Page 1
DSSK48-003B
V
V
A
j
V
V
Schottky Diode
High Performance Schottky Diode
=
I
=
= 0.35
2x
30
25
Low Loss and Soft Recovery
Common Cathode
Part number
DSSK48-003B
Features / Advantages:
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
Symbol Definition
V
RRM
I
R
V
F
I A
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
C
J
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
unction capacitance
for power loss calculation only
Applications:
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
Conditions Unit
VR=
V
I
IF=A40
I
I
rectangular 0.5
t = 10 ms
V= V;5T
1 2 3
V°C=
30
=
R
F
F
F
R
V30
=A
20
=A
20
=A40
T
VJ
T
VJ
T
VJ
T
=°C
VJ
=°C
T
VJ
= 130 °C
T
d =
C
TVJ= 150 °C
C
T
(50 Hz), sine
f = 1 MHz = °C25
= 45°C
VJ
VJ
Backside: cathode
Package:
● Housing:
TO-220
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
R a t i n g s
typ. max.
min.
°C=25
25
°C=mA
100
25
30
20
60
0.44
mA
0.54
125
0.35
0.48
25
0.19
m
6.8
1.20
K/W
25
-55
°C=
150
105
°C
WT
300
1.77 nF
V
V
V
V
V
V
Ω
A
IXYS reserves the right to change limits, conditions and dime nsions. 20100209a
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
Page 2
DSSK48-003B
)
Ratings
Symbol Definition
I
R
T
RMS
stg
thCH
RMS current
thermal resistance case to heatsink
storage temperature
per pin
1
Weight g2
M
D
F
C
1)
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
RMS
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
mounting torque
mounting force with clip
Product Marking
typ. max.min.Conditions
35
-55
0.4
20
Unit
A
K/W0.50
°C150
Nm0.6
N60
Marking on product
Logo
DateCode
Assembly Code
abcdef
YYWW
XXXXXX
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DSSK48-003B 484008Tube 50
Similar Part Package
DSSK48-003BS
DSSK48-0025B
Marking on Product
DSSK48-003B
TO-263AB (D2Pak)
TO-220AB (3)
Voltage class
30
25
IXYS reserves the right to change limits, conditions and dime nsions. 20100209a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
Page 3
DSSK48-003B
Outlines
D
G
J
TO-220
C
L
Dim. Millimeter Inches
M
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
F
N
E
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
B
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H
A
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
Q
K
R
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
IXYS reserves the right to change limits, conditions and dime nsions. 20100209a
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
Page 4
DSSK48-003B
I
[A]
I
F(AV)
[A]
40
30
=
F
20
T
VJ
150°C
125°C
25°C
10
0.0 0.2 0.4 0.6
V
F
Fig. 1 Maximum forward voltage
drop characteristics
40
20
[V]
d=0.5
DC
10000
I
R
[mA]
P
(AV)
[W]
1000
TVJ=150°C
100
125°C
100°C
10
75°C
1
50°C
0.1
25°C
0.01
0102030
V
[V]
R
Fig. 2 Typ. reverse current
vs. reverse voltage V
I
R
16
12
8
4
d =
DC
0.5
0.33
0.25
0.17
0.08
10000
C
T
1000
TVJ=25°C
[pF]
100
0102030
V
[V]
R
Fig. 3 Typ. junction capacitance
C
R
vs. reverse voltage V
T
R
Z
thJC
[K/W]
0
0 40 80 120 160
T
[°C]
C
Fig. 4 Average forward current
I
vs. case temperature T
F(AV)
0
010203040
I
[A]
F(AV)
Fig. 5 Forward power loss
C
characteristics
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1 10 100 1000 10000
t [ms]
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
IXYS reserves the right to change limits, conditions and dime nsions. 20100209a
Data according to IEC 60747and per diode unless otherwise specified
© 2010 IXYS all rights reserved
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