Datasheet DT452AP Datasheet (DIODS)

Features

High Cell Density DMOS Technology

·

Low On-State Resistance

·

High Power and Current Capability

·

Fast Switching Speed

·

High Transient Tolerance

·

Mechanical Data

· SOT-223 Plastic Case

· Terminal Connections: See Outline Drawing

and Internal Circuit Diagram Above

C D

J

DT452AP

P-CHANNEL ENHANCEMENT MODE

FIELD EFFECT TRANSISTOR

SOT-223

A

B

D

D

G

E

K

S

G

H

L

M

P

N

S

Dim Min Max

6.30 6.71

A

2.90 3.10

B

6.71 7.29

C

3.30 3.71

D

2.22 2.35

E

0.92 1.00

G

1.10 1.30

H

1.55 1.80

J

R

0.025 0.102

K

0.66 0.79

L

4.55 4.70

M

— 10°

N

10° 16°

P

0.254 0.356

R

10° 16°

S

All Dimensions in mm

Maximum Ratings

Drain-Source Voltage

Gate-Source Voltage

Drain Current Note 1a Continuous

Maximum Power Dissipation Note 1a

Operating and Storage Temperature Range

25°C unless otherwise specified

Characteristic Symbol Value Unit

Pulsed

Note 1b
Note 1c

Thermal Characteristics

Characteristic Symbol Value Unit

Thermal Resistance, Junction-to-Ambient Note 1

Thermal Resistance, Junction-to-Case

Notes: 1. R

design.

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as

QJA

the solder mounting surface of the drain pins. R

1a. With 1 in
1b. With 0.066 in2oz 2 oz. copper mounting pad R
1c. With 0.0123 in2oz 2 oz. copper mounting pad R

2

oz 2 oz. copper mounting pad R

V

DSS

V

GSS

I

D

P

d

T

j,TSTG

R

QJA

R

QJC

is guaranteed by design while R

QJC

QJA = 42°C/W.

QJA = 95°C/W.

QJA = 110°C/W.

-30 V

-20 V

-5.0

-15

3.0

1.3

1.1

-65 to +150 °C

42 °C/W

12 °C/W

is determined by the user’s board

QCA

W

A

DS11611 Rev. C-4 1 of 4 DT452AP

Electrical Characteristics

25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

T

j

= 55°C

Gate-Body Leakage, Forward

Gate-Body Leakage, Reverse

BV

I

I

GSSF

I

GSSR

DSS

DSS

-30 — — V

——

— — 100 nA

— — -100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

T

= 125°C

j

Static Drain-Source On-Resistance

= 125°C

T

j

On-State Drain Current

Forward Transconductance

V

GS(th)

V

GS(th)

R

DS (ON)

R

DS (ON)

R

DS (ON)

I

D(ON)

g

-1.0

-0.7

—
—
—

-15

-5.0

FS

— 7.0 — m

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

ISS

C

OSS

C

RSS

— 690 — pF

— 430 — pF

— 160 — pF

SWITCHING CHARACTERISTICS (Note 2)

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

t

D(ON)

t

t

D(OFF)

t

Q

Q

Q

— 9.0 20 ns

r

—2030ns

—4050ns

f

g

gs

gd

—1940ns

—2230nC

— 3.2 — nC

— 5.2 — nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Max Continuous Drain-Source Diode
Forward Current

Drain-Source Diode Forward Voltage

I

S

V

SD

— — -2.5 A

— -0.85 -1.2 V

-1.6

-1.2

0.052

0.075

0.085

-1.0

-10

-2.8

-2.2

0.065

0.13

0.10

µA

V

W

—— A

= 0V, ID= -250µA

V

GS

VDS = -24V, V

= 20V, VDS= 0V

V

GS

= -20V, VDS= 0V

V

GS

V

DS=VGS

= -10V, ID= -5.0A

V

GS

V

= -10V, ID= -5.0A

GS

V

= -4.5V, ID= -4.3A

GS

= -10V, VDS= -5 .0V

V

GS

V

= -4.5V, VDS= -5 .0V

GS

= -10V, ID= -5.0A

V

DS

V

= -15V, VGS= 0V

DS

f = 1.0MHz

V

= -10V, ID= -1.0A

DD

V

= -10V, R

GEN

V

= -10V. ID= -5.0A.

DS

V

= -10V

GS

= 0V, IS= -2.5A (Note 2)

V

GS

= 0V

GS

, ID= -250µA

GEN

= 6.0W

Notes: 2. Pulse Test: Pulse width l 300 µs, duty cycle l 2.0%.

DS11611 Rev. C-4 2 of 4 DT452AP

-

20

g

6

O

O

O

t

-15

V = -10 V

GS

-6.0

-5.0

-4.5

3.0

ANCE

2.5

N-RESIST

V = -3.5 V

GS

-4.0

-4.5

D

I , DRAIN-SOURCE CURRENT (A)

-10

1.6

1.4

1.2

-5

0

0

I = -5.0A

D

V = -10 V

GS

-4.0

-3.5

-3.0

-1

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fi

. 1, On-Region Characteristics

-2 -3 -4

2.0

URCE

-5.0

1.5

1.0

RMALIZED DRAIN-S

0.5

DS(ON)

R,N

0

-4 -8 -12 -16 -20

I , DRAIN CURRENT (A)

D

Fig. 2, On-Resistance vs Gate Voltage & Drain Curren

V = -10 V

DS

T = -55 C

j

125 C

20

25 C

15

-6.0

-10.0

10

D

5

I , DRAIN CURRENT (A)

0

-1 -2 -3 -4 -5 -

V , GATE TO SOURCE VOLTAGE (V)

GS

Fig.4,Transfer Characteristics

1.0

0.8

0.6

DS(ON)

R , NORMALIZED DRAIN-SOURCE ON-RESISTANCE

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

j

Fig. 3, On-Resistance vs Junction Temperature

DS11611 Rev. C-4 3 of 4 DT452AP

10

30

g

O

100 s

1ms

1.0

D = 0.5

D

-I , DRAIN CURRENT (A)

DS(ON)

R Limit

10 ms

100 ms

1.0

1s

10 s

dc

0.1

V = -10 V

GS

Single Pulse
R = See Note 1c

QJA

T = 25 C

A

0.01

0.1 1.0 10 50

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fi

. 5, Maximum Safe OperatingArea

0.1

RMALIZED EFFECTIVE

0.01

r(t), N

TRANSIENT THERMAL RESISTANCE

0.001

0.2

0.1

0.05

0.02

0.01

Single Pulse

R (t) = r(t) b R

QJA QJA

R = See Note 1c

QJA

P

(pk)

0.0001 0.001 0.01 0.1 1.0 10 100

t , SQUARE WAVE PULSE DURATION (seconds)

1

Fig. 6, Typical Normalized Transient Thermal Impedance Curves

Remark: Thermal characterization performed under conditions
described in note 1c. Transient thermal response will change
depending on the circuit board design.

t

1

t

2

T - T = P b R (t)

J A PK QJA

Duty Cycle, D = t /t

12

1000 3000

DS11611 Rev. C-4 4 of 4 DT452AP