA = 95°C/W.

QJA = 110°C/W.

-30 V

±20 V

±7.5

±20

3.0

1.3

1.1

-65 to +150 °C

42 °C/W

12 °C/W

is determined by the user’s board design.

QCA

A

W

DS11614 Rev. C-4 1 of 4 DT456P

Electrical Characteristics

25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

T

j

= 70°C

Gate-Body Leakage, Forward

Gate-Body Leakage, Reverse

BV

I

GSSF

I

GSSR

DSS

-30 — — V

——

— — 100 nA

— — -100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

T

= 125°C

J

V

GS(th)

-1.0

-0.5

Static Drain-Source On-Resistance

—

-20

-10

—13— m

On-State Drain Current

Forward Transconductance

= 125°C

T

j

R

DS (ON)

I

D(ON)

g

FS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

ISS

C

OSS

C

RSS

— 1440 — pF

— 905 — pF

— 355 — pF

SWITCHING CHARACTERISTICS (Note 2)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

t

D(ON)

t

D(OFF)

t

Q

—1020ns

r

— 65 120 ns

— 70 130 ns

f

g

gs

gd

— 70 130 ns

—4767nC

— 5.0 — nC

—12—nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Max Continuous Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

I

S

V

SD

t

rr

— — -2.5 A

— -0.85 -1.2 V

— — 140 ns

-1.5

-1.1

0.026

0.035

0.041

-1.0

-10

3.0

-2.6

0.03

0.054

0.045

µA

V

W

—— A

= 0V, ID= -250µA

V

GS

VDS = -24V, V

= 20V, VDS= 0V

V

GS

= -20V, VDS= 0V

V

GS

V

DS=VGS

= -10V, ID= -7.5A

V

GS

V

= -10V, ID= -7.5A

GS

V

= -4.5V, ID= -6.0A

GS

= -10V, VDS= -5.0V

V

GS

V

= -4.5V, VDS= -5.0V

GS

= -10V, ID= -7.5A

V

DS

V

= -15V, VGS= 0V

DS

f = 1.0MHz

V

= -15V, ID= -7.0A

DD

V

= -10V, R

GEN

V

= -10V. ID= -7.5A.

DS

V

= -10V

GS

= 0V, IS= -2.5A (Note 2)

V

GS

= 0V, IF= -2.5A

V

GS

dl

/dt = 100A/µs

p

= 0V

GS

, ID= -250µA

GEN

= 12W

Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.

DS11614 Rev. C-4 2 of 4 DT456P

-

20

g

4

C

(

)

O

e

-16

V = -10V

GS

-6.0

-5.0

-4.5

-4.0

-3.5

3.0

ANCE

2.5

N-RESIST

V = -3.5V

GS

-4.0

-12

-8

-4

D

I , DRAIN-SOURCE CURRENT (A)

0

1.5

ANCE

1.25

N-RESIST

-3.0

-2.5

-1 -2 -3

V , DRAIN-SOURCE VOLTAGE (V)

DS

. 1, On-Region Characteristics

Fi

I = -7.5A

D

V = -10V

GS

2.0

URCE

-4.5

-5.0

1.5

1.0

RMALIZED DRAIN-S

0.5 0 -4 -8 -12 -16 -20

DS(ON)

R,N

I , DRAIN CURRENT (A)

D

Fig. 2, On-Resistance vs Drain Current and Gate Voltag

-20

V = -10V

DS

T = -55 C

J

-16

A

-6.0

-10

125

25

-12

URCE

1.0

URRENT

-8

D

0.75

I , DRAIN

-4

RMALIZED DRAIN-S

0.5

DS(ON)

R,N

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

j

Fig. 3, On-Resistance vs Temperature

0

-0.8 -1.6 -2.4 -3.2 -

V , GATE TO SOURCE VOLTAGE (V)

GS

Fig. 4, Transfer Characteristics

DS11614 Rev. C-4 3 of 4 DT456P

30

C

(

)

O

100 s

10

DS(ON)

R LIMIT

A

100ms

1ms

10ms

1.0

D = 0.5

0.2

1.0

URRENT

0.1

D

-I , DRAIN

V = -10V

GS

SINGLE PULSE

R = See Note 1c

qJA

T = 25 C

A

10s

dc

0.01

0.1 1.0 10 50

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 5, Maximum Safe Operating Area

0.1

RMALIZED EFFECTIVE

0.01

r(t), N

TRANSIENT THERMAL RESISTANCE

0.1

0.05

0.02

0.01

Single Pulse

R (t) = r(t) b R

QJA QJA

R = See Note 1c

QJA

P

(pk)

t

1

t

2

T - T = P b R (t)

J A PK QJA

Duty Cycle, D = t /t

12

0.001

0.0001 0.001 0.01 0.1 1.0 10 100

t , SQUARE WAVE PULSE DURATION (seconds)

1

1000 3000

Fig. 6, Typical Normalized Transient Thermal Impedance Curves

Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design.

DS11614 Rev. C-4 4 of 4 DT456P