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© 2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
TO-220 TO-263
V V
900 800 DSI 30-08A DSI 30-08AS
1300 1200 DSI 30-12A DSI 30-12AS
1500 1400 DSI 30-14A DSI 30-14AS
1700 1600 DSI 30-16A DSI 30-16AS
Symbol Conditions Characteristic Values
I
R
TVJ= T
VJM
; VR = V
RRM
£ 1mA
V
F
IF= 45 A; TVJ = 25°C £ 1.45 V
V
T0
For power-loss calculations only 0.85 V
r
T
TVJ= T
VJM
13 mW
R
thJC
DC current 1.0 K/W
V
RRM
= 800-1600 V
I
F(AV)M
= 30 A
Symbol Conditions Maximum Ratings
I
F(AV)M
TC= 95°C; 180° sine 30 A
I
FSM
TVJ= 45°C; t = 10 ms (50 Hz), sine 300 A
VR= 0 V; t = 8.3 ms (60 Hz), sine 330 A
T
VJ
= 150°C; t = 10 ms (50 Hz), sine 270 A
VR= 0 V; t = 8.3 ms (60 Hz), sine 300 A
I
2
t TVJ= 45°C; t = 10 ms (50 Hz), sine 450 A2s
VR= 0 V; t = 8.3 ms (60 Hz), sine 460 A2s
TVJ= 150°C; t = 10 ms (50 Hz), sine 365 A2s
VR= 0 V; t = 8.3 ms (60 Hz), sine 380 A2s
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+150 °C
M
d
Mounting torque 0.4...0.6 Nm
Weight 2g
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 14.73 0.500 0.580
B 14.23 16.51 0.560 0.650
C 9.66 10.66 0.380 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.420
F 2.54 3.42 0.100 0.135
G 1.15 1.77 0.045 0.070
H - 6.35 - 0.250
J 0.64 0.89 0.025 0.035
K 4.83 5.33 0.190 0.210
L 3.56 4.82 0.140 0.190
M 0.38 0.56 0.015 0.022
N 2.04 2.49 0.080 0.115
Q 0.64 1.39 0.025 0.055
TO-220 Outline
TO-263 AA Outline
DSI 30
033
Rectifier Diode
A
C
Data according to IEC 60747 and refer to a single diode
IXYS reserves the right to change limits, test conditions and dimensions
Features
●
International standard packages
JEDEC TO-263 AA surface mountable
●
Planar passivated chips
●
Epoxy meets UL 94V-0 flammability
classification
A
A
TO-263 AA
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
TO-220 AC
C
A
C (TAB)
Page 2
© 2000 IXYS All rights reserved
2 - 2
0.001 0.01 0.1 1
0
50
100
150
200
250
23456789110
10
2
10
3
0.00.40.81.21.6
0
10
20
30
40
50
0 102030
0
20
40
60
0 20 40 60 80 100 120 140
0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I2t
I
FSM
I
F
A
V
F
t
s
t
ms
P
tot
W
I
d(AV)M
A
T
amb
t
s
K/W
A
2
s
0 20 40 60 80 100 120 140
0
5
10
15
20
25
30
35
I
F(AV)M
T
C
A
V
A
°C °C
DSI30
T
VJ
= 45°C
50Hz, 80% V
RRM
VR = 0 V
Fig. 1 Forward current versus voltage
drop per diode
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
R
thHA
:
1 K/W
2 K/W
3 K/W
5 K/W
7 K/W
10 K/W
15 K/W
T
VJ
= 150°C
TVJ=150°C
TVJ= 25°C
T
VJ
= 150°C
Z
thJC
T
VJ
= 45°C
Constants for Z
thJC
calculation:
iR
thi
(K/W) ti (s)
1 0.01362 0.0001
2 0.1962 0.00316
3 0.267 0.023
4 0.3052 0.4
5 0.218 0.15
DSI 30
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