Datasheet DSF8025SE21, DSF8025SE20, DSF8025SE25, DSF8025SE24, DSF8025SE23 Datasheet (DYNEX)

DSF8025SE

DSF8025SE

Fast Recovery Diode

Advance Information

Replaces March 1998 version, DS4146-4.4 DS4146-5.0 January 2000

APPLICATIONS

■ Induction Heating

■ A.C. Motor Drives

■ Inverters And Choppers

■ Welding

■ High Frequency Rectification

■ UPS

FEATURES

■ Double side cooling

■ High surge capability

■ Low recovery charge

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DSF8025SE25
DSF8025SE24
DSF8025SE23
DSF8025SE22
DSF8025SE21
DSF8025SE20

2500
2400
2300
2200
2100
2000

Lower voltage grades available.

CURRENT RATINGS

Conditions

= V

V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

Outline type code: E

See Package Details for further information.

2500V

650A

7500A
540µC

5.0µs

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

Mean forward current

RMS value

F

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 1020 A

T

case

T

= 65oC 785 A

case

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

T

= 65oC 604 A

case

T

= 65oC 465 A

case

= 65oC 650 A

case

= 65oC 385 A

case

UnitsMax.

1/8

DSF8025SE

SURGE RATINGS

ParameterSymbol

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

THERMAL AND MECHANICAL DATA

Symbol Parameter

R

R

th(j-c)

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Conditions

10ms half sine; with 0% V

10ms half sine; with 50% V

Conditions Max. Units

Double side cooled

Single side cooled

Clamping force 8.0kN
with mounting compound

= 150oC

RRM, Tj

RRM, Tj

dc

Cathode dc
Double side

Single side

= 150oC

Max. Units

7.5 kA

281 x 10

3

6.0 kA

180 x 10

3

Min.

- 0.047

- 0.094oC/W

0.018

-

- 0.036

A2sI2t for fusingI2t

A2sI2t for fusingI2t

o

C/W

o

C/W- 0.094Anode dc

o

C/W

o

C/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range -55 175

On-state (conducting) - 150

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

K Soft factor

V

TO

Threshold voltage

Parameter

Conditions Max.

At 1000A peak, T
At V

, T

RRM

= 150oC-mA

case

= 25oC - 2.3 V

case

50

- 5.0

= 1000A, diRR/dt = 100A/µs

I

F

T

= 150oC, VR = 100V

case

- 540 µC

- 235 A

1.8 - -

At Tvj = 150oC - 1.48 V

o

o

kN9.07.0Clamping force-

µs

C
C

2/8

r

T

V

FRM

Slope resistance

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC70-V

At T

= 150oC - 0.8 mΩ

vj

DSF8025SE

DEFINITION OF K FACTOR AND Q

Q

= 0.5x IRR(t1 + t2)

RA1

dIR/dt

0.5x I

t

1

RR

I

RR

k = t

t

2

1/t2

CURVES

4000

3500

Measured under pulse conditions

RA1

τ

3000

- (A)

2500

F

2000

1500

Instantaneous forward current I

Tj = 150˚C

Tj = 25˚C

1000

500

0 1.0 2.0 3.0 4.0

Instantaneous forward voltage V

- (V)

F

Fig. 1 Maximum (limit) forward characteristics

3/8

DSF8025SE

500

400

- (A)

F

300

Measured under pulse conditions

Tj = 150˚C

Tj = 25˚C

200

Instantaneous forward current I

100

0

1.00 1.25 1.50 1.75 2.00
Instantaneous forward voltage V

- (V)

F

Fig. 2 Maximum (limit) forward characteristics

250

Current
waveform

V

200

- (V)

FP

150

FR

δx

δy

di = δy
dt δx

Voltage
waveform

4/8

Tj = 125˚C limit

100

Transient forward votage V

Tj = 25˚C limit

50

0

0 500 1000 1500 2000

Rate of rise of forward current dI

/dt - (A/µs)

F

Fig. 3 Transient forward voltage vs rate of rise of forward current

DSF8025SE

100000

I

F

QS =

50µs

∫

0

Q

S

tp = 1ms

- (µC)

10000

S

1000

Reverse recovered charge Q

dIR/dt

I

RR

IF = 2000A
I

= 1000A

F

IF = 200A

100

10 100 1000 10000

Rate of rise of reverse current dI

/dt - (A/µs)

R

Conditions:

= 150˚C,

T

j

= 100V

V

R

Fig. 4 Recovered charge

10000

Conditions:

= 150˚C,

T

j

= 100V

V

R

- (A)

1000

RR

A
B

C

100

Reverse recovery current I

A: IF = 2000A
B: I

= 1000A

F

C: I

= 200A

10

F

1 10 100 1000

Rate of rise of reverse current dI

/dt - (A/µs)

R

Fig. 5 Typical reverse recovery current vs rate of fall of forward current

5/8

DSF8025SE

0.1

0.01

Thermal Impedance - Junction to case (˚C/W)

0.001

0.001 0.01 0.1 1.0 10

Fig. 6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)

Anode side cooled

Double side cooled

Time - (s)

6/8

DSF8025SE

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)

Cathode

Ø42max

Ø25nom.

14

Ø25nom.

Nominal weight: 82g

Clamping force: 8kN ±10%

Package outine type code: E

Anode

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Recommendations for clamping power semiconductors AN4839
Thyristor and diode measurement with a multi-meter AN4853
Use of V

, rT on-state characteristic AN5001

TO

15

7/8

DSF8025SE

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
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8/8

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© Dynex Semiconductor 2000 Publication No. DS4146-5 Issue No. 5.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM