Datasheet DSF8045SK43, DSF8045SK42, DSF8045SK41, DSF8045SK40, DSF8045SK45 Datasheet (DYNEX)

DSF8045SK

DSF8045SK

Fast Recovery Diode

Advance Information

Replaces March 1998 version, DS4150-5.6 DS4146-6.0 January 2000

APPLICATIONS

■ Snubber Diode For GTO Applications

FEATURES

■ Double side cooling

■ High surge capability

■ Low recovery charge

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DSF8045SK45
DSF8045SK44
DSF8045SK43
DSF8045SK42
DSF8045SK41
DSF8045SK40

4500
4400
4300
4200
4100
4000

Lower voltage grades available.

V

Conditions

= V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

Outline type code: K.

See Package Details for further information.

4500V

430A

3500A
440µC

3.07µs

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 680 A

T

case

T

= 65oC 600 A

case

Half wave resistive load, T

T

= 65oC 445 A

case

T

= 65oC 380 A

case

= 65oC 430 A

case

= 65oC 285 A

case

UnitsMax.

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DSF8045SK

SURGE RATINGS

ParameterSymbol

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; with 0% V

10ms half sine; with 50% V

Conditions Max. Units

Double side cooled

Single side cooled

Clamping force 8.0kN
with mounting compound

= 150oC

RRM, Tj

= 150oC

RRM, Tj

Min.

dc

- 0.048

Cathode dc - 0.103
Double side

Single side

-

- 0.02oC/W

Max. Units

3.5 kA

61.25 x 10

3

2.8 kA

39.2 x 10

3

0.01

A2sI2t for fusingI2t

A2sI2t for fusingI2t

o

C/W

o

C/W- 0.09Anode dc

o

C/W

o

C/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range

Forward (conducting) - 150

-55 175

9.07.0Clamping force-

o

o

kN

C
C

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CHARACTERISTICS

DSF8045SK

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

K

V

TO

r

T

V

FRM

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

Soft factor

Threshold voltage

Slope resistance

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 300 V

DEFINITION OF K FACTOR AND Q

Parameter

Q

= 0.5x IRR(t1 + t2)

RA1

RA1

Conditions Max.

At 1000A peak, T
At V

, T

RRM

case

= 25oC - 4.0 V

case

= 150oC-mA

50

- 3.07

= 1000A, diRR/dt = 100A/µs

I

F

T

= 150oC, VR = 100V

case

- 440 µC

- 240 A

---

At T

= 150oC - 1.7 V

vj

At Tvj = 150oC - 2.1 mΩ

µs

dIR/dt

0.5x I

k = t

t

t

1

2

RR

I

RR

1/t2

τ

3/9

DSF8045SK

CURVES

2500

Measured under pulse conditions

2000

- (A)

F

Tj = 25˚C

1500

Tj = 150˚C

1000

Instantaneous forward current I

500

2.0 3.0 4.0 5.0 6.0
Instantaneous forward voltage V

- (V)

F

Fig.1 Maximum (limit) forward characteristics

500

Measured under pulse conditions

400

- (A)

F

Tj = 150˚C

300

200

Tj = 25˚C

Instantaneous forward current I

100

0

1.5 2.0 2.5 3.0 3.5
Instantaneous forward voltage V

- (V)

F

Fig.2 Maximum (limit) forward characteristics

4/9

600

V

FR

500

δy

δx

400

- (V)

FP

300

Tj = 125˚C limit

200

Transient forward votage V

DSF8045SK

Current
waveform

Voltage
waveform

di = δy
dt δx

Tj = 25˚C limit

100

0

0 500 1000 1500 2000

Rate of rise of forward current dI

/dt - (A/µs)

F

Fig.3 Transient forward voltage vs rate of rise of forward current

5/9

DSF8045SK

10000

I

F

- (µC)

S

tp = 1ms

dIR/dt

1000

Reverse recovered charge Q

100

1 10 100 1000

Rate of rise of reverse current dI

Fig. 4 Typical recovered charge

1000

Conditions:

= 150˚C,

T

j

= 100V

V

- (A)

RR

R

QS =

50µs

∫

0

Q

S

I

RR

/dt - (A/µs)

R

Conditions:

= 150˚C,

T

j

= 100V

V

R

IF = 2000A

= 1000A

I

F

IF = 2000A

= 1000A

I

F

100

Reverse recovery current I

10

1 10 100 1000

Rate of rise of reverse current dI

/dt - (A/µs)

R

Fig. 5 Typical reverse recovery current vs rate of rise of reverse current

6/9

DSF8045SK

0.1

0.01

Thermal impedance - (˚C/W)

0.001

Fig.6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)

Time - (s)

Single side cooled

Double side cooled

10.10.010.001

10

7/9

DSF8045SK

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 Holes Ø3.6 x 2.0 deep (One in each electrode)

Cathode

Ø42 max
Ø25 nom

25.4

27.0

Ø25 nom

Nominal weight: 160g

Clamping force: 8kN ±10%

Package outine type code: K

Anode

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Recommendations for clamping power semiconductors AN4839
Thyristor and diode measurement with a multi-meter AN4853
Use of V

, rT on-state characteristic AN5001

TO

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DSF8045SK

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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© Dynex Semiconductor 2000 Publication No. DS4150-6 Issue No. 6.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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